MOTOROLA PBF493S

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by PBF493/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–300
Vdc
Collector – Base Voltage
VCBO
–300
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage (1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–300
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–300
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
ICBO
—
–0.25
µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc)
IEBO
—
–20
nAdc
Collector Cutoff Current
(VCE = –10 Vdc)
ICEO
—
–250
nAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
40
40
25
—
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
hFE
PBF493S
All Types
All Types
—
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VCE(sat)
—
–0.5
Vdc
Base – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VBE(sat)
—
–0.9
Vdc
fT
50
—
MHz
Cobo
—
6.0
pF
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150
TJ = +125°C
VCE = –10 Vdc
hFE, DC CURRENT GAIN
100
+25°C
70
–55°C
50
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80
–100
IC, COLLECTOR CURRENT (mA)
100
50
C, CAPACITANCE (pF)
Cib
20
10
5.0
2.0
Ccb
1.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000
VR, REVERSE VOLTAGE (VOLTS)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
100
TJ = 25°C
VCE = –20 Vdc
80
60
40
30
20
0
–1.0
Figure 2. Capacitances
–2.0
–5.0
–10
–20
IC, COLLECTOR CURRENT (mA)
–50
–100
Figure 3. Current–Gain — Bandwidth Product
–1.0
–500
100 µs
IC, COLLECTOR CURRENT (mA)
1.0 ms
V, VOLTAGE (VOLTS)
–0.8
VBE @ VCE = –10 V
–0.6
–0.4
–0.2
0
–1.0
VCE(sat) @ IC/IB = 10 mA
–2.0
–5.0
–10
–20
IC, COLLECTOR CURRENT (mA)
–50
–100
Figure 4. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0 s
–200
–100
PBF493S
–50
–20
1.5 WATT THERMAL
LIMITATION @ TC = 25°C
625 mW THERMAL
LIMITATION @ TA = 25°C
–10
–5.0
–3.0
PBF493
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 150°C
–100
–200 –300
–5.0
–10
–20 –30
–50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region — Safe Operating Area
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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4
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*PBF493/D*
PBF493/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data