APT22F120B2 APT22F120L 1200V, 22A, 0.80Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-MaxTM APT22F120B2 TO-264 APT22F120L Single die FREDFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 22 Continuous Drain Current @ TC = 100°C 14 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1875 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 12 A 1 90 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 9-2006 Typ Rev A Min Characteristic 050-8081 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 1200 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 12A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1200V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance 0.80 5 250 1000 ±100 TJ = 125°C Min Test Conditions VDS = 50V, ID = 12A f = 1MHz Co(er) 5 Effective Output Capacitance, Energy Related Typ Max 27 8370 100 615 VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related µA nA Unit S pF 240 VGS = 0V, VDS = 0V to 800V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tf 1.41 0.63 4 -10 Unit V V/°C Ω V mV/°C TJ = 25°C unless otherwise specified 4 td(off) Max VGS = ±30V Co(cr) tr Typ TJ = 25°C VGS = 0V Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) APT22F120B2_L 125 260 42 120 45 27 145 42 VGS = 0 to 10V, ID = 12A, VDS = 600V Resistive Switching VDD = 800V, ID = 12A Current Rise Time RG = 2.2Ω 6 , VGG = 15V Turn-Off Delay Time Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current Peak Recovery dv/dt Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage trr dv/dt Test Conditions Max 100 A G 90 S ISD = 12A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 12A 3 TJ = 25°C diSD/dt = 100A/µs TJ = 125°C Unit TJ = 25°C TJ = 125°C ISD ≤ 12A, di/dt ≤1000A/µs, VDD = 800V, TJ = 125°C 230 500 13 35 11 15 1.1 270 640 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 26.04mH, RG = 2.2Ω, IAS = 12A. 050-8081 Rev A 9-2006 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.80E-7/VDS^2 + 4.62E-8/VDS + 6.57E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 60 V GS = 10V 16 TJ = -55°C ID, DRIAN CURRENT (A) 40 30 TJ = 25°C 20 10 GS 12 5V 8 4 4.5V TJ = 125°C TJ = 150°C 0 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 90 NORMALIZED TO 2.5 2.0 1.5 1.0 0.5 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 70 60 TJ = -55°C 50 TJ = 25°C 40 TJ = 125°C 30 20 10 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 35 0 8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 30 C, CAPACITANCE (pF) TJ = -55°C 25 TJ = 25°C 20 TJ = 125°C 15 10 1000 Coss 100 5 16 12 10 8 6 4 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 2 800 1000 1200 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 240V 10 VDS = 600V 8 6 VDS = 960V 4 2 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 90 ID = 12A 14 0 10 14 80 70 60 50 40 TJ = 25°C 30 TJ = 150°C 20 10 0 1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 9-2006 0 Rev A 0 Crss ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 80 VGS = 10V @ 12A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics Figure 1, Output Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) = 6, 7, 8 & 9V V 050-8081 ID, DRAIN CURRENT (A) T = 125°C J 50 0 APT22F120B2_L 20 200 100 100 I DM ID, DRAIN CURRENT (A) 10 13µs 100µs 1ms 1 Rds(on) 0.1 I DM Rds(on) 10 13µs 100µs 1ms TJ = 150°C TC = 25°C 1 DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 10ms Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25 C)*(TJ - TC)/125 ° C DC line 100ms TJ = 125°C TC = 75°C 1 10ms APT22F120B2_L 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area TJ (°C) TC (°C) 0.0474 0.0408 0.0316 Dissipated Power (Watts) 0.0178 0.103 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ZEXT ID, DRAIN CURRENT (A) 200 0.636 Figure 11, Transient Thermal Impedance Model 0.12 D = 0.9 0.10 0.7 0.08 Note: 0.5 0.06 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.14 0.04 0.3 0.02 0.1 t2 t1 = Pulse Duration SINGLE PULSE 0 t1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 9-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8081 Rev A Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 1.0