DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and PART NUMBER PACKAGE 2SK3114 Isolated TO-220 designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★ • Low on-state resistance: (Isolated TO-220) RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±4.0 A ID(pulse) ±16 A Total Power Dissipation (TC = 25°C) PT1 30 W Total Power Dissipation (TA = 25°C) PT2 2.0 W Channel Temperature Tch 150 °C Tstg –55 to +150 °C Drain Current (pulse) Note1 Storage Temperature Note2 IAS 4.0 A Single Avalanche Energy Note2 EAS 10.7 mJ Single Avalanche Current Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13337EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998 2SK3114 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 2.0 A 1.0 RDS(on) Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 50 S Ω VGS = 10 V, ID = 2.0 A 1.6 Input Capacitance Ciss VDS = 10 V 550 pF Output Capacitance Coss VGS = 0 V 115 pF Reverse Transfer Capacitance Crss f = 1 MHz 13 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 2.0 A 12 ns VGS(on) = 10 V 6 ns td(off) RG = 10 Ω 35 ns tf RL = 10 Ω 12 ns Rise Time tr Turn-off Delay Time Fall Time 2.2 Total Gate Charge QG VDD = 450 V 15 nC Gate to Source Charge QGS VGS = 10 V 4 nC Gate to Drain Charge QGD ID = 4.0 A 4.4 nC VF(S-D) IF = 4.0 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 4.0 A, VGS = 0 V 1.3 µs Reverse Recovery Charge Qrr di/dt = 50 A/µs 4.3 µC Body Diode Forward Voltage TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS(on) 10% Data Sheet D13337EJ2V0DS tr td(off) td(on) ton tf toff 2SK3114 TYPICAL CHARACTERISTICS (TA = 25°C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 30 20 10 160 0 Tch - Channel Temperature - ˚C 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 10 d ite Lim ID(DC) ) n (o RD Po we r 1 0.1 1 TC = 25˚C Single Pulse ID(pulse) PW =1 0m s 10 0m s 1m s 3 Di 1 m ss 10 0 m s ipa 0m s tio s n Lim ite d 10 100 1 000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 100 Rth(CH-A) = 62.5 ˚C/W 100 10 Rth(CH-C) = 4.17 ˚C/W 1 0.1 0.01 10m Single Pulse 100m 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s Data Sheet D13337EJ2V0DS 3 2SK3114 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 8V VDS = 10V Pulsed 100 VGS = 10 V 6V ID - Drain Current - A ID - Drain Current - A 10 FORWARD TRANSFER CHARACTERISTICS 5 Tch = 125 ˚C 75 ˚C 10 1.0 25 ˚C -25 ˚C 0.1 0 10 20 30 40 0 5 VDS - Drain to Source Voltage - V 5.0 VDS = 10 V ID = 1 mA 4.0 3.0 2.0 1.0 0 50 100 150 10 Tch = -25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 VDS = 10 V Pulsed 0.1 0.1 Pulsed ID = 4.0 A 2.0 A 1.0 0 0 5 10 15 Pulsed 3.0 VGS = 10 V VGS = 20 V 2.0 1.0 0 1.0 10 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0 1.0 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - W RDS (on) - Drain to Source On-State Resistance - W Tch - Channel Temperature - ˚C 3.0 15 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 0 -50 10 VGS - Gate to Source Voltage - V Data Sheet D13337EJ2V0DS 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 ID = 4.0 A 2.0 A 3.0 2.0 1.0 VGS = 10 V 100 10 1.0 0.1 Pulsed 50 0 150 100 0 Tch - Channel Temperature - ˚C td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHZ Ciss 100 Coss 10 Crss 1 10 td(off) tf 10 td(on) tr 1 VDD = 150 V VGS = 10 V RG = 10 W 0.1 0.1 100 1 REVERSE RECOVERY TIME vs. DRAIN CURRENT VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 50 A/mS VGS = 0 V 1 000 100 10 0.01 0.1 1 10 ID - Drain Current - A VDS - Drain to Source Voltage - V 10 000 Pulsed 1.5 1.0 100 1 000 1 0.1 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 0V VGS = 10 V 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 4 A 14 600 VDD = 450 V 300 V 150 V 12 10 400 VGS 8 6 200 4 VDS 0 4 2 8 12 VGS - Gate to Source Voltage - V 0 -50 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS (on) - Drain to Source On-State Resistance - W 2SK3114 0 16 Qg - Gate Charge - nC ID - Drain Current - A Data Sheet D13337EJ2V0DS 5 2SK3114 120 Energy Derating Factor - % 100 IAS - Single Avalanche Current - A SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 10 IAS = 4 A 1.0 EAS =1 0.7 mJ RG = 25 W VDD = 150 V VGS = 20 ® 0 V Starting Tch = 25˚C 0.1 10m 100m 1m VDD = 150 V RG = 25 W VGS = 20 ® 0 V IAS £ 4 A 100 80 60 40 20 10m 0 25 L - Inductive Load - H 50 PACKAGE DRAWINGS (Unit: mm) 0.7±0.1 2.54 TYP. 125 150 Drain 4.5±0.2 2.7±0.2 Gate Protection Diode 12.0±0.2 Body Diode Gate Source 13.5 MIN. 4±0.2 3±0.1 15.0±0.3 φ 3.2±0.2 100 EQUIVALENT CIRCUIT Isolated TO-220 (MP-45F) 10.0±0.3 75 Starting Tch - Starting Channel Temperature - ˚C 1.3±0.2 1.5±0.2 2.54 TYP. 2.5±0.1 0.65±0.1 1.Gate 2.Drain 3.Source 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D13337EJ2V0DS 2SK3114 [MEMO] Data Sheet D13337EJ2V0DS 7 2SK3114 • The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4