Fairchild FDS7082N3 30v n-channel powertrench mosfet Datasheet

FDS7082N3
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET in the thermally enhanced
SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters.
Providing a balance of low RDS(ON) and Qg it is ideal for
synchronous rectifier applications in both isolated and
non-isolated topologies. It is also well suited for both
high and low side switch applications in Point of Load
converters.
• 17.5 A, 30 V
RDS(ON) = 6 mΩ @ VGS = 10 V
RDS(ON) = 8 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low Qg and Rg for fast switching
Applications
• FLMP SO-8 package for enhanced thermal
performance in an industry-standard package outline.
• Secondary side Synchronous rectifier
• Synchronous Buck VRM and POL Converters
5
Absolute Maximum Ratings
Symbol
Bottom-side
Drain Contact
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
17.5
A
PD
Power Dissipation for Single Operation
(Note 1a)
3.0
(Note 1b)
1.5
– Continuous
– Pulsed
TJ, TSTG
60
W
–55 to +150
°C
(Note 1a)
40
°C/W
(Note 1)
0.5
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7082N3
FDS7082N3
13’’
12mm
2500 units
2004 Fairchild Semiconductor Corporation
FDS7082N3 Rev D1 (W)
FDS7082N3
February 2004
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
VGS = 0 V, ID = 250 µA
30
V
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
10
µA
Gate–Body Leakage
VGS = ± 20 V, VDS = 0 V
± 100
nA
3
V
On Characteristics
24
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
1
2
–4.3
mV/°C
VGS = 10 V, ID = 17.5 A
VGS = 4.5 V, ID = 15.5 A
VGS = 10 V, ID = 17.5 A,TJ = 125°C
VDS = 10 V, ID = 17.5 A
4.9
6.5
5.0
116
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
2271
pF
554
pF
213
pF
1.4
Ω
6.0
8.0
8.0
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
VGS = 15 mV,
f = 1.0 MHz
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
14
20
ns
ns
tr
Turn–On Rise Time
12
37
td(off)
Turn–Off Delay Time
38
64
ns
tf
Turn–Off Fall Time
18
32
ns
Qg
Total Gate Charge
VDS = 15 V, ID = 17.5 A, VGS =10 V
43
53
nC
Qg
Total Gate Charge
VDS = 15 V, ID = 17.5 A, VGS = 5 V
22
31
nC
Qgs
Gate–Source Charge
6.8
nC
Qgd
Gate–Drain Charge
6.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.5 A
Voltage
IF = 17.5 A,
Diode Reverse Recovery Time
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
(Note 2)
0.7
2.5
A
1.2
V
31
nS
21
nC
FDS7082N3 Rev D1 (W)
FDS7082N3
Electrical Characteristics
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7082N3 Rev D1 (W)
FDS7082N3
Electrical Characteristics
FDS7082N3
Typical Characteristics
60
3
4.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
4.5V
6.0V
40
3.5V
20
3.0V
0
0
0.5
1
VDS, DRAIN-SOURCE VOLTAGE (V)
2.6
2.4
2.2
2
1.8
4.0V
1.6
4.5V
1.4
5.0V
1.2
6.0V
1
10V
0.8
0
1.5
Figure 1. On-Region Characteristics.
10
20
30
40
ID, DRAIN CURRENT (A)
50
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
1.6
ID = 8.75A
ID = 17.5A
VGS = 10V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
2.8
1.2
1
0.8
0.6
0.018
0.014
TA = 125oC
0.01
TA = 25oC
0.006
0.002
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
2
Figure 3. On-Resistance Variation
withTemperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
50
40
30
TA =125oC
25oC
20
-55oC
10
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7082N3 Rev D1 (W)
FDS7082N3
Typical Characteristics
10
3000
f = 1MHz
VGS = 0 V
2500
8
VDS = 5V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 17.5A
10V
6
15V
4
Ciss
2000
1500
1000
2
Coss
500
Crss
0
0
0
10
20
30
Qg, GATE CHARGE (nC)
40
50
0
Figure 7. Gate Charge Characteristics.
20
Figure 8. Capacitance Characteristics.
50
1000
100
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
ID , D R A IN C U R R E N T (A )
5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
100µs
1ms
10ms
100ms
1s
10
1
10s
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 85 C/W
0.1
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
40
30
20
10
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1.00
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
0.2
0.10
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.00
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS7082N3 Rev D1 (W)
FDS7082N3
Dimensional Outline and Pad Layout
FDS7082N3 Rev D1 (W)
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I8
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