Diode Semiconductor Korea ES3H - - - ES3J VOLTAGE RANGE: 500 --- 600 V CURRENT: 3.0 A SURFACE MOUNT RECTIFIERS FEATURES SMC Low cost Low leakage 6.9± 0.25 3.1± 0.25 5. 9 ± 0. 25 Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents 7.8± 0. 2 2. 3 ± 0. 15 The plastic material carries U/L recognition 94V-0 Case:JEDEC DO-214AB(SMC),molded plastic Terminals: Solderable per 1. 3± 0. 25 MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.21 grams 0.25± 0.06 0.203MAX MECHANICAL DATA Dimensions in millimeters Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES3H ES3J UNITS Maximum recurrent peak reverse voltage VRRM 500 600 V Maximum RMS voltage VRMS 350 420 V Maximum DC blocking voltage VDC 500 600 V Maximum average forward rectified current @TA=100 IF(AV) 3.0 A IFSM 100 A VF 1.70 V Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125 Maximum instantaneous forward voltage at 3.0 A Maximum reverse current at rated DC blocking voltage Typical reverse recovery time @TA=25 @TA=125 (Note1) IR 10 trr 35 ns pF Typical junction capacitance (Note2) CJ 45 Typical thermal resistance (Note3) RθJA 25 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A. A 500 /W www.diode.kr 2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas Diode Semiconductor Korea ES3H - - - ES3J FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 10 N 1. 50 N 1. trr +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 20/30 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 1.0 0.1 TJ=25 0.01 Pulse width=300 s 1% Duty Cycle 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 10 3.0 AMPERES INSTANTANEOUS FORWARD CURRENT NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . 3.0 1.5 Single Phase Half Wave 60HZ Resistive or Inductive Load 0 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 40 TJ=25 20 10 0.1 0.2 0.4 1 2 4 10 20 40 REVERSE VOLTAGE,VOLTS 100 75 100 125 150 175 100 8.3ms Single Half Sine-Wave 80 AMPERES 200 100 60 50 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 400 25 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 2000 1000 600 z 60 40 20 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz www.diode.kr