ON MJH11022 Darlington complementary silicon power transistor Datasheet

Order this document
by MJH11017/D
SEMICONDUCTOR TECHNICAL DATA
!$"& "$ %" "##$ "#
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
VCEO(sus) = 200 Vdc (Min) — MJH11020, 19
VCEO(sus) = 250 Vdc (Min) — MJH11022, 21
• Low Collector–Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
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MAXIMUM RATINGS
*Motorola Preferred Device
MJH
Rating
Symbol
Collector–Emitter Voltage
VCEO
VCB
Collector–Base Voltage
Emitter–Base Voltage
11018
11017
11020
11019
11022
11021
Unit
150
200
250
Vdc
150
200
250
Vdc
VEB
IC
Collector Current — Continuous
— Peak (1)
Base Current
Total Device Dissipation @ TC = 25_C
Derate Above 25_C
Operating and Storage Junction
Temperature Range
IB
PD
TJ, Tstg
5.0
Vdc
15
30
Adc
0.5
Adc
150
1.2
Watts
W/_C
– 65 to + 150
_C
15 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150, 200, 250 VOLTS
150 WATTS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
Symbol
Max
Unit
RθJC
0.83
_C/W
10%.
CASE 340D–02
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1996
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
200
250
—
—
—
—
—
—
1.0
1.0
1.0
—
—
0.5
5.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
Collector Cutoff Current
(VCE = 75 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
(VCE = 125 Vdc, IB = 0)
Vdc
ICEO
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
IEBO
—
2.0
mAdc
hFE
400
100
15,000
—
—
VCE(sat)
—
—
2.5
4.0
Vdc
Base–Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
—
2.8
Vdc
Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
VBE(sat)
—
3.8
Vdc
fT
3.0
—
—
Cob
—
—
400
600
pF
hfe
75
—
—
Symbol
NPN
PNP
Unit
Delay Time
td
150
75
ns
Rise Time
tr
1.2
0.5
µs
ts
4.4
2.7
µs
tf
2.5
2.5
µs
ON CHARACTERISTICS (1)
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc)
DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA)
Collector–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Typical
Characteristic
Storage Time
((VCC = 100 V,
V, IC = 10 A,
A, IB = 100 mA
A
VBE(off) = 5.0 V) (See Figure 2)
Fall Time
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2.0%.
VCC
100 V
RC
SCOPE
TUT
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB ≈ 100 mA
MSD6100 used below IB ≈ 100 mA
tr, tf ≤ 10 ns
Duty Cycle = 1.0%
V2
APPROX
+12 V
0
V1
APPROX
– 8.0 V
RB
51
25 µs
D1
+ 4.0 V
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
2
Motorola Bipolar Power Transistor Device Data
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
P(pk)
RθJC(t) = r(t) RθJC
RθJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Thermal Response
FORWARD BIAS
TC = 25°C SINGLE PULSE
30
20
0.1 ms
10
0.5 ms
1.0 ms
5.0
5.0 ms
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
2.0
1.0
0.5
0.2
0
20 30 50
100 150 250
2.0 3.0 5.0 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150 _ C. T J(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
REVERSE BIAS
IC, COLLECTOR CURRENT (AMPS)
30
20
L = 200 µH
IC/IB1 ≥ 50
TC = 100°C
VBE(off) = 0 – 5.0 V
RBE = 47 Ω
DUTY CYCLE = 10%
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an avalanche mode. Figure 5 gives RBSOA characteristics.
60
100
180
220
260
140
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
Motorola Bipolar Power Transistor Device Data
3
PNP
10,000
10,000
7000
5000
VCE = 5.0 V
3000
2000
TC = 150°C
1000
25°C
500
– 55°C
200
100
VCE = 5.0 V
5000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
NPN
TC = 150°C
2000
25°C
1000
500
– 55°C
200
100
0.2
0.3
0.5 0.7
1.0
3.0
5.0
10
0.2
15
0.3
0.5 0.7 1.0
3.0
5.0 7.0
10
15
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
NPN
4.5
4.0
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
PNP
TJ = 25°C
3.5
3.0
2.5
IC = 15 A
2.0
IC = 10 A
1.5
1.0
1.0
IC = 5.0 A
2.0 3.0 5.0
20 30
10
50
100 200 300 500
1000
4.5
4.0
TJ = 25°C
3.5
3.0
IC = 15 A
2.5
2.0
IC = 10 A
1.5
1.0
1.0
IC = 5.0 A
2.0 3.0 5.0
10
20 30
50
100 200 300 500 1000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP
NPN
4.0
4.0
3.5
TJ = 25°C
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
3.0
2.5
VBE(sat) @ IC/IB = 100
2.0
TJ = 25°C
3.5
1.5
3.0
2.5
VBE(sat) @ IC/IB = 100
2.0
1.5
VBE @ VCE = 5.0 V
VBE @ VCE = 5.0 V
1.0
1.0
VCE(sat) @ IC/IB = 100
0.5
0.2 0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
VCE(sat) @ IC/IB = 100
0.5
0.2
0.5 0.7 1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
20
PNP
MJH11017
MJH11019
MJH11021
NPN
MJH11018
MJH11020
MJH11022
COLLECTOR
BASE
COLLECTOR
BASE
EMITTER
EMITTER
Figure 9. Darlington Schematic
Motorola Bipolar Power Transistor Device Data
5
PACKAGE DIMENSIONS
C
Q
B
U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
2
3
D
J
H
MILLIMETERS
MIN
MAX
–––
20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
–––
16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
–––
0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
–––
0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–02
ISSUE B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
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6
◊
*MJH11017/D*
Motorola Bipolar Power Transistor Device
Data
MJH11017/D
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