Infineon IPD50R380CE 500v coolmos⪠ce power transistor Datasheet

IPD50R380CE
MOSFET
500VCoolMOSªCEPowerTransistor
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
tab
1
2
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2
Gate
Pin 1
Applications
Source
Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.38
Ω
ID
14.1
A
Qg,typ
24.8
nC
ID,pulse
32.4
A
Eoss @ 400V
2.54
µJ
Type/OrderingCode
Package
IPD50R380CE
PG-TO 252
Final Data Sheet
Marking
50S380CE
1
RelatedLinks
see Appendix A
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
14.1
8.9
A
TC = 25°C
TC = 100°C
-
32.4
A
TC=25°C
-
-
173
mJ
ID =4A; VDD = 50V
EAR
-
-
0.26
mJ
ID =4A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
4.0
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-252
Ptot
-
-
98
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
Continuous diode forward current
IS
-
-
10
A
TC=25°C
Diode pulse current
IS,pulse
-
-
32.4
A
TC = 25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
Maximum diode commutation speed3)
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
2Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-252
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
1.27
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
1.6mm (0.063 in.) from case for 10s
1)
Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
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500VCoolMOSªCEPowerTransistor
IPD50R380CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.50
V
VDS=VGS,ID=0.26mA
-
10
1
-
µA
VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.35
0.90
0.38
-
Ω
VGS=13V,ID=3.2A,Tj=25°C
VGS=13V,ID=3.2A,Tj=150°C
Gate resistance
RG
-
3
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
500
-
Gate threshold voltage
V(GS)th
2.50
Zero gate voltage drain current
IDSS
Gate-source leakage curent
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
584
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
40
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1)
Co(er)
-
32
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
133
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
7.2
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Rise time
tr
-
5.6
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Turn-off delay time
td(off)
-
35
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Fall time
tf
-
8.6
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
3.1
-
nC
VDD=400V,ID=3.9A,VGS=0to10V
Gate to drain charge
Qgd
-
13.1
-
nC
VDD=400V,ID=3.9A,VGS=0to10V
Gate charge total
Qg
-
24.8
-
nC
VDD=400V,ID=3.9A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.3
-
V
VDD=400V,ID=3.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)
Final Data Sheet
4
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=3.9A,Tf=25°C
207
-
ns
VR=400V,IF=3.9A,diF/dt=100A/µs
-
1.7
-
µC
VR=400V,IF=3.9A,diF/dt=100A/µs
-
15.5
-
A
VR=400V,IF=3.9A,diF/dt=100A/µs
Min.
Typ.
Max.
VSD
-
0.85
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
100
90
1 µs
80
10
1
70
10 µs
100 µs
ID[A]
Ptot[W]
60
50
10
1 ms
0
10 ms
40
DC
30
10-1
20
10
0
0
40
80
120
10-2
160
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
1 µs
101
100
ZthJC[K/W]
ID[A]
10 µs
100 µs
100
1 ms
10 ms
0.2
0.1
10
-1
0.05
0.02
DC
10-1
10-2
0.5
0.01
single pulse
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
6
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
Typ.outputcharacteristicsTj=25°C
Typ.outputcharacteristicsTj=125°C
40
25
35
20 V
30
10 V
20 V
10 V
20
25
15
7V
ID[A]
ID[A]
8V
8V
20
7V
10
15
10
6V
5.5 V
6V
5
5.5 V
5
5V
4.5 V
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance
Drain-sourceon-stateresistance
1.4
1.2
1.0
1.2
5.5 V
7V
0.8
6V
98%
RDS(on)[Ω]
RDS(on)[Ω]
5V
6.5 V
1.0
0.6
typ
0.4
10 V
0.8
0.2
0.6
0
5
10
15
20
0.0
-50
-25
0
25
ID[A]
75
100
125
150
175
Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
RDS(on)=f(Tj);ID=3.2A;VGS=13V
7
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
Typ.transfercharacteristics
Typ.gatecharge
35
10
25 °C
9
30
8
25
120 V
7
400 V
6
VGS[V]
ID[A]
20
150 °C
15
5
4
3
10
2
5
1
0
0
2
4
6
8
0
10
0
10
VGS[V]
20
30
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD
Avalancheenergy
Drain-sourcebreakdownvoltage
200
580
180
560
160
540
140
VBR(DSS)[V]
EAS[mJ]
120
100
80
60
520
500
480
40
460
20
0
0
25
50
75
100
125
150
175
440
-60
-20
Tj[°C]
60
100
140
180
Tj[°C]
EAS=f(Tj);ID=4A;VDD=50V
Final Data Sheet
20
VBR(DSS)=f(Tj);ID=1mA
8
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
Typ.capacitances
Typ.Cossstoredenergy
4
10
4.0
3.5
103
3.0
Ciss
Eoss[µJ]
C[pF]
2.5
102
Coss
2.0
1.5
101
1.0
Crss
0.5
100
0
100
200
300
400
500
0.0
0
VDS[V]
100
200
300
400
500
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Eoss=f(VDS)
Forwardcharacteristicsofreversediode
102
101
IF[A]
125 °C
25 °C
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
9
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
6PackageOutlines
*) mold flash not included
DIM
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
e1
N
H
L
L3
L4
F1
F2
F3
F4
F5
F6
MILLIMETERS
MIN
MAX
2.16
2.41
0.00
0.15
0.64
0.89
0.65
1.15
5.00
5.50
0.46
0.60
0.46
0.98
5.97
6.22
5.02
5.84
6.40
6.73
4.70
5.60
2.29 (BSC)
4.57 (BSC)
3
9.40
10.48
1.18
1.70
0.90
1.25
0.51
1.00
10.60
6.40
2.20
5.80
5.76
1.20
INCHES
MIN
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
0.370
0.046
0.035
0.020
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
0.090 (BSC)
0.180 (BSC)
3
0.413
0.067
0.049
0.039
0.417
0.252
0.087
0.228
0.227
0.047
DOCUMENT NO.
Z8B00003328
SCALE
0
2.0
0
2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
01-09-2015
REVISION
05
Figure1OutlinePG-TO252,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
12
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
RevisionHistory
IPD50R380CE
Revision:2016-06-13,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2012-08-24
Release of final version
2.1
2013-07-16
update to Halogen free mold compound
2.2
2015-11-17
Update to qualified for standard grade and updated package drawing
2.3
2016-06-13
Updated ID ratings, Zth, SOA and Pd curves
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PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
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TrademarksupdatedAugust2015
OtherTrademarks
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
13
Rev.2.3,2016-06-13
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