Analogic AAT9055 30v n-channel power mosfet Datasheet

AAT9055
30V N-Channel Power MOSFET
General Description
Features
The AAT9055 30 V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demonstrates high power handling and small size.
•
•
•
•
Applications
VDS(MAX) = 30V
ID(MAX)1 = 12 A @ TC = 25°C
IAPP(MAX) = 6A in typical computer application
Low RDS(ON):
• 56 mΩ @VGS = 10V
• 90 mΩ @VGS = 4.5V
DPAK Package
DC-DC converters
High current load switches
LDO output
Drain-Connected Tab
G
Absolute Maximum Ratings
Symbol
VDS
VGS
Description
Value
Drain-Source Voltage
Gate-Source Voltage
TC = 25°C
TC = 70°C
Continuous Drain Current @ TJ=150°C
IDM
IS
Pulsed Drain Current 3
Continuous Source Current (Source-Drain Diode) 1
TC = 25°C
Maximum Power Dissipation 1
TC = 70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
S
(TC=25°C unless otherwise noted)
ID
PD
Preliminary Information
•
•
•
PWMSwitch™
1
Units
30
±20
±12
±10
±16
12
22
14
-55 to 150
°C
Value
Units
100
28
5.5
°C/W
°C/W
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RTYP
RθJC
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Description
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board
Maximum Junction-to-Case
2
1
AAT9055
30V N-Channel Power MOSFET
Electrical Characteristics
Symbol
(TJ=25°C unless otherwise noted)
Description
Conditions
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Drain-Source ON-Resistance
ID(ON)
VGS(th)
IGSS
On-State Drain Current 3
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
3
Drain Source Leakage Current
gfs
Forward Transconductance 3
Dynamic Characteristics 4
QG
Total Gate Charge
QGT
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain Charge
tD(ON)
Turn-ON Delay
tR
Turn-ON Rise Time
tD(OFF)
Turn-OFF Delay
tF
Turn-OFF Fall Time
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage
IS
Continuous Diode Current 1
VGS=0V, ID=250µA
VGS=10V, ID=12A
VGS=4.5V, ID=10A
VGS=10V, VDS=5V (Pulsed)
VGS=VDS, ID=250µA
VGS=±20V, VDS=0V
VGS=0V,VDS=30V
VGS=0V,VDS=30V, TJ=70°C
VDS=5V, ID=4A
VDS=15V, RD=2.5Ω, VGS=5V
VDS=15V, RD=2.5Ω, VGS=10V
VDS=15V, RD=2.5Ω, VGS=10V
VDS=15V, RD=2.5Ω, VGS=10V
VDD=15V, RD=2.5Ω, VGS=10V,
VDD=15V, RD=2.5Ω, VGS=10V,
VDD=15V, RD=2.5Ω, VGS=10V,
VDD=15V, RD=2.5Ω, VGS=10V,
3
Min
VGS=0, IS=12A
Typ
Max
30
V
44
68
56
90
16
1.0
±100
1
25
6
RG=6Ω
RG=6Ω
RG=6Ω
RG=6Ω
Units
A
V
nA
µA
S
4.2
7.7
1.35
1.2
2.5
2.6
12
5.7
1.2
mΩ
nC
ns
1.5
12
V
A
Notes:
1. Based on thermal dissipation from junction to case. RθJC + RθCA = RθJA where the case thermal reference is defined as the solder
mounting surface of the drain tab. RθJC is guaranteed by design, however RθCA is determined by the PCB design. Package current is
limited to 8A DC and 16A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 µs.
4. Guaranteed by design. Not subject to production testing.
2
9055.2003.04.0.61
AAT9055
30V N-Channel Power MOSFET
Typical Characteristics
Transfer Characteristics
Output Characteristics
16
10V
VD =VG
4.5V
6V
12
4V
8
125°C
4
3V
0
0
0
1
25°C
8
3.5V
4
2
3
0
4
1
2
3
On-Resistance vs. Drain Current
On-Resistance vs. Gate to Source Voltage
100
80
RDS(ON) (mΩ)
80
VGS = 4.5V
60
40
VGS = 10V
I D = 10A
60
2V
40
20
20
0
0
0
4
8
12
0
16
2
4
Gate Charge
8
10
Source-Drain Diode Forward Voltage
100
VD =15V
RD =2.5Ω
10
6
TJ = 150°C
IS (A)
V GS (V)
6
VGS (V)
ID (A)
8
5
V GS (V)
100
10
4
V DS (V)
120
RDS(ON) (mΩ)
-55°C
12
ID (A)
IDS (A)
16
5V
4
TJ = 25°C
1
2
0
0
2
4
6
QG, Charge (nC)
9055.2003.04.0.61
8
10
0.1
0.4
0.6
0.8
1
1.2
1.4
V SD (V)
3
AAT9055
30V N-Channel Power MOSFET
Ordering Information
Package
Marking
Part Number (Tape and Reel)
TO-252 (DPAK)
9055
AAT9055INY-T1
Note: Sample stock is generally held on all part numbers listed in BOLD.
Package Information
TO-252 (DPAK)
1.145
0.50
2.29 BSC
7.5° ± 7.5°
2.285 ± 0.105
2.67 REF
0.83 ± 0.19
9.855 ± 0.555
5.775 ± 0.445
5.205 ± 0.255
1.46 ± 0.57
6.54 ± 0.19
0.58 ± 0.13
0.13
1.59 ± 0.19
0.72 ± 0.17
All measurements in millimeters.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
4
9055.2003.04.0.61
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