Order this document by TPV596A/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470– 860 MHz) • 0.5 W — Pref @ – 58 dB IMD • High Gain — 12 dB Typ, Class A, f = 860 MHz 0.5 W, 470 – 860 MHz UHF LINEAR POWER TRANSISTOR • Gold Metallization for Reliability MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 24 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC 0.7 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 8.75 0.05 Watts W/°C Operating Junction Temperature TJ 200 °C Tstg – 65 to + 200 °C Storage Temperature Range CASE 244–04, STYLE 1 (.280 SOE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (TC = 70°C) Symbol Max Unit RθJC 20 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V(BR)CEO 24 — — Vdc Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0) V(BR)CBO 45 — — Vdc Emitter–Base Breakdown Voltage (IE = 4.0 mA, IC = 0) V(BR)EBO 3.5 — — Vdc Emitter–Base Leakage Current (VEB = 2.0 V) IEBO — — 0.25 mA Collector Cutoff Current (VCB = 28 V, IE = 0) ICBO — — 1.0 mAdc V(BR)CER 50 — — Vdc hFE 15 — 120 — Cob — — 5.0 pF OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mA, RBE = 10 Ω) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) (continued) RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 TPV596A 1 ELECTRICAL CHARACTERISTICS — continued Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCE = 20 V, Pout = 0.5 W, f = 860 MHz, IE = 0.22 A) GPE 11.5 12 — dB Load Mismatch (VCE = 20 V, Pout = 1.0 W, IE = 0.22 A, f = 860 MHz, Load VSWR = ∞:1, All Phase Angles) ψ Intermodulation Distortion, 3 Tone (f = 860 MHz, VCE = 20 V, IE = 0.22 A, Pref = 1.0 W, Vision Carrier = – 8.0 dB, Sound Carrier = –7.0 dB, Sideband Signal = –16 dB, Specification TV05001) IMD1 — — – 50 dB Intermodulation Distortion (IDEM) (f = 860 MHz, VCE = 20 V, IE = 0.22 A, Pref = 0.5 W, Vision Carrier = – 8.0 dB, Sound Carrier = –10 dB, Sideband Signal = –16 dB) IMD2 — – 60 – 58 dB FUNCTIONAL TESTS No Degradation in Output Power ā ā TYPICAL CHARACTERISTICS 3 Pout , OUTPUT POWER (WATTS) 0 0.2 IDEAL 0.4 2.5 0.8 f = 1 GHz0.4 0.2 Zin 0.4 REAL 0.6 2 f = 1 GHz 0.8 ZOL* 0.8 1 0.6 0.4 1.5 1 f = 860 MHz VCE = 20 V IC = 220 mA 0.2 0.6 0.1 0.6 0.8 1 0.6 0.4 0.8 Zo = 50 Ω 1 1.5 2 1.5 0.5 1.5 3 4 5 2 2 10 3 0 20 40 60 80 100 120 3 4 140 5 10 0 10 5 4 Pin, INPUT POWER (mW) Figure 1. Power Output versus Power Input Figure 2. Large Signal Impedances VCE = 20 V — IC = 220 mA ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. 1 IC, COLLECTOR CURRENT (A) MTTF FACTOR (10 6 HRS x AMP2 ) 8 0.1 0.01 NOTE: DIVIDE MTTF BY IC2 TO NOTE: OBTAIN METAL LIFE THEATSINK = 70°C 6 4 2 0.001 80 TPV596A 2 100 120 140 160 180 200 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 3. MTTF Factor versus Junction Temperature Figure 4. DC Safe Operating Area 24 MOTOROLA RF DEVICE DATA VCE C 30 Ω VBIAS C C C L 8% λ g L 3% λ g OUT 50 Ω IN 50 Ω 50 OHM 220 pF 50 OHM 220 pF 50 Ω 15 λg 0.8 – 10 pF 0.8 – 10 pF NOTE: lg is the wave length in the microstrip circuit Figure 5. 860 MHz Test Circuit VSUPPLY = 20 – 25 V R4 VCE R1 C — 100 F + 10 nF + 1.0 nF R1 — 1.0 kohm R2 — 330 ohm R3 — 4.7 kohm R4 — 10 ohm 1/2 W R5 — 50 ohm 1N4007 C R2 2N2904 R3 R5 VBIAS Figure 6. Class A Bias Circuit MOTOROLA RF DEVICE DATA TPV596A 3 PACKAGE DIMENSIONS 2 3 D 1 4 DIM A B C D E G J K M P S T U K M T F A J SEATING PLANE U P S C STYLE 1: PIN 1. 2. 3. 4. 8–32 NC 2A WRENCH FLAT E MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 14.99 16.51 5.46 5.96 1.40 1.65 1.52 ––– 0.08 0.17 11.05 ––– 45_NOM ––– 1.27 3.00 3.25 1.40 1.77 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.590 0.650 0.215 0.235 0.055 0.065 0.060 ––– 0.003 0.007 0.435 ––– 45 _NOM ––– 0.050 0.118 0.128 0.055 0.070 0.115 0.145 EMITTER BASE EMITTER COLLECTOR B CASE 244–04 ISSUE J Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 TPV596A 4 ◊ *TPV596A/D* TPV596A/D MOTOROLA RF DEVICE DATA