Microsemi MXP1126-C Photo transistor chip Datasheet

2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
MXP1126-C
Photo Transistor Chip
Features
•
•
•
•
•
Light Activated Photo Transistor Chip
Planar NPN
Aluminum Wire bondable
Backside Metallization - Gold
Die Attach methods: Eutectic or Epoxy
Electrical Characteristics @ 25oC
SYMB OL
CHARACT ERIST IC
CONDIT IONS
MIN
T YP
MAX
UNIT S
BVCEO
Collector-Emitter Voltage
IC = 100 µA
500
Volts
BVEBO
Emitter-Base Voltage
IE = 100 µA
20
Volts
BVCBO
Collector-Base Voltage
IC = 100 µA
500
Volts
ID
Collector Current
VCE = 10 Volts
30
nAmps
hFE
Beta
VCE = 5 Volts, IC = 1 mA
25
Data Sheet # MSC1341.PDF
Updated:October 1998
O p t o Pro d u c t s
Similar pages