NXP BLS7G2729LS-350P Ldmos s-band radar power transistor Datasheet

BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 1 — 24 May 2011
Objective data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
VDS
PL
Gp
ηD
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
2.7 to 2.9
32
350
13.5
50
20
6
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage
of 32 V, an IDq of 200 mA, a tp of 300 μs with δ of 10 %:
‹ Output power = 350 W
‹ Power gain = 13.5 dB
‹ Efficiency = 50 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for S-band operation (2.7 GHz to 2.9 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ S-band power amplifiers for radar applications in the 2.7 GHz to 2.9 GHz frequency
range
BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLS7G2729L-350P (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
2
1
5
2
3
4
3
sym112
[1]
source
BLS7G2729LS-350P (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
[1]
1
1
2
5
3
2
3
4
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLS7G2729L-350P
Name Description
Version
-
flanged balanced LSMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
earless flanged balanced LSMOST ceramic package;
4 leads
SOT539B
BLS7G2729LS-350P -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLS7G2729L-350P_LS-350P
Objective data sheet
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
-
60
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
33
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
© NXP B.V. 2011. All rights reserved.
2 of 10
BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Zth(j-mb)
Conditions
transient thermal impedance from junction
to mounting base
Typ
Unit
Tcase = 85 °C; PL = 150 W
tp = 100 μs; δ = 10 %
<tbd> K/W
tp = 200 μs; δ = 10 %
<tbd> K/W
tp = 300 μs; δ = 10 %
<tbd> K/W
tp = 100 μs; δ = 20 %
<tbd> K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.2 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 220 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
34
39
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 11.0 A
-
16.2
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 7.7 A
-
0.065
-
Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 32 V; IDq = 200 mA;
Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit.
BLS7G2729L-350P_LS-350P
Objective data sheet
Symbol
Parameter
Conditions
PL
output power
VCC
supply voltage
PL = 350 W
Gp
power gain
PL = 350 W
RLin
input return loss
PL = 350 W
PL(1dB)
output power at 1 dB gain compression
ηD
drain efficiency
PL = 350 W
Pdroop(pulse)
pulse droop power
PL = 350 W
-
tr
rise time
PL = 350 W
-
tf
fall time
PL = 350 W
-
6
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
Min Typ
Max
Unit
-
350
-
W
-
-
32
V
12
13.5
-
dB
-
−10
-
dB
-
<tbd> -
W
45
50
-
%
0
0.3
dB
20
50
ns
50
ns
© NXP B.V. 2011. All rights reserved.
3 of 10
BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
Table 8.
Typical impedance
f
ZS
ZL
GHz
Ω
Ω
2.7
<tbd>
<tbd>
2.8
<tbd>
<tbd>
2.9
<tbd>
<tbd>
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 32 V; IDq = 200 mA; PL = 350 W; tp = 300 μs; δ = 10 %.
BLS7G2729L-350P_LS-350P
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
© NXP B.V. 2011. All rights reserved.
4 of 10
BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
8. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.185 0.465 0.007 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.165 0.455 0.004 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
00-03-03
10-02-02
SOT539A
Fig 2.
EUROPEAN
PROJECTION
Package outline SOT539A
BLS7G2729L-350P_LS-350P
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
© NXP B.V. 2011. All rights reserved.
5 of 10
BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
Earless flanged balanced LDMOST ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
mm
mm
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
nom
0.01
0.54
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
max
nom
min
A
b
E
E1
4.7
11.81
0.18 31.55 31.52
c
D
D1
9.5
9.53
e
4.2
11.56
0.10 30.94 30.96
9.3
9.27
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.77 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
Issue date
10-02-02
11-02-17
SOT539B
Fig 3.
sot539b_po
European
projection
Package outline SOT539B
BLS7G2729L-350P_LS-350P
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
© NXP B.V. 2011. All rights reserved.
6 of 10
BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
S-band
Short wave Band
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLS7G2729L-350P_LS-350P v.1
20110524
Objective data sheet
-
-
BLS7G2729L-350P_LS-350P
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
© NXP B.V. 2011. All rights reserved.
7 of 10
BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
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malfunction of an NXP Semiconductors product can reasonably be expected
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
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Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
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NXP Semiconductors does not accept any liability related to any default,
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customer’s applications or products, or the application or use by customer’s
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the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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changes to information published in this document, including without
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BLS7G2729L-350P_LS-350P
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
© NXP B.V. 2011. All rights reserved.
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BLS7G2729L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
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the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
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NXP Semiconductors’ specifications such use shall be solely at customer’s
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use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLS7G2729L-350P_LS-350P
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 May 2011
© NXP B.V. 2011. All rights reserved.
9 of 10
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Handling information. . . . . . . . . . . . . . . . . . . . . 7
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 May 2011
Document identifier: BLS7G2729L-350P_LS-350P
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