Renesas HN85C256API85E 256k eeprom (32-kword ã 8-bit) Datasheet

Data Sheet
HN58C256AI Series
256k EEPROM (32-kword × 8-bit)
R10DS0218EJ0100
Rev.1.00
Oct 07, 2013
Description
Renesas Electronics' HN58C256AI are electrically erasable and programmable ROMs organized as 32768-word × 8-bit.
They have realized high speed low power consumption and high reliability by employing advanced MNOS memory
technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make
their write operations faster.
Features
• Single 5 V supply: 5 V ±10%
• Access time: 85 ns/100 ns (max)
• Power dissipation
⎯ Active: 20 mW/MHz, (typ)
⎯ Standby: 110 μW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (64 bytes): 10 ms max
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• There are lead free products
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 1 of 16
HN58C256AI Series
Ordering Information
Orderable Part Name
HN85C256API85E
HN85C256API10E
HN85C256AFPI85E
HN85C256AFPI10E
HN85C256AFPI85EZ
HN85C256AFPI10EZ
HN85C256ATI85E
HN85C256ATI10E
Access
time
85ns
100ns
85ns
100ns
85ns
100ns
85ns
100ns
Shipping
Container
Package
Quantity
600mil 28-pin plastic DIP
PRDP0028AB-A (DP-28V)
Tube
Max. 13 pcs/tube
Max. 325 pcs/inner box
400mil 28-pin plastic SOP
PRSP0028DC-A (FP-28DV)
Tube
Max. 25 pcs/tube
Max. 1,000 pcs/inner box
Tape and reel
28-pin plastic TSOP
PTSA0028ZB-A (TFP-28DBV)
Tray
1,000 pcs/reel
Max. 60 pcs/tray
Max. 600 pcs/inner box
Pin Arrangement
HN58C256API/AFPI Series
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
HN58C256ATI Series
A2
A1
A0
I/O0
I/O1
I/O2
VSS
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
15
16
17
18
19
20
21
22
23
24
25
26
27
28
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A3
A4
A5
A6
A7
A12
A14
VCC
WE
A13
A8
A9
A11
OE
(Top view)
(Top view)
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 2 of 16
HN58C256AI Series
Pin Description
Pin Name
Function
A0 to A14
I/O0 to I/O7
OE
CE
WE
VCC
VSS
NC
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground
No connection
Block Diagram
VCC
I/O0
to
I/O7
High voltage generator
VSS
I/O buffer
and
input latch
OE
CE
Control logic and timing
WE
A0
Y decoder
to
Y gating
A5
Address
buffer and
latch
X decoder
Memory array
A6
to
A14
Data latch
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 3 of 16
HN58C256AI Series
Operation Table
CE
Operation
Read
Standby
Write
Deselect
Write inhibit
VIL
VIH
VIL
VIL
×
×
VIL
×
Data polling
Program reset
Note:
OE
VIL
×*1
VIH
VIH
×
VIL
VIL
×
WE
VIH
×
VIL
VIH
VIH
×
VIH
×
I/O
Dout
High-Z
Din
High-Z
—
—
Dout (I/O7)
High-Z
1. Don’t care
Absolute Maximum Ratings
Parameter
Power supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*2
Storage temperature range
Symbol
Value
–0.6 to +7.0
–0.5*1 to +7.0*3
–40 to +85
–55 to +125
VCC
Vin
Topr
Tstg
Unit
V
V
°C
°C
Notes: 1. Vin min: –3.0 V for pulse width ≤ 50 ns
2. Including electrical characteristics and data retention
3. Should not exceed VCC + 1 V.
Recommended DC Operating Conditions
Parameter
Supply voltage
Input voltage
Operating temperature
Symbol
VCC
VSS
VIL
VIH
Topr
Min
4.5
0
–0.3*1
3.0
–40
Typ
5.0
0
—
—
—
Max
5.5
0
0.6
VCC + 0.3*2
+85
Unit
V
V
V
V
°C
Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns
2. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 4 of 16
HN58C256AI Series
DC Characteristics
(Ta = –40 to +85°C, VCC = 5.0 V ±10%)
Parameter
Input leakage current
Output leakage current
Standby VCC current
Operating VCC current
Output low voltage
Output high voltage
Symbol
ILI
ILO
ICC1
ICC2
ICC3
VOL
VOH
Min
—
—
—
—
—
Typ
—
—
—
—
—
Max
2
2
20
1
12
Unit
μA
μA
μA
mA
mA
Test conditions
VCC = 5.5 V, Vin = 5.5 V
VCC = 5.5 V, Vout = 5.5/0.4 V
CE = VCC
CE = VIH
—
—
30
mA
—
VCC × 0.8
—
—
0.4
—
V
V
Iout = 0 mA, Duty = 100%,
Cycle = 85 ns, VCC = 5.5 V
IOL = 2.1 mA
IOH = –400 μA
Min
—
Typ
—
Max
6
Unit
pF
—
—
12
pF
Iout = 0 mA, Duty = 100%,
Cycle = 1 μs, VCC = 5.5 V
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Input capacitance*1
Symbol
Cin
Output capacitance*1
Cout
Note:
Test conditions
Vin = 0 V
Vout = 0 V
1. This parameter is periodically sampled and not 100% tested.
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 5 of 16
HN58C256AI Series
AC Characteristics
(Ta = –40 to +85°C, VCC = 5.0 V ±10%)
Test Conditions
•
•
•
•
•
Input pulse levels: 0.4 V to 3.0 V
Input rise and fall time: ≤ 5 ns
Input timing reference levels: 0.8, 2.0 V
Output load: 1TTL Gate +100 pF
Output reference levels: 1.5 V, 1.5 V
Read Cycle
Parameter
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*1
Symbol
tACC
tCE
tOE
tOH
tDF
HN58C256API/AFPI/ATI
-85
-10
Min
Max
Min
Max
—
85
—
100
—
85
—
100
10
40
10
50
0
—
0
—
0
40
0
40
Unit
ns
ns
ns
ns
ns
Test conditions
CE = OE = VIL, WE = VIH
OE = VIL, WE = VIH
CE = VIL, WE = VIH
CE = OE = VIL, WE = VIH
CE = VIL, WE = VIH
Write Cycle
Parameter
Address setup time
Address hold time
CE to write setup time (WE controlled)
CE hold time (WE controlled)
WE to write setup time (CE controlled)
WE hold time (CE controlled)
OE to write setup time
OE hold time
Data setup time
Data hold time
WE pulse width (WE controlled)
CE pulse width (CE controlled)
Data latch time
Byte load cycle
Byte load window
Write cycle time
Time to device busy
Write start time
Symbol
tAS
tAH
tCS
tCH
tWS
tWH
tOES
tOEH
tDS
tDH
tWP
tCW
tDL
tBLC
tBL
tWC
tDB
tDW
Min*2
0
50
0
0
0
0
0
0
50
0
100
100
50
0.2
100
—
120
0*4
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
30
—
10*3
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
ms
ns
ns
Test conditions
Notes: 1. tDF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and are no longer
driven.
2. Use this device in longer cycle than this value.
3. tWC must be longer than this value unless polling techniques are used. This device automatically completes
the internal write operation within this value.
4. Next read or write operation can be initiated after tDW if polling techniques are used.
5. A6 through A14 are page address and these addresses are latched at the first falling edge of WE.
6. A6 through A14 are page address and these addresses are latched at the first falling edge of CE.
7. See AC read characteristics.
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 6 of 16
HN58C256AI Series
Timing Waveforms
Read Timing Waveform
Address
tACC
CE
tOH
tCE
OE
tDF
tOE
WE
Data Out
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
High
Data out valid
Page 7 of 16
HN58C256AI Series
Byte Write Timing Waveform (1) (WE Controlled)
tWC
Address
tCS
tAH
tCH
CE
tAS
tBL
tWP
WE
tOES
tOEH
OE
tDS
tDH
Din
VCC
Byte Write Timing Waveform (2) (CE Controlled)
Address
tWS
tAH
tBL
tWC
tCW
CE
tAS
tWH
WE
tOES
tOEH
OE
tDS
tDH
Din
VCC
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 8 of 16
HN58C256AI Series
Page Write Timing Waveform (1) (WE Controlled)
*7
Address
A0 to A14
tAS
tAH
tBL
tWP
WE
tDL
tCS
tBLC
tWC
tCH
CE
tOEH
tOES
tDH
OE
tDS
Din
VCC
Page Write Timing Waveform (2) (CE Controlled)
*8
Address
A0 to A14
tAS
CE
tAH
tBL
tCW
tDL
tWS
tBLC
tWC
tWH
WE
tOEH
tOES
OE
tDH
tDS
Din
VCC
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 9 of 16
HN58C256AI Series
Data Polling Timing Waveform
Address
An
An
An
CE
WE
tOEH
tCE *9
tOES
OE
tDW
tOE*9
Dout X
Din X
I/O7
Dout X
tWC
Toggle bit
This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode
during the internal programming cycle, I/O6 will charge from "1" to "0" (toggling) for each read. When the internal
programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program.
Toggle bit Waveform
Notes: 1.
2.
3.
4.
I/O6 beginning state is "1".
I/O6 ending state will vary.
See AC read characteristics.
Any address location can be used, but the address must be fixed.
Next mode
*4
Address
tCE *3
CE
WE
*3
tOE
OE
tOES
tOEH
*1
I/O6
Din
Dout
Dout
tWC
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
*2
*2
Dout
Dout
tDW
Page 10 of 16
HN58C256AI Series
Software Data Protection Timing Waveform (1) (in protection mode)
VCC
CE
WE
tBLC
Address
Data
5555
AA
2AAA
55
5555
A0
tWC
Write address
Write data
Software Data Protection Timing Waveform (2) (in non-protection mode)
VCC
tWC
Normal active
mode
CE
WE
Address
Data
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
5555 2AAA 5555 5555 2AAA 5555
AA
55
80
AA 55
20
Page 11 of 16
HN58C256AI Series
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write cycle. Following
the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each additional byte load cycle
must be started within 30 μs from the preceding falling edge of WE or CE. When CE or WE is high for 100 μs after
data input, the EEPROM enters write mode automatically and the input data are written into the EEPROM.
Data Polling
Data polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the EEPROM is performing a write
operation.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 105 cycles in case of the page programming and 104 cycles in case of the byte programming (1%
cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 104
cycles.
Data Protection
To prevent this phenomenon, this device has a noise cancelation function that cuts noise if its width is 20 ns or less.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming
mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the control pins.
WE
CE
VIH
0V
VIH
OE
0V
20 ns max
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 12 of 16
HN58C256AI Series
2. Data Protection at VCC On/Off
When VCC is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act as a trigger
and turn the EEPROM to program mode by mistake. To prevent this unintentional programming, the EEPROM
must be kept in an unprogrammable state while the CPU is in an unstable state.
Note: The EEPROM shoud be kept in unprogrammable state during VCC on/off by using CPU RESET signal.
VCC
CPU
RESET
* Unprogrammable
* Unprogrammable
2.1 Protection by CE, OE, WE
To realize the unprogrammable state, the input level of control pins must be held as shown in the table below.
CE
VCC
OE
WE
×
×
×
VSS
×
×
×
VCC
×: Don’t care
VCC: Pull-up to VCC level
VSS: Pull-down to VSS level
3. Software data protection
To prevent unintentional programming, this device has the software data protection (SDP) mode. The SDP is
enabled by inputting the following 3 bytes code and write data. SDP is not enabled if only the 3 bytes code is input.
To program data in the SDP enable mode, 3 bytes code must be input before write data.
Address
Data
5555
AA
↓
↓
2AAA
55
↓
↓
5555
A0
↓
↓
Write address Write data } Normal data input
The SDP mode is disabled by inputting the following 6 bytes code. Note that, if data is input in the SDP disable
cycle, data can not be written.
Address
Data
5555
↓
2AAA
↓
5555
↓
5555
↓
2AAA
↓
5555
AA
↓
55
↓
80
↓
AA
↓
55
↓
20
The software data protection is not enabled at the shipment.
Note: There are some differences between Renesas Electronics' and other company’s for enable/disable sequence of
software data protection. If there are any questions, please contact with Renesas Electronics' sales offices.
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 13 of 16
HN58C256AI Series
Package Dimensions
HN58C256API Series (PRDP0028AB-A / Previous Code: DP-28V)
JEITA Package Code
P-DIP28-13.4x35.6-2.54
RENESAS Code
PRDP0028AB-A
Previous Code
DP-28/DP-28V
MASS[Typ.]
4.6g
D
15
E
28
1
14
b3
A
Reference
Symbol
L
A1
Z
e
bp
θ
c
e1
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
e1
D
E
A
A1
bp
b3
c
θ
e
Z
L
Dimension in Millimeters
Min
Nom Max
15.24
35.6 36.5
13.4 14.6
5.70
0.51
0.38 0.48 0.58
1.2
0.20 0.25 0.36
0°
15°
2.29 2.54 2.79
1.9
2.54
Page 14 of 16
HN58C256AI Series
HN58C256AFPI Series (PRSP0028DC-A / Previous Code: FP-28DV)
JEITA Package Code
P-SOP28-8.4x18.3-1.27
RENESAS Code
PRSP0028DC-A
Previous Code
FP-28D
MASS[Typ.]
0.7g
D
F
28
NOTE)
1. DIMENSION"*1"
DOES NOT INCLUDE MOLD FLASH.
2. DIMENSION"*2"DOES NOT
INCLUDE TRIM OFFSET.
15
bp
c
c1
HE
*1
E
b1
Index mark
Terminal cross section
1
Reference
Symbol
14
e
*2
bp
x
M
L1
A
Z
A1
q
y
L
Detail F
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
D
E
A2
A1
A
bp
b1
c
c1
θ
HE
e
x
y
Z
L
L1
Dimension in Millimeters
Min
Nom Max
18.3 18.8
8.4
0.10 0.20 0.30
2.50
0.32 0.40 0.48
0.38
0.12 0.17 0.22
0.15
0°
8°
11.5 11.8 12.1
1.27
0.20
0.15
1.12
0.8 1.0 1.2
1.7
Page 15 of 16
HN58C256AI Series
HN58C256ATI Series (PTSA0028ZB-A / Previous Code: TFP-28DBV)
JEITA Package Code
P-TSOP(1)28-8x11.8-0.55
RENESAS Code
PTSA0028ZB-A
Previous Code
TFP-28DB/TFP-28DBV
MASS[Typ.]
0.23g
y
NOTE)
1. DIMENSION"*1"AND"*2(Nom)"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
HD
D
28
bp
*3
1
bp
x
Index mark
A
M
*1
15
Terminal cross section
Z
14
c
c1
e
*2
E
b1
Reference Dimension in Millimeters
Symbol
F
L1
q
A1
L
Detail F
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
D
E
A2
A1
A
bp
b1
c
c1
θ
HD
e
x
y
Z
L
L1
Min
Nom Max
11.80
8.00 8.20
0.05
0.13
0.14
0.22
0.20
0.17
0.15
0.12
0.20
1.20
0.30
0.22
0°
5°
13.10 13.40 13.70
0.55
0.10
0.10
0.45
0.40 0.50 0.60
0.80
Page 16 of 16
Revision History
HN58C256AI Series Data Sheet
Description
Rev.
Rev.1.00
Date
Oct 07, 2013
Page
—
Summary
Initial issue
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C-1
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11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
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