Renesas M54687FP Bi-directional motor driver with governor Datasheet

M54687FP
Bi-Directional Motor Driver with Governor
REJ03F0048-0100Z
Rev.1.0
Sep.19.2003
Description
The M54687FP is a semiconductor integrated circuit that is capable of directly controlling the rotating direction and
rotating speed of a smallsize bi-directional motor rotating in both forward and reverse directions.
Features
•
•
•
•
•
Capable of controlling the speed in forward and reverse rotating directions
Capable of controlling the speed in high speed mode
Large output current drive (IO(max) =700mA)
Built-in clamp diode
Flat package (16P2N)
Application
Micro-cassette for phone-answering machine, AV equipment, and other general consumption appliances
Function
The M54687FP is an IC that can control the forward rotation, reverse rotation and speed of small DC brush motor.
For the basic operation of this IC, output modes are selected, as shown in the logic truth table, by entering appropriate
H/L level into the R, L and S inputs.
Two resistances are put between the output pin and the PSC pin and the resistance ratios are appropriately adjusted to
perform the speed control.
In addition to the above, speed control can be done by varying the voltage at VR pin, in the high speed mode.
Pin Configuration
PSC1
1
16
P-VCC Power supply
R input
R
2
15
O1
Output 1
S input
S
3
14
VR
High speed
control
GND
4
5
L
6
Power supply L-VCC
Speed control 2 PSC2
L input
M54687FP
Speed control 1
13
GND
12
11
NC
7
10
O2
8
9
P-VCC Power supply
Output 2
Outline 16P2N-A
NC: no connection
Rev.1.0, Sep.19.2003, page 1 of 8
M54687FP
Logic Truth Table
Input
Output
R
L
S
O1
O2
Mode
H
H
H
H
FG
FF
Forward rotation high speed governor
H
L
L
H
H
H
H
FG
G
H
PLAY
REW
Forward rotation governor
Reverse rotation high speed governor
L
H
L
H
H
L
G
L
H
L
REV
BRAKE
Reverse rotation governor
Brake operation
L
H
L
L
L
L
OFF

OFF

STB

Standby mode output high imp.
Reserved
L
H
L


G: Governor control output mode
FG: Rotating speed controllable with the voltage at VR pin (However, the precision is worse than G.)
Block Diagram
Output 1
O1
15
Speed control 1
PSC1
1
Output 2
O2
10
Speed control 2 Power supply
PSC2
VCC
8
Activation circuit
(–)
Control circuit
2
R
R input
Rev.1.0, Sep.19.2003, page 2 of 8
6
L
L input
Reference
voltage
(–)
Constant voltage,
Constant current
Reference
voltage
High Speed
control
VR 14
3
S
S input
4 5 12 13
GND
7 9 16
M54687FP
Absolute Maximum Ratings
(Ta = 25°C unless otherwise noted.)
Parameter
Symbol
Ratings
Unit
Power supply
VCC
–0.5 – +14
V
Condition
Input voltage
Output voltage
VI
VO
–0.5 – VCC
–0.5 – VCC+2
V
V
Allowable motor rush current
Continuous output current
IOP
IO
±700
±200
mA
mA
tON ≤ 100ms, duty of 1% or less.
However, Pd must not exceed the maximum rating.
Power dissipation
Operating temperature
Pd
Topr
1.14
-20 – 75
W
°C
When mounted in board
Storage temperature
Tstg
-40 – 125
°C
Thermal Derating (Absolute Maximum Rating)
Power Dissipation Pd (W)
2.0
1.5
When mounted in board
1.0
0.5
0
0
25
50
75
100
Operating Temperature Ta (˚C)
Recommended Operational Conditions
(Ta = 25°C unless otherwise noted.)
Limits
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
“H” input voltage
Vcc
VIH
6.0
2.0
9.0
13.0
Vcc
V
V
“L” input voltage
VR control voltage range*
VIL
VR
0
0
0.4
Vcc
V
V
* : IO ≤ 200mA when FF/REW speed is controlled.
Rev.1.0, Sep.19.2003, page 3 of 8
M54687FP
Electrical characteristics
(Ta = 25°C, unless otherwise noted.)
Symbol
Parameter
Test conditions
IO(leak)
Output leak current
VCC = 14V, VO = 14V
Standby mode
II
VOH
Input current
“H” output voltage
VOL
“L” output voltage
VI = 5.0V
IO = -200mA, VR = 5.0V
IO = 200mA, VR = 0V, Vpsc = 2.5V
FF / REW / BRAKE mode
Vref
/ IO
Vref
K
/ IO
K
Vref
/ Ta
Vref
K
/ Ta
K
Vref II
Vref
/ VCC
Vref
Vref
/ IO
Vref
Vref
/ Ta
Vref
IB
IR
FF/REW
PLAY/REV
BRAKE
STAND BY
Reference voltage
Bias current
Current proportional constant
Voltage
characteristics
Current
characteristics
Temperature
characteristics
Reference voltage
K
/ VCC
K
Governor characteristics (I)
PLAY•REV mode
Vref
/ VCC
Vref
Supply
current
Governor characteristics
(II) FF•REW
ICC1
ICC2
ICC3
ICC4
Vref
IB
K
Output open
Output open
Output open
IO = 40mA
Min.
Limits
Typ.
Max.
0
100
µA
1.0
–
mA
V
0
0.4
VCC-1.2 VCC-0.9
Unit
–
0.22
0.5
V
–
–
–
–
0.95
0.7
18
5.0
5.0
35
0
1.0
1.2
20
8.0
8.0
48
10.0
1.05
1.7
22
mA
mA
mA
µA
V
mA
–
Vref
VCC = 6.0 – 13V
0.1
%/V
K
VCC = 6.0 – 13V
IO = 40mA
0.2
%/V
Vref
IO = 50 – 200mA
0.02
%/mA
K
IO = 50 – 200mA
0.01
%/mA
Vref
Ta = -20 – 75˚C
0.01
%/˚C
K
Ta = -20 – 75˚C
0.01
%/˚C
VR = 0.3V
2.0
V
Voltage
characteristics
VR = 0.3V
VCC = 6.0 – 13V
3.0
%/V
Current
characteristics
VR = 0.3V
IO = 50 – 200mA
0.2
%/mA
Temperature
characteristics
VR = 0.3V
Ta = -20 – 75˚C
0.1
%/˚C
Bias current
VR input current
Rev.1.0, Sep.19.2003, page 4 of 8
VR = 0.3V
VR = 0V
0.7
0
1.3
-5.0
1.8
-20
mA
µA
M54687FP
Application Example
When the normal speed is set to 2000rpm, and the high speed is set to 3500rpm
2k
RS
∗
VCC = 9.0V
0.1µF
RT 300
RT
∗
VCC = 5.0V
∗
/ / 5.6 k
∗
10µF
M
PSC1
20k
O2
O1
PSC2
VCC
∗
VR
∗
Control circuit
R
P-G
L
Control signal
S
L-G
∗ Install at a position close to the IC, if possible.
, Generation constant Ka = 2.57
3000
is used for temperature compensation to take measures against hunting at low temperature.
Motor: Armature resistance R a = 14
RT: The resistance of 300
(–)
Reference
voltage
Activation circuit
(–)
Constant voltage,
Constant current
Reference
voltage
1k
Rev.1.0, Sep.19.2003, page 5 of 8
M54687FP
Speed Control Method
(1) Speed Control Method I (See the application circuit drawing.)
For PLAY/REV
Rotation number can be expressed by the following formula:
N= 1 {IB • RT+Vref (1+ RT )+la( RT -Ra)} • • • • • • (1)
Ka
RT+RS
K
Where:
Motor generation constant: Ka, Motor armature resistance: Ra, Rotation number: N
K: Current proportional constant, IB: PSC pin bias current,
Ia:motor current
RT, RS: External resistance
In addition, to set the rotation number with RS, external resistance RT is generally set as follows:
RT ≤ K × Ra
For FF/REW
Note that the rotation number is basically controlled with the same expression as formula (1) but different reference
voltage
Vref and different bias current IB are to be used.
However, Vref 5VR+0.5
(2) Speed Control Method II (to increase the motor rotation number)
RS
RT
RT
M
PSC1
O1
R
L
O2
S
PSC2
VR
VCC
L-G
P-G
Control signal
In the external circuit above, the voltage across motors is almost determined by the ratio of ‘RS+RT’ to ‘RT’ and,
therefore, a value set for the voltage across motors is not so large.
As method (1) of speed control I, the rotation number can be controlled.
However, the following relations must be satisfied:
RT→RT+RS
RS+RT→RT
Rev.1.0, Sep.19.2003, page 6 of 8
M54687FP
(3) Speed Control Method III (to increase the precision of forward rotation and reverse rotation)
RS1
RT1
RT2
RS2
M
PSC1
O1
R
L
O2
S
PSC2
VR
VCC
L-G
P-G
Control signal
The above two applications cannot make fine adjustments in forward rotation and reverse rotation (because the external
resistance is shared with the forward rotation and reverse rotation).
Fine adjustments can be made for each of forward rotation and reverse rotation if the external circuit is set as shown in
the drawing above.
This external circuit is also available to change the speed of forward and reverse rotation.
The control method adopts the same formula as formula (1).
However, the following relations must be satisfied:
RT+RS→RS1 or RS2
RT→RT1 or RT2
CAUTIONS
(1) Oscillation may take place with the setting of RT>K•Ra. Set
R ≤ K•Ra.
(2) Add a capacitor of 0.1µF to the portion between PSCs to reduce brush noise of the motor.
(3) Add a capacitor of 10µF to the portion between VCC and GND to reduce brush noise and back electromotive noise of
the motor.
(4) At a low temperature, RT>K•Ra is set due to temperature characteristics of resistance Ra of the motor. When
oscillation takes place, use resistance with a temperature coefficient for RT.
(5) When the supply voltage is low, note that saturation of the output transistor of the IC may prevent the rotating speed
for control. Taking into account motor noise etc., set constants in the following range.
2.0V
VCC - (EC+Ia • Ra)
RT
= VCC - {RT • IB + Vref(1+ RT )+
K
RS
•
Ia}
When the back electromotive force is large with the brakes applied, for example, malfunction may occur in internal
parasitic Di. If flyback current of 1A or more flows, add Schottky Di to the portion between the output and the GND.
When the IC is used at a high speed for PWM etc., note that switching of output results in delay of approx. 10µs.
Rev.1.0, Sep.19.2003, page 7 of 8
HE
Rev.1.0, Sep.19.2003, page 8 of 8
G
Z1
E
1
16
EIAJ Package Code
SOP16-P-300-1.27
z
Detail G
e
D
JEDEC Code
—
y
b
8
9
x
Weight(g)
0.2
M
F
A
Detail F
A2
Lead Material
Cu Alloy
L1
MMP
c
A1
A
A1
A2
b
c
D
E
e
HE
L
L1
z
Z1
x
y
Symbol
e1
b2
e1
I2
b2
Dimension in Millimeters
Min
Nom
Max
2.1
0
0.1
0.2
—
1.8
—
0.35
0.4
0.5
0.18
0.2
0.25
10.0
10.1
10.2
5.2
5.3
5.4
—
1.27
—
7.5
7.8
8.1
0.4
0.6
0.8
—
1.25
—
—
0.605
—
—
0.755
—
0.25
—
—
—
—
0.1
0˚
—
8˚
—
0.76
—
—
7.62
—
—
1.27
—
Recommended Mount Pad
e
Plastic 16pin 300mil SOP
I2
16P2N-A
M54687FP
Package Dimensions
L
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2003. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 1.0
Similar pages