MOTOROLA MW4IC915MBR1

Freescale Semiconductor, Inc.
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by MW4IC915/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Freescale Semiconductor, Inc...
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Motorola’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage
structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N-CDMA and W-CDMA.
• Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 =
240 mA, 869-894 MHz and 921-960 MHz
Output Power — 3 Watts Avg.
Power Gain — 31 dB
Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = -65 dBc
Spectral Regrowth @ 600 kHz Offset = -83 dBc
EVM — 1.5%
• Typical Performance: 860-960 MHz, 26 Volts
Output Power — 15 Watts CW
Power Gain — 30 dB
Efficiency — 44%
• On Chip Matching (50 Ohm Input, >3 Ohm Output)
• Integrated Temperature Compensation Capability with Enable/Disable
Function
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz,
Pout = 15 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA
• Can Be Bolted or Soldered through a Hole in the Circuit Board for
Maximum Thermal Performance
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
!"#!
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GSM/GSM EDGE,
N-CDMA, W-CDMA
860 - 960 MHz, 15 W, 26 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW4IC915MBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW4IC915GMBR1
PIN CONNECTIONS
Functional Block Diagram
(Top View)
REV 2
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
MW4IC915MBR1 MW4IC915GMBR1
1
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MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5. +15
Vdc
Storage Temperature Range
Tstg
-65 to +175
°C
Operating Junction Temperature
TJ
175
°C
Symbol
Max
THERMAL CHARACTERISTICS
Characteristic
Freescale Semiconductor, Inc...
Thermal Resistance, Junction to Case
Unit
RθJC
°C/W
GSM Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
1.48
GSM EDGE Application
(Pout = 7.5 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
1.59
CDMA Application
(Pout = 3.75 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
1.63
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22-A113
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
TWO-TONE FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
Gps
29
31
—
dB
Drain Efficiency
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
η
29
31
—
%
Third Order Intermodulation Distortion
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
IMD3
—
-40
-29
dBc
Input Return Loss
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
IRL
—
-15
-10
dB
(continued)
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
PERFORMANCE TESTS (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA
Quiescent Current Accuracy over Temperature (-10 to 85°C)
at Nominal Value
∆IQT
—
±5
—
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW
(Characterize from 869-894 MHz and 920-960 MHz)
GF
—
0.2
—
dB
Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW
(Characterize from 869-894 MHz and 920-960 MHz)
Φ
—
±0.6
—
°
Delay
—
2.5
—
ns
Φ∆
—
±15
—
°
Delay @ Pout = 3 W CW
Insertion Phase Window @ Pout = 3 W CW
TYPICAL PERFORMANCE GSM/GSM EDGE (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA,
869-894 MHz and 921-960 MHz
Freescale Semiconductor, Inc...
Output Power at 1dB Compression Point
P1dB
—
20
—
Watts
Gps
—
30
—
dB
Drain Efficiency
(Pout = 15 W CW)
η
—
44
—
%
Input Return Loss
(Pout = 15 W CW)
IRL
—
-15
—
dB
Error Vector Magnitude
(Pout = 3 W Avg. including 0.6% rms source EVM)
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
(Pout = 3 W Avg.)
SR1
—
-65
—
dBc
Spectral Regrowth at 600 kHz Offset
(Pout = 3 W Avg.)
SR2
—
-83
—
dBc
Common-Source Amplifier Power Gain
(Pout = 15 W CW)
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
3
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0.086″, 50 W Microstrip
0.133″ x 0.236″ Microstrip
0.435″ x 0.283″ Microstrip
0.171″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
Z6
Z7
Z8
Z9
PCB
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Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
0.157″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.394″ x 0.088″ Microstrip
0.181″ x 0.088″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 1. Two-Tone 860-960 MHz Test Fixture Schematic
Table 1. Two-Tone 860-960 MHz Test Fixture Component Designations and Values
Designators
Description
C1, C6, C9, C14
22 mF, 35 V Tantalum Chip Capacitors, AVX #TAJE226M035R
C2, C5, C8, C11
1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X
C3, C4, C7, C10, C16
22 pF Chip Capacitors, B Case, ATC #100B220JCA500X
C12, C13
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X
C15
10 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
R1, R2
10 kΩ, 1/4 W Chip Resistor (1206)
L1
12.5 nH Inductor
M1, M2, M3, M4
0.283″, 90_ Mitered Microstrip Bends
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
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MW4IC915MB
Rev 0
&
Freescale Semiconductor, Inc...
Figure 2. Two-Tone 860-960 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
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2
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3
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Freescale Semiconductor, Inc...
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Z1
Z2
Z3
Z4
0.681″
0.157″
0.468″
0.220″
x 0.039″, 50 W Microstrip
x 0.228″ Microstrip
x 0.157″ Microstrip
x 0.157″ Microstrip
Z5
Z6
Z7
PCB
0.566″ x 0.043″ Microstrip
0.165″ x 0.043″ Microstrip
0.078″ x 0.043″ Microstrip
Taconic RF35, 0.02″, εr = 3.5
Figure 3. 860-960 MHz Reference Board Schematic
Table 2. 860-960 MHz Reference Board Component Designations and Values
Designators
Description
C1, C15
10 pF Chip Capacitors (0805), ACCU-P AVX #08051J100GBT
C2
5.6 pF Chip Capacitor (0805), ACCU-P AVX #08051J5R6BBT
C3, C4, C9, C11, C13
33 pF Chip Capacitors (0805), ACCU-P AVX #08051J330GB
C5, C10, C12, C14
10 nF Chip Capacitors (0805), AVX #08055C103KAT
C6, C7, C8
22 mF, 35 V Tantalum Capacitors, AVX #TAJE226M035R
C16, C17
100 nF Chip Capacitors (0805), AVX #08055C104KAT
P1, P2
5 kΩ Potentiometer CMS Cermet Multi-turn, Bourns #3224W
R1, R2, R3, R4, R5
0 Ω, 1/8 W Chip Resistors (0805)
R6, R7
10 kΩ, 1/4 W Chip Resistors (1206)
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc...
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MW4IC915MB
Rev 0
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Figure 4. 860-960 MHz Reference Board Component Layout
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
7
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Figure 6. Two-Tone Wideband Circuit Performance
Figure 7. Intermodulation Distortion Products
versus Output Power
TYPICAL CHARACTERISTICS (MOTOROLA REFERENCE BOARD)
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Figure 8. Power Gain and Efficiency versus
Output Power
Figure 9. Power Gain versus Frequency
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS (MOTOROLA REFERENCE BOARD) - CONTINUED
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Figure 11. Power Added Efficiency versus
Frequency
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Figure 12. Error Vector Magnitude versus
Output Power
Figure 13. Spectral Regrowth at 400 kHz
versus Output Power
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Figure 14. Spectral Regrowth at 600 kHz
versus Output Power
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
9
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Figure 15. Series Equivalent Output Impedance
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
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NOTES
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
11
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NOTES
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
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NOTES
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
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PACKAGE DIMENSIONS
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Freescale Semiconductor, Inc...
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CASE 1329-09
ISSUE J
TO-272 WB-16
PLASTIC
MW4IC915MBR1
DIM
A
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MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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CASE 1329A-03
ISSUE B
TO-272 WB-16 GULL
PLASTIC
MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
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“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2003
HOW TO REACH US:
USA /EUROPE /LOCATIONS NOT LISTED:
Motorola Literature Distribution
P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center,
3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MW4IC915MBR1 MW4IC915GMBR1◊
MOTOROLA RF DEVICEMW4IC915/D
DATA
For More Information On This Product,
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