Fairchild GBU8K Bridge rectifier Datasheet

GBU8A - GBU8M
Bridge Rectifiers
Features
•
•
•
•
•
Glass passivated junction
Surge overload rating: 200 amperes peak
Reliable low cost construction utilizing molded plastic technique.
Ideal for printed circuit board.
UL certified with UL certificate #s E111753 and E326243.
+ ~
~
-
GBU
Absolute Maximum Ratings *
Symbol
TA = 25°C unless otherwise noted
Value
Parameter
8A
8B
8D
8G
8J
8K
8M
Units
VRRM
Maximum Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
VRMS
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage (Rated VR)
50
100
200
400
600
800
1000
V
VR
IF(AV)
Average Recitified Forward Current,
@ TA = 100°C
@ TA = 45°C
IFSM
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
TSTG
Storage Temperature Range
8.0
6.0
A
A
200
A
-55 to +150
°C
Operating Junction Temperature
-55 to +150
°C
TJ
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Value
Units
Power Dissipation
16
W
Thermal Resistance, Junction to Ambient, * per leg
18
°C/W
3
°C/W
Value
Units
Thermal Resistance, Junction to Case, * per leg
RθJC
* Device mounted on PCB with 0.5 × 0.5” (12 × 12mm).
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
VF
Forward Voltage, per element @ 8.0A
1.0
V
IR
Reverse Current, per element @ Rated VR
TA = 25°C
TA = 100°C
50
500
μA
μA
I2t Rating for Fusing
166
A2s
t < 8.35ms
© 2010 Fairchild Semiconductor Corporation
GBU8A - GBU8M Rev. A5
www.fairchildsemi.com
1
GBU8A - GBU8M — Bridge Rectifiers
February 2010
GBU8A - GBU8M — Bridge Rectifiers
100
8
HEAT-SINK
MOUNTING, TC
4"x4"x0.15"
COPPER PLATE
6
Forward Current, IF [A]
Average Rectified Forward Current, IF [A]
Typical Performance Characteristics
4
2
0
MOUNTED ON PC BOARD,
TA 0.5" (12.7mm) LEAD LENGTH
60Hz RESISTIVE OF INDUCTIVE LOAD
0
50
100
10
μs
Pulse Width = 300μ
1% Duty Cycle
0.8
0.9
1
1.1
1.2
Forward Voltage, V F [V]
1.3
1.4
Peak. Forward Surge Current, IFSM[A]
250
T C = 100 º C
Reverse Current, IR [mA]
TA = 25º C
1
0.1
0.7
150
Ambient Temperature [ºC]
1
0.1
0.01
10
TA = 25 º C
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Tj=150°C
8.3ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60Hz
Total Capacitance, CT [pF]
400
TA = 25º C
f = 1.0 MHz
Visg = 50m Vp-p
100
50
10
1
5
10
Reverse Voltage, VR [V]
© 2010 Fairchild Semiconductor Corporation
GBU8A - GBU8M Rev. A5
50
100
www.fairchildsemi.com
2
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I47
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www.fairchildsemi.com
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