STMicroelectronics IRF630MFP N-channel 200v - 0.35î© - 9a - to-220 /to-220fp mesh overlayâ ¢ power mosfet Datasheet

IRF630M
IRF630MFP
N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP
Mesh Overlay™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
IRF630M
200 V
< 0.40 Ω
9A
IRF630MFP
200 V
< 0.40 Ω
9A
■
Extremely high dv/dt capability
■
Very low intrinsic capacitances
■
Gate charge minimized
3
3
1
TO-220
2
1
2
TO-220FP
Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources. Isolated TO220 option simplifies assembly and cuts risk of
accidental short circuit in crowded monitor PCB’s.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
IRF630M
IRF630M
TO-220
Tube
IRF630MFP
IRF630MFP
TO-220FP
Tube
June 2006
Rev 2
1/14
www.st.com
14
Contents
IRF630M - IRF630MFP
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 9
IRF630M - IRF630MFP
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum rating
Symbol
Parameter
Value
IRF630M
VDS
VDGR
VGS
ID
Unit
IRF630MFP
Drain-source Voltage (VGS = 0)
200
V
Drain-gate voltage (RGS = 20 kW)
200
V
Gate- source voltage
± 20
Drain current (continuos) at TC = 25°C
V
9
9
(1)
A
Drain current (continuos) at TC = 100°C
5.7
Drain current (pulsed)
36
36
A
Total dissipation at TC = 25°C
75
30
W
Derating factor
0.6
0.24
W/°C
Peak diode recovery voltage slope
5
5
V/ns
VISO
Insulation winthstand voltage (DC)
--
2500
V
Tstg
Storage temperature
ID
IDM
(2)
PTOT
dv/dt
(3)
Tj
5.7
(1)
A
–65 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt £300A/µs, VDD £ V(BR)DSS, Tj ≤TJMAX.
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case max
TO-220
TO-220FP
1.67
4.17
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Symbol
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
5
A
350
mJ
3/14
Electrical characteristics
2
IRF630M - IRF630MFP
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 4.5A
Table 5.
Symbol
Test conditions
Typ.
Max.
200
Unit
V
1
50
µA
µA
±100
nA
3
4
V
0.35
0.40
Ω
Min.
Typ.
Max.
Unit
3
4
2
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS > ID(on) x RDS(on)max,
ID = 4.5A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
540
90
35
700
pF
pF
pF
tr(Voff)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD = 100V, ID = 4.5A
RG = 4.7Ω VGS = 10V
10
15
12
12
14
20
17
17
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160V, ID = 9A,
VGS = 10V
31
7.5
9
45
nC
nC
nC
td(on
tr
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
4/14
Min.
S
IRF630M - IRF630MFP
Table 6.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
Electrical characteristics
Sourse drain diode
Parameter
Test conditions
Min.
Typ.
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 9A, VGS = 0
Reverse recovery time
I = 9A, di/dt = 100A/µs
Reverse recovery charge SD
VDD = 50V, Tj = 150°C
Reverse recovery current
170
0.95
11
Max.
Unit
9
36
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/14
Electrical characteristics
IRF630M - IRF630MFP
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220
Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
6/14
IRF630M - IRF630MFP
Electrical characteristics
Figure 7.
Transconductance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 8.
Static drain-source on resistance
Figure 12. Normalized on resistance vs
temperature
7/14
Electrical characteristics
Figure 13. Source-drain diode forward
characteristics
8/14
IRF630M - IRF630MFP
IRF630M - IRF630MFP
3
Test circuit
Test circuit
Figure 14. Unclamped Inductive load test
circuit
Figure 15. Unclamped inductive waveform
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
9/14
Package mechanical data
4
IRF630M - IRF630MFP
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
IRF630M - IRF630MFP
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/14
Package mechanical data
IRF630M - IRF630MFP
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
inch
TYP
4.4
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
28.6
30.6
1.126
1.204
L4
9.8
L5
2.9
10.6
.0385
0.417
3.6
0.114
L6
0.141
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
0.630
L3
L6
F2
H
G
G1
F
F1
L7
L2
12/14
L5
1 2 3
L4
IRF630M - IRF630MFP
5
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
21-Jun-2004
1
Preliminary version
28-Jun-2006
2
New template, no content change
13/14
IRF630M - IRF630MFP
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