Diotec BCW31 Surface mount general purpose si-epi-planar transistor Datasheet

BCW31 ... BCW33
BCW31 ... BCW33
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
NPN
NPN
Version 2006-07-28
Power dissipation – Verlustleistung
1.1
2.9 ±0.1
0.4
Plastic case
Kunststoffgehäuse
1
1.3±0.1
2.5 max
3
Type
Code
250 mW
2
1.9
Dimensions - Maße [mm]
1=B
2=E
3=C
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BCW31
BCW32
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
32 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
32 V
Collector-Base-voltage – Kollektor-Basis-Spannung
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
BCW33
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 µA
BCW31
BCW32
BCW33
hFE
hFE
hFE
–
–
–
90
150
270
–
–
–
VCE = 5 V, IC = 2 mA
BCW31
BCW32
BCW33
hFE
hFE
hFE
110
200
420
–
–
–
220
450
800
–
–
120 mV
210 mV
250 mV
–
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
1
2
VCEsat
VCEsat
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BCW31 ... BCW33
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
VBEsat
VBEsat
–
–
750 mV
850 mV
–
–
VBE
550 mV
–
700 mV
ICB0
ICB0
–
–
–
–
100 nA
10 µA
IEB0
–
–
100 nA
fT
100 MHz
–
–
CCBO
–
2.5 pF
6 pF
F
–
–
10 dB
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
IC = 2 mA, VCE = 5 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 100°C, (E open)
Emitter-Base cutoff current
VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
2
1
2
RthA
< 420 K/W 1)
BCW29, BCW30
BCW31 = D1
BCW32 = D2
BCW33 = D3
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
Similar pages