ON NTE4151P Small signal mosfet −20 v, −760 ma, single p−channel, gate zener, sc−75, sc−89 Datasheet

NTA4151P, NTE4151P
Small Signal MOSFET
−20 V, −760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
•
•
•
•
•
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Low RDS(on) for Higher Efficiency and Longer Battery Life
Small Outline Package (1.6 x 1.6 mm)
SC−75 Standard Gullwing Package
ESD Protected Gate
Pb−Free Packages are Available
V(BR)DSS
RDS(on) TYP
ID MAX
0.26 W @ −4.5 V
0.35 W @ −2.5 V
−20 V
−760 mA
0.49 W @ −1.8 V
Applications
•
•
•
•
High Side Load Switch
DC−DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
P−Channel MOSFET
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6.0
V
ID
−760
mA
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
SC−75
SC−89
Steady State
PD
mW
301
313
Steady State
IDM
±1000
mA
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
−250
mA
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
ESD
1800
V
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
S
MARKING DIAGRAM
& PIN ASSIGNMENT
3
2
1
SC−75 / SOT−416
CASE 463
STYLE 5
3
Drain
xx M G
G
3
2
1
1
Gate
2
Source
SC−89
CASE 463C
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
SC−75
SC−89
G
°C/W
RqJA
415
400
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 5
1
Publication Order Number:
NTA4151P/D
NTA4151P, NTE4151P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −16 V
−1.0
−100
nA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±4.5 V
$1.0
$10
mA
W
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = −250 mA
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −350 mA
0.26
0.36
VGS = −2.5 V, ID = −300 mA
0.35
0.45
VGS = −1.8 V, ID = −150 mA
0.49
1.0
gFS
VDS = −10 V, ID = −250 mA
0.4
S
VGS = 0 V, f = 1.0 MHz,
VDS = −5.0 V
156
pF
Forward Transconductance
−0.45
V
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
28
18
VGS = −4.5 V, VDD = −10 V,
ID = −0.3 A
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.325
Gate−to−Drain Charge
QGD
0.5
nC
2.1
0.125
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
VGS = −4.5 V, VDD = −10 V,
ID = −200 mA, RG = 10 W
8.2
td(OFF)
29
tf
20.4
Fall Time
ns
8.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = −250 mA
−0.72
−1.1
V
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Marking
Package
Shipping †
NTA4151PT1
TN
SC−75
3000/Tape & Reel
NTA4151PT1G
TN
SC−75
(Pb−Free)
3000/Tape & Reel
NTE4151PT1G
TM
SC−89
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTA4151P, NTE4151P
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.7
VDS w −10 V
0.6
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
TJ = 25°C
−1.5 V
0.5
VGS = −1.75 V to −4.5 V
0.4
−1.25 V
0.3
0.2
0.1
−1.0 V
0.5
0.4
0.3
0.2
TJ = 25°C
TJ = 125°C
0.1
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
0
3.0
0.4
1.6
Figure 2. Transfer Characteristics
0.5
0.4
TJ = 125°C
0.3
TJ = 25°C
TJ = −55°C
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2.0
0.6
VGS = −2.5 V
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.1
0.2
−ID, DRAIN CURRENT (AMPS)
0.3
0.4
0.5
0.6
0.7
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
250
ID = − 0.35 A
VGS = −4.5 V
TJ = 25°C
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.2
Figure 1. On−Region Characteristics
VGS = −4.5 V
1.4
0.8
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.6
0
0
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.2
1.0
0.8
0.6
−50
200
CISS
150
100
COSS
50
−25
0
25
50
75
100
125
150
0
CRSS
0
TJ, JUNCTION TEMPERATURE (°C)
4
8
12
16
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTA4151P, NTE4151P
0.7
5
QT
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
4
3
QGS
2
QGD
VDS = −10 V
ID = −0.3 A
TA = 25°C
1
0
0
0.4
2.0
0.8
1.2
1.6
QG, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.1
TJ = 25°C
0
2.4
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
0.1
0
0.2
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
1.0
TJ = 125°C
0.2
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 9. Normalized Thermal Response
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4
10
100
1000
NTA4151P, NTE4151P
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
0.20 (0.008) E
HE
C
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
INCHES
NOM
0.031
0.002
0.008
0.006
0.063
0.031
0.04 BSC
0.004 0.006
0.061 0.063
MIN
0.027
0.000
0.006
0.004
0.059
0.027
MAX
0.035
0.004
0.012
0.010
0.067
0.035
0.008
0.065
NTA4151P, NTE4151P
SC−89, 3 LEAD
CASE 463C−03
ISSUE C
A
−X−
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
B −Y− S
K
G
2 PL
D
0.08 (0.003)
M
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
N
M
C
J
−T−
MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 _
−−−
−−−
10 _
1.50
1.60
1.70
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF
−−−
−−−
10 _
−−−
−−−
10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009
SEATING
PLANE
SOLDERING FOOTPRINT*
H
H
L
G
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTA4151P/D
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