, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 — Signal Transistor* 2N5305,6, 6A, GES5305,6, 6A Silicon Darlington Transistors TO-92 TO-98 MAXIMUM RATINGS, Absoluts-Maximum Values: COLLECTORTO EMITTER VOLTAGE (VCEO) EMITTER TO BASE VOLTAGE (VEBO) COLLECTOR TO BASE VOLTAGE (VOBO) CONTINUOUS COLLECTOR CURRENT (Ic) COLLECTOR CURRENT (PULSED)" (lc) CONTINUOUS BASE CURRENT (IB) TOTAL POWER DISSIPATION (TA s S5°C)(PT) DERATE FACTOR (TA 5- 2S°C) OPERATING TEMPERATURE(Tj) STORAGE TEMPERATURE (TSTG) LEAD TEMPERATURE, 1/16" ± «32" (1.58mm 10.8mm) from case lor 10S max (TJ 25V 12V 25V 300mA 500 mA 50mA 400mW 4 mW/'C -65° to + 125«C -65° to + 150°C •Pulsed Conditions: Pulse width 3 300 )is. Duty factor £ 2%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Signal Transistors 2N5305,6, 6A, GES5305, 6, 6A ELECTRICAL CHARACTERISTICS, At Ambient Temperature <TA) = 26°C Unless Otherwise Specified LIMITS CHARACTERISTICS Colleclor-To-Emltier Breakdown Voltage (l c = 10mA, IB- 0) Collector-To-Base Breakdown Voltage <|C = 0.1HA.IE = 0) Emitter-To-Base Breakdown Voltage de - 0>A, lc - 0) DC Forward Current Transfer Ratio (|n > 2mA, VCE . 5V) 2NS305, QES6305 (lc - 100mA, VCE . 5V) 2NS305, GES5305 (lc - 2 mA, VCE . 5V) 2NB308, GES5306A (I,: - 100mA. VCE - 5V) 2N5306. GES5306A Collector-To-Emltter Saturation Voltage (lc - 200mA, IB - 0.2mA) Base-To-Emitter Saturation Voltage (lc - 200mA. IB - 0.2mA) Bste-To-Emitler Voltage (lc - 200mA, VCE • 6V) Colleclor-To-Base Cutoff Current <V CB -25V,l e = 0) (VOB = ?5V,IE = 0,TA.100«)C) Small-Signal Current Transfer Ratio (VcE ' 5V> >C « ZmA. ' • ' KHZ) 2N5306, GES5305 (VCE - 5V, lc = 2mA. f = 1 KHZ) 2N6306, 6A, GES5306, 6A (VCE " 5V'!C - 2mA - ( " 10 MHZ) Input Capacitance (VFB - 0.6V, f - 1 MHZ) Output Capacitance (VCB = 10V, 1 = 1 MHZ) Input Impedance (VCE - SV. lc . 2mA, f = 1KHz) Gain-Bandwidth Product (VCE • 5V> 'c • 2mA. 1 " 10MHz) Nolce Figure (VCE - 5V> 'c = 0-«m A, Rg = 160 kO, 1= 10 Hz, to 10 kHz, Bandwidth - 15 7kHz)2NW06A.GES5306A TERMINAL CONNECTIONS TO-92 Package Lead 1 - Emitter Lead 2•Bate Lead 3 • Collector SYMBOL MIN. MAX. BVCEO 25 _ BVcao 25 BVEBO 12 _ 2,000 6,000 7,000 20,000 20,000 riFE VCE(««i) VBE(sai) VBE — - 70,000 1.* _ 1.6 100 - 20 If. 2.000 7.000 - IMI.I 15.6 - C.b Ccb - V 1.6 _ ICBO V - _ _ UNITS 10.S Typical 7.6 Typical 10 650 Typical nA fA dB Pf KO IT 60 _ MHZ en 195 Typical 230 nVVHz TERMINAL CONNECTIONS TO-98 Package Lead 1 - Emitter Lead 2 - Collector Lead 3 - Bate