Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 General Description Features The AP2213 is a 500mA output current fixed voltage regulator which provides low noise, very low dropout voltage (typically 350mV at 500mA), very low standby current (1µA maximum) and excellent power supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets and PDAs and in noise sensitive applications, such as RF electronics. · · · Up to 500mA Output Current Low Standby Current Low Dropout Voltage: VDROP=350mV at 500mA · · High Output Accuracy: ±1% Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100µA · · · · · · Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reversed-battery Protection Logic-controlled Enable The AP2213 features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. Applications The AP2213 has 2.5V, 3.0V and 3.3V versions. · · · · The AP2213 is available in TO-252-2 (1), SOIC-8 and SOT-223 packages. TO-252-2 (1) Laptop, Notebook, and Palmtop Computer CD-ROM, CD-R/RW, DVD Driver Portable Electronic PC Peripheral SOIC-8 SOT-223 Figure 1. Package Types of AP2213 Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 1 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Pin Configuration D Package M Package (SOIC-8) (TO-252-2 (1)) 3 VOUT 2 GND 1 VIN EN 1 8 GND VIN 2 7 GND VOUT 3 6 GND BYP 4 5 GND H Package (SOT-223) 3 VIN 2 VOUT 1 GND Figure 2. Pin Configuration of AP2213 (Top View) Pin Descrition Pin Number Pin Name Function TO-252-2 (1) SOIC-8 SOT-223 3 3 2 VOUT 2 5, 6, 7, 8 1 GND Ground 1 2 3 VIN Input Voltage 1 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown 4 BYP Nov. 2009 Rev. 1. 5 Regulated output voltage Bypass capacitor for low noise operation BCD Semiconductor Manufacturing Limited 2 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Functional Block Diagram VIN 3 (3) (2) 1 (2) (3) VOUT (4) BYP + (1) Bandgap Ref. - EN Current Limit Thermal Shutdown 2 (5, 6, 7, 8) (1) A (B) (C) A for TO-252-2 (1) B for SOIC-8 C for SOT-223 GND Figure 3. Functional Block Diagram of AP2213 Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 3 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Ordering Information AP2213 E1: Lead Free G1: Green Circuit Type TR: Tape and Reel Blank: Tube Package D: TO-252-2 (1) M: SOIC-8 H: SOT-223 Package TO-252-2 (1) SOIC-8 SOT-223 Temperature Range -40 to 125oC -40 to 125oC o -40 to 125 C 2.5: Fixed Output 2.5V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V Part Number Lead Free Marking ID Green Lead Free Green Packing Type AP2213D-2.5E1 AP2213D-2.5G1 AP2213D-2.5E1 AP2213D-2.5G1 Tube AP2213D-2.5TRE1 AP2213D-2.5TRG1 AP2213D-2.5E1 AP2213D-2.5G1 Tape & Reel AP2213D-3.0E1 AP2213D-3.0G1 AP2213D-3.0E1 AP2213D-3.0G1 Tube AP2213D-3.0TRE1 AP2213D-3.0TRG1 AP2213D-3.0E1 AP2213D-3.0G1 Tape & Reel AP2213D-3.3E1 AP2213D-3.3G1 AP2213D-3.3E1 AP2213D-3.3G1 Tube AP2213D-3.3TRE1 AP2213D-3.3TRG1 AP2213D-3.3E1 AP2213D-3.3G1 Tape & Reel AP2213M-2.5E1 AP2213M-2.5G1 2213M-2.5E1 2213M-2.5G1 Tube AP2213M-2.5TRE1 AP2213M-2.5TRG1 2213M-2.5E1 2213M-2.5G1 Tape & Reel AP2213M-3.0E1 AP2213M-3.0G1 2213M-3.0E1 2213M-3.0G1 Tube AP2213M-3.0TRE1 AP2213M-3.0TRG1 2213M-3.0E1 2213M-3.0G1 Tape & Reel AP2213M-3.3E1 AP2213M-3.3G1 2213M-3.3E1 2213M-3.3G1 Tube AP2213M-3.3TRE1 AP2213M-3.3TRG1 2213M-3.3E1 2213M-3.3G1 Tape & Reel AP2213H-2.5TRE1 AP2213H-2.5TRG1 EH13C GH13C Tape & Reel AP2213H-3.0TRE1 AP2213H-3.0TRG1 EH13E GH13E Tape & Reel AP2213H-3.3TRE1 AP2213H-3.3TRG1 EH13F GH13F Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 4 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Input Voltage VIN 20 V Enable Input Voltage VEN 20 V PD Internally Limited (Thermal Protection) W TLEAD 260 o Junction Temperature TJ 150 oC Storage Temperature TSTG -65 to 150 oC ESD (Machine Model) ESD 300 V Thermal Resistance (No Heatsink) θJA Power Dissipation Lead Temperature (Soldering, 10sec) C TO-252-2 (1) 90 SOIC-8 160 SOT-223 108 o C/W Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Input Voltage VIN 2.5 18 V Enable Input Voltage VEN 0 18 V TJ -40 125 oC Operating Junction Temperature Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 5 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics AP2213-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 Unit Output Voltage Accuracy ∆VOUT/VOUT Output Voltage Temperature Coefficient (Note 3) ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 48 ppm/oC 1.5 Line Regulation VRLINE VIN=3.5V to 13.2V Load Regulation (Note 4) VRLOAD IOUT=0.1mA to 500mA 110 140 165 250 275 250 400 500 350 IOUT=500mA 600 700 VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) 1 5 VEN≥2.0V, IOUT=100µA 100 150 VEN≥2.0V, IOUT=50mA 350 600 VEN≥2.0V, IOUT=150mA 1.3 VEN≥2.0V, IOUT=300mA 4 VEN≥2.0V, IOUT=500mA 11 Nov. 2009 Rev. 1. 5 mV 350 IOUT=300mA IGND 150 300 VDROP IOUT=150mA Ground Pin Current (Note 6) 50 230 IOUT=100mA ISTD mV 70 IOUT=50mA Standby Current mV 7 17 15 IOUT=100µA Dropout Voltage (Note 5) 4.5 12 1 % 180 µA µA 800 1.9 2.5 10 mA 15 20 28 BCD Semiconductor Manufacturing Limited 6 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 700 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Enable Input Logic-low Voltage VIL Regulator shutdown Enable Input Logic-high Voltage VIH Regulator enabled Enable Input Logic-low Current IIL Enable Input Logic-high Current IIH Thermal Resistance θJC VIL≤0.4V Unit dB 1000 mA nV / Hz 0.4 V 0.18 2.0 V 0.01 VIL≤0.18V VIL≥2.0V Max 1 µA 2 5 VIL≥2.0V 20 µA 25 TO-252-2 (1) 20 SOIC-8 45 SOT-223 31 o C/W Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 7 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 Unit Output Voltage Accuracy ∆VOUT/VOUT Output Voltage Temperature Coefficient (Note 3) ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 40 ppm/oC 1.5 Line Regulation VRLINE VIN=4V to 13.2V Load Regulation (Note 4) VRLOAD IOUT=0.1mA to 500mA 150 140 250 165 mV 250 400 350 600 500 IOUT=500mA 700 VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) 1 5 VEN≥2.0V, IOUT=100µA 100 VEN≥2.0V, IOUT=50mA 350 VEN≥2.0V, IOUT=150mA 1.3 VEN≥2.0V, IOUT=300mA 4 VEN≥2.0V, IOUT=500mA 11 Nov. 2009 Rev. 1. 5 275 350 IOUT=300mA IGND 110 300 VDROP IOUT=150mA Ground Pin Current (Note 6) 50 230 IOUT=100mA ISTD mV 70 IOUT=50mA Standby Current mV 8 17 15 IOUT=100µA Dropout Voltage (Note 5) 4.5 12 1 % µA 150 180 600 µA 800 1.9 2.5 10 mA 15 20 28 BCD Semiconductor Manufacturing Limited 8 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 700 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Enable Input Logic-low Voltage VIL Regulator shutdown Enable Input Logic-high Voltage VIH Regulator enabled Enable Input Logic-low Current IIL Enable Input Logic-high Current IIH Thermal Resistance θJC VIL≤0.4V Unit dB 1000 mA nV / Hz 0.4 V 0.18 2.0 V 0.01 VIL≤0.18V VIL≥2.0V Max 1 µA 2 5 VIL≥2.0V 20 µA 25 TO-252-2 (1) 20 SOIC-8 45 SOT-223 31 o C/W Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 9 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 Unit Output Voltage Accuracy ∆VOUT/VOUT Output Voltage Temperature Coefficient (Note 3) ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 36.3 ppm/oC 1.5 Line Regulation VRLINE VIN=4.3V to 13.2V Load Regulation (Note 4) VRLOAD IOUT=0.1mA to 500mA 110 140 165 250 275 mV 400 500 350 IOUT=500mA 600 700 VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) 1 5 VEN≥2.0V, IOUT=100µA 100 VEN≥2.0V, IOUT=50mA 350 VEN≥2.0V, IOUT=150mA 1.3 VEN≥2.0V, IOUT=300mA 4 VEN≥2.0V, IOUT=500mA 11 Nov. 2009 Rev. 1. 5 250 350 IOUT=300mA IGND 150 300 VDROP IOUT=150mA Ground Pin Current (Note 6) 50 230 IOUT=100mA ISTD mV 70 IOUT=50mA Standby Current mV 9 18 15 IOUT=100µA Dropout Voltage (Note 5) 4.5 12 1 % µA 150 180 600 µA 800 1.9 2.5 10 mA 15 20 28 BCD Semiconductor Manufacturing Limited 10 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 700 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Enable Input Logic-low Voltage VIL Regulator shutdown Enable Input Logic-high Voltage VIH Regulator enabled Enable Input Logic-low Current IIL Enable Input Logic-high Current IIH Thermal Resistance θJC VIL≤0.4V Unit dB 1000 mA nV / Hz 0.4 V 0.18 2.0 V 0.01 VIL≤0.18V VIL≥2.0V Max 1 µA 2 5 VIL≥2.0V 20 µA 25 TO-252-2 (1) 20 SOIC-8 45 SOT-223 31 o C/W Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 11 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics 850 2.502 800 Output Voltage (V) 2.498 700 IOUT=100mA CIN=1µF, COUT=2.2µF 650 IOUT=150mA 600 IOUT=300mA 2.496 2.494 2.492 2.490 550 450 400 350 300 250 200 150 2.486 100 -40 -20 0 20 40 60 80 100 120 50 -60 140 -40 -20 20 40 60 80 100 120 140 Junction Temperature ( C) Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature 20 10 9 18 o TA=25 C 8 CIN=1µF, COUT=2.2µF Ground Pin Current (mA) Ground Pin Current (mA) 0 o o Junction Temperature ( C) 7 6 5 4 3 300 400 IOUT=300mA IOUT=500mA 8 6 0 -60 500 IOUT=150mA 10 2 200 IOUT=100mA 12 1 100 IOUT=50mA 14 4 0 AP2213-2.5 VIN=3.5V, CIN=1µF, COUT=2.2µF 16 2 0 CIN=1µF, COUT=2.2µF IOUT=500mA 500 2.488 2.484 -60 IOUT=50mA 750 Dropout Voltage (mV) 2.500 AP2213-2.5 VIN=3.5V, IOUT=10mA -40 -20 0 20 40 60 80 100 120 140 0 Junction Temperature ( C) Output Current (mA) Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 12 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 1.8 13 12 11 AP2213-2.5, VIN=3.5V 1.7 CIN=1µF, COUT=2.2µF, IOUT=100µA 1.6 VEN=1.8V 1.5 VEN=2V 9 VEN=3V 8 VEN=3.7V Enable Voltage (V) Enable Current (µA) 10 7 6 5 IOUT=100µA, VIN=3.5V 1.4 1.3 1.2 1.1 1.0 VEN=logic high 0.9 VEN=logic low 0.8 4 0.7 3 0.6 2 -60 AP2213-2.5 CIN=1µF, COUT=2.2µF -40 -20 0 20 40 60 80 100 120 0.5 -60 140 -40 -20 0 20 60 80 100 120 140 Junction Temperature ( C) Figure 9. Enable Voltage vs. Junction Temperature Figure 8. Enable Current vs. Junction Temperature 100 200 AP2213-2.5 IOUT=10mA, CIN=1µF, COUT=2.2µF IOUT=10mA 10 CIN=1µF, COUT=2.2µF Output Noise ( µV/ Hz) Noise Measurement Filter: DIN Noise 150 Noise (µVrms) 40 o o Junction Temperature ( C) 100 VIN=3.5V, CBYP=100pF 1 0.1 0.01 50 0.001 0 10 100 1000 0.0001 10 10000 100 1k 10k 100k 1M 10M Frequency (Hz) Bypass Capacitor (pF) Figure 10. Noise vs. Bypass Capacitor Figure 11. Output Noise vs. Frequency Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 13 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 5.5 VIN (1V/Div) AP2213-2.5 0.5 0 10mA ∆VOUT (10mV/Div) -0.5 ∆VOUT (10mV/Div) IOUT (0.5A/Div) 1 0 -10 -20 AP2213-2.5 4.5 3.5 2.5 10 0 -10 -20 -30 Time (200µs/Div) Time (200µs/Div) Figure 13. Line Transient (Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100µA, CBYP=100pF, COUT=2.2µF) Figure 12. Load Transient (Conditions: VIN=3.5V, CBYP=100pF, VEN=2V, IOUT=10 to 500mA, CIN=1µF, COUT=2.2µF) 3 100 VOUT (1V/Div) 2 AP2213-2.5 VIN=3.5V, VRIPPLE=1VPP 90 80 1 IOUT=10mA, COUT=2.2µF 70 0 PSRR (dB) VEN (1V/Div) AP2213-2.5 2 60 50 40 30 1 20 0 10 0 10 -1 100 1k 10k 100k 1M Frequency (Hz) Time (40µs/Div) Figure 15. PSRR vs. Frequency Figure 14. VEN vs. VOUT (Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA, CBYP=open, CIN=1µF, COUT=2.2µF) Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 14 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 1.4 1.4 TO-252-2(1) Package No Heatsink SOIC-8 Package No Heatsink 1.2 Power Dissipation (W) Power Dissipation (W) 1.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.4 0.2 0.2 0.0 25 50 75 100 125 0.0 25 150 50 75 100 Figure 16. Power Dissipation vs. Ambient Temperature 1000 COUT=2.2µF COUT=1µF No Bypass Capacitor 100 10 Stable Area 1 No Bypass Capacitor 100 ESR (Ω) ESR (Ω) 150 Figure 17. Power Dissipation vs. Ambient Temperature 1000 10 Stable Area 1 0.1 0.1 0.01 125 o Ambient Temperature ( C) o Ambient Temperature ( C) 0 50 100 150 200 250 300 350 400 450 0.01 500 0 50 100 150 200 250 300 350 400 450 500 Output Current (mA) Output Current (mA) Figure 18. ESR vs. Output Current Figure 19. ESR vs. Output Current Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 15 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 1000 COUT=4.7µF No Bypass Capacitor ESR (Ω) 100 10 Stable Area 1 0.1 0.01 0 50 100 150 200 250 300 350 400 450 500 Output Current (mA) Figure 20. ESR vs. Output Current Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 16 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Application VIN=3.5V VIN VIN AP2213-2.5 VOUT VOUT=2.5V VOUT EN CIN GND BYP 1µF COUT 2.2µF CBYP 100pF Figure 21. Typical Application of AP2213 (Note 7) Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.35V is the minimum input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage is VOUT+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(VOUT+1V) to 18V. Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 17 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Application Information Input Capacitor A 1µF minimum capacitor is recommended to be placed between VIN and GND. To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: TJ = PD*θJA + TA PD=(VIN-VOUT)*IOUT+VIN*IGND Output Capacitor It is required to prevent oscillation. 1µF minimum is recommended when CBYP is unused. 2.2µF minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient response. Where: TJ≤TJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be ignored due to its small value. TJ(max) is 150oC, θJA is 90oC/W for TO-252-2 (1) package and 160oC/W for SOIC-8 package. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. Example: For 2.5V version packaged in SOIC-8, IOUT=500mA, TA=50oC, VIN(Max) is: (150oC-50oC)/(0.5A*160oC/W)+2.5V=3.75V The start-up speed of the AP2213 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. Therefore, for good performance, please make sure that input voltage is less than 3.75V without heatsink when TA=50oC. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown. Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 18 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Mechanical Dimensions 1.350(0.053) 1.650(0.065) TO-252-2(1) 6.350(0.250) 6.650(0.262) 5.200(0.205) 5.400(0.213) Unit: mm(inch) 2.200(0.087) 2.400(0.094) 0.430(0.017) 0.580(0.023) 4.300(0.169) 5.400(0.212) 5° 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028) 2.300TYP 4.500(0.177) 4.700(0.165) 1.400(0.055) 1.780(0.070) 5° 3° 4° 0.430(0.017) 0.580(0.023) Nov. 2009 Rev. 1. 5 4.800(0.189) 6.500(0.256) 3.800REF(0.150REF) 5.400(0.213) 5.700(0.224) 0.000(0.000) 0.127(0.005) 2.550(0.100) 2.900(0.114) 0.600(0.024) 0.900(0.035) 9.500(0.374) 9.900(0.390) 8° BCD Semiconductor Manufacturing Limited 19 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) φ 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1° 5° R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 20 500mA LOW NOISE LDO REGULATOR AP2213 Mechanical Dimensions (Continued) SOT-223 Unit: mm(inch) 6.300(0.248) 6.700(0.264) ) 0.250(0.010 ) 14 .0 0.350(0 2.900(0.114) 3.100(0.122) 0.900(0.035) 3.700(0.146) 3.300(0.130) 7.300(0.287) 6.700(0.264) MIN 0.250(0.010) 1.750(0.069) TYP 2.300(0.091) 0.610(0.024) TYP 0.810(0.032) 4.500(0.177) 0° 10° 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.500(0.059) 1.520(0.060) 1.700(0.067) 1.800(0.071) Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 21 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Room E, 5F, Noble Center, No.1006,Manufacturing 3rd Fuzhong Road, Futian District,Office Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Co., Ltd. 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