DATA SHEET MUN5211DW Series SEMICONDUCTOR Dual Bias ResistorTransistors H NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 6 5 4 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Pb-Free Package is available 1 2 3 SC-88/SOT-363 6 MAXIMUM RATINGS 5 (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Symbol Value 50 V CBO V CEO 50 IC 100 Symbol PD R θJA Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 670 (Note 1.) 490 (Note 2.) R2 Q1 R2 R1 1 T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient R1 Q2 Unit Vdc Vdc mAdc 4 Unit mW MARKING DIAGRAM 6 5 4 7X mW/°C °C/W 3 2 2 1 3 7X = Device Marking = (See Page 2) Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) Unit mW mW/°C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. 3.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Thermal Resistance – R θJA R θJL Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad http://www.yeashin.com T J , T stg 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) °C/W –55 to +150 °C °C/W 2. FR–4 @ 1.0 x 1.0 inch Pad 1 REV.02 20120403 MUN5211DW Series DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R1(K) R2(K) Shipping MUN5211DW SOT-363 7A 10 10 3000/Tape&Reel MUN5212DW SOT-363 7B 22 22 3000/Tape&Reel MUN5213DW SOT-363 7C 47 47 3000/Tape&Reel MUN5214DW SOT-363 7D 10 47 3000/Tape&Reel MUN5215DW SOT-363 7E 10 Ğ 3000/Tape&Reel MUN5216DW SOT-363 7F 4.7 Ğ 3000/Tape&Reel MUN5230DW SOT-363 7G 1 1 3000/Tape&Reel MUN5231DW SOT-363 7H 2.2 2.2 3000/Tape&Reel MUN5232DW SOT-363 7J 4.7 4.7 3000/Tape&Reel MUN5233DW SOT-363 7K 4.7 47 3000/Tape&Reel MUN5234DW SOT-363 7L 22 47 3000/Tape&Reel MUN5235DW SOT-363 7M 2.2 47 3000/Tape&Reel MUN5236DW SOT-363 7N 100 100 3000/Tape&Reel MUN5237DW SOT-363 7P 47 22 3000/Tape&Reel http://www.yeashin.com 2 REV.02 20120403 ELECTRICAL CHARACTERISTICS MUN5211DW Series ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO Min Typ Max Unit – – 100 nAdc – – – – 500 0.5 nAdc mAdc – – 0.2 – – – – – – 0.1 0.2 0.9 – – – – MUN5231DW MUN5232DW MUN5233DW MUN5234DW – MUN5235DW – – – – – – 1.9 4.3 2.3 1.5 0.18 0.13 0.2 – 0.05 – – – 0.13 – – Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) Emitter-Base Cutoff Current (V EB = 6.0 V, I C = 0) MUN5211DW MUN5212DW MUN5213DW I CEO I EBO MUN5214DW MUN5215DW MUN5216DW MUN5230DW – – – MUN5236DW MUN5237DW Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0) Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CBO V (BR)CEO – – 50 50 Vdc Vdc 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% http://www.yeashin.com 3 REV.02 20120403 ELECTRICAL CHARACTERISTICS MUN5211DW Series ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic (Continued) Symbol Min Typ Max h FE 35 60 80 80 60 100 140 140 – 160 160 3.0 8.0 15 350 350 5.0 15 30 80 200 – – – – – 80 80 80 80 150 140 150 140 – – – – – – Unit ON CHARACTERISTICS(Note 5.) DC Current Gain (V CE = 10 V, I C = 5.0 mA) MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat) (I C= 10mA, I B= 5mA) MUN5230DW/MUN5231DW MUN5215DW/MUN5216DW (I C= 10mA, IB= 1mA) MUN5232D/MUN5233DW/MUN5234DW Output Voltage (on) V OL MUN5211DW (V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ) MUN5212DW MUN5214DW MUN5215DW MUN5216DW – – MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ) MUN5213DW (V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ) MUN5236DW (V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ) MUN5237DW Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ) (V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ) (V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ) – – – V OH – – – – – – – – 0.25 0.2 Vdc 0.2 0.2 0.2 – 0.2 – – – – 0.2 – – – – – – – – – – – – 4.9 – – – Vdc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 – Vdc MUN5230DW MUN5215DW MUN5216DW MUN5233DW 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://www.yeashin.com 4 REV.02 20120403 ELECTRICAL CHARACTERISTICS MUN5211DW Series ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic ON CHARACTERISTICS(Note 6.) MUN5211DW Input Resistor (Continued) Symbol Min Typ Max Unit R1 7.0 15.4 32.9 10 22 47 13 kΩ 7.0 7.0 10 10 4.7 MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW 3.3 0.7 MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW Resistor Ratio MUN5235DW MUN5236DW MUN5237DW MUN5211DW/MUN5212DW MUN5213DW/MUN5236DW MUN5214DW/MUN5215DW 1.0 28.6 61.1 13 13 6.1 1.3 2.9 1.5 2.2 3.3 3.3 15.4 1.54 70 32.9 4.7 4.7 22 2.2 100 47 6.1 6.1 28.6 0.8 0.17 – 0.8 1.0 0.21 – 1.0 1.2 0.25 – 1.2 0.055 0.1 0.185 0.38 0.47 0.56 0.038 1.7 0.047 2.1 0.056 2.6 2.86 130 61.1 R 1 /R 2 MUN5216DW/MUN5230DW MUN5231DW/MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5237DW 6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% P D , POWER DISSIPATION (mW) 300 250 200 150 100 833°C 50 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://www.yeashin.com 5 REV.02 20120403 DEVICE CHARACTERISTICS MUN5211DW Series 1 0.1 0.01 0.001 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS –MUN5211DW 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C Figure 3. DC Current Gain 100 I C , COLLECTOR CURRENT (mA) 4 C ob CAPACITANCE (pF) 1000 3 2 1 10 1 0.1 0.01 0.001 0 0 10 20 30 40 0 50 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://www.yeashin.com 6 REV.02 20120403 DEVICE CHARACTERISTICS TYPICAL ELECTRICAL CHARACTERISTICS – MUN5212DW 10 1 0.1 0.01 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) MUN5211DW Series 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain 100 I C , COLLECTOR CURRENT (mA) 4 C ob CAPACITANCE (pF) 1000 3 2 1 10 1 0.1 0.01 0.001 0 0 10 20 30 40 0 50 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://www.yeashin.com 7 REV.02 20120403 10 DEVICE CHARACTERISTICS TYPICAL ELECTRICAL CHARACTERISTICS – MUN5213DW 10 1 0.1 0.01 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) MUN5211DW Series 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain 1 100 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 1000 0.8 0.6 0.4 0.2 10 1 0.1 0.01 0.001 0 0 10 20 30 40 0 50 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://www.yeashin.com 8 REV.02 20120403 10 DEVICE CHARACTERISTICS TYPICAL ELECTRICAL CHARACTERISTICS – MUN5214DW 1 0.1 0.01 0.001 0 20 40 60 80 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) MUN5211DW Series 250 200 150 100 50 0 1 2 3 4 5 10 15 20 40 50 60 70 80 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain 4 90 100 I C , COLLECTOR CURRENT (mA) 100 3.5 C ob CAPACITANCE (pF) 300 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 10 1 50 0 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://www.yeashin.com 9 REV.02 20120403 10 PACKAGE OUTLINE & DIMENSIONS MUN5211DW Series SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI A Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. G MIN 0.071 INCHES MAX 0.087 0.045 0.031 0.004 0.053 0.043 0.012 DIM 6 5 4 A B - B- S 1 2 C D 3 G 0.2 (0.008) M B M D6PL N J MILLIMETERS MIN MAX 1.80 2.20 1.15 0.80 0.10 0.026 BSC 1.35 1.10 0.30 0.65 BSC H J --0.004 0.004 0.010 --0.10 0.10 0.25 K N 0.004 0.012 0.008 REF 0.10 0.30 0.20 REF S 0.079 2.00 2.20 0.087 C PIN 1. EMITTER 2 K H 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm http://www.yeashin.com 10 REV.02 20120403