NXP BFT25A Npn 5 ghz wideband transistor Datasheet

BFT25A
NPN 5 GHz wideband transistor
Rev. 04 — 6 July 2004
Product data sheet
1. Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to 2 GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features
■ Low current consumption (100 µA to 1 mA)
■ Low noise figure
■ Gold metallization ensures excellent reliability.
1.3 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCBO
collector-base
voltage
open emitter
-
-
8
V
VCEO
collector-emitter
voltage
open base
-
-
5
V
IC
DC collector
current
-
-
6.5
mA
Ptot
total power
dissipation
-
-
32
mW
up to Ts = 165 °C
[1]
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
fT
transition
frequency
IC = 1 mA; VCE = 1 V;
Tamb = 25 °C;
f = 500 MHz
3.5
5
-
GHz
GUM
maximum
unilateral power
gain
IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C;
f = 1 GHz
-
15
-
dB
F
noise figure
Γ = Γopt; IC = 0.5 mA;
VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
-
1.8
-
dB
Γ = Γopt; IC = 1 mA;
VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
-
2
-
dB
[1]
Ts is the temperature at the soldering point of the collector tab.
BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
2. Pinning information
Table 2:
Discrete pinning
Pin
Description
Simplified outline
Symbol
Code: V10
1
base
2
emitter
3
collector
3
3
1
2
1
2
sym021
SOT23
3. Ordering information
Table 3:
Ordering information
Type number
BFT25A
Package
Name
Description
Version
-
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4:
Marking
Type number
Marking code [1]
BFT25A
34*
[1]
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
8
V
VCEO
collector-emitter voltage
open base
-
5
V
VEBO
emitter-base voltage
open collector
-
2
V
IC
DC collector current
-
6.5
mA
up to Ts = 165 °C
Ptot
total power dissipation
-
32
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
175
°C
[1]
Ts is the temperature at the soldering point of the collector tab.
9397 750 13399
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 04 — 6 July 2004
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BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-s)
[1]
Thermal characteristics
Parameter
Conditions
[1]
from junction to soldering point
Typ
Unit
260
K/W
Ts is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector cut-off
current
IE = 0 A; VCB = 5 V
-
-
50
nA
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
fT
transition
frequency
IC = 1 mA; VCE = 1 V;
Tamb = 25 °C;
f = 500 MHz
3.5
5
-
GHz
Cre
feedback
capacitance
IC = ic = 0 A; VCB = 1 V;
f = 1 MHz
-
0.3
0.45
pF
GUM
maximum
unilateral power
gain
IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
-
15
-
dB
F
noise figure
Γ = Γopt; IC = 0.5 mA;
VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
-
1.8
-
dB
Γ = Γopt; IC = 1 mA;
VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
-
2
-
dB
[1]
[1]
GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log ------------------------------------------------------dB
2
2
( 1 – S 11 ) ( 1 – S 22 )
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Product data sheet
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Rev. 04 — 6 July 2004
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BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
mbg247
40
mcd138
100
Ptot
(mW)
hFE
80
30
60
20
40
10
20
0
0
50
100
150
200
0
10−3
10−2
10−1
10
1
I C (mA)
Ts (°C)
VCE = 1 V.
Fig 1. Power derating curve.
Fig 2. DC current gain as a function of collector
current.
mcd103
0.4
Cre
(pF)
mcd140
6
fT
(GHz)
0.3
4
0.2
2
0.1
0
0
1
2
3
4
5
0
VCB (V)
IC = ic = 0 A; f = 1 MHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
0
1
2
3
I C (mA)
4
VCE = 1 V; Tamb = 25 °C; f = 500 MHz.
Fig 4. Transition frequency as a function of collector
current.
Figure 5, 6, 7 and 8, GUM = maximum unilateral power gain; MSG = maximum stable gain.
9397 750 13399
Product data sheet
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Rev. 04 — 6 July 2004
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BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
mcd104
25
gain
(dB)
mcd105
20
GUM
gain
(dB)
20
GUM
15
15
MSG
10
MSG
10
5
5
0
0
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
I C (mA)
2.0
I C (mA)
VCE = 1 V; f = 500 MHz.
VCE = 1 V; f = 1 GHz.
Fig 5. Gain as a function of collector current.
Fig 6. Gain as a function of collector current.
mcd106
50
mcd107
50
gain
(dB)
gain
(dB)
40
40
GUM
30
GUM
30
MSG
20
MSG
20
10
10
Gmax
0
10
102
103
f (MHz)
VCE = 1 V; IC = 0.5 mA.
Fig 7. Gain as a function of frequency.
Gmax
104
0
10
103
f (MHz)
104
VCE = 1 V; IC = 1 mA.
Fig 8. Gain as a function of frequency.
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Rev. 04 — 6 July 2004
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BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
mcd145
4
F
(dB)
F
(dB)
f=
2 GHz
3
mcd146
4
IC =
2 mA
3
1 GHz
1 mA
500 MHz
2
2
1
1
0
10−1
1
0
102
10
IC (mA)
0.5 mA
VCE = 1 V.
103
f (MHz)
104
VCE = 1 V.
Fig 9. Minimum noise figure as a function of collector
current.
Fig 10. Minimum noise figure as a function of
frequency.
1
0.5
2
pot. unst.
region
6 dB
0.2
4 dB
5
2.5 dB
10
+j
0.2
0
−j
0.5
1
2
5
stability
circle
∞
10
MSG
10
14.5 dB
5
13 dB
0.2
Γopt
Fmin = 1.9 dB
11 dB
2
0.5
1
mcd108
See Table 8;
Zo = 50 Ω.
Average gain parameter: MSG = 14.5 dB.
Fig 11. Noise circle figure.
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Product data sheet
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BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
Table 8:
f (MHz)
500
Noise parameters
VCE (V)
1
IC (mA)
Fmin (dB)
1
1.9
Γopt
Rn/50
(mag)
(ang)
0.79
4
2.5
1
0.5
2
pot. unst.
region
stability
circle
8 dB
0.2
4 dB
5
3 dB
10
+j
0.2
0
−j
0.5
MSG
11.2 dB
1
2
5
∞
10
10
Γopt
Fmin = 2 dB
10 dB
5
0.2
8 dB
2
0.5
mcd109
1
See Table 9;
Zo = 50 Ω.
Average gain parameter: MSG = 11.2 dB.
Fig 12. Noise circle figure.
Table 9:
f (MHz)
1000
Noise parameters
VCE (V)
1
IC (mA)
1
Fmin (dB)
2
9397 750 13399
Product data sheet
Γopt
Rn/50
(mag)
(ang)
0.74
8
2.6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 04 — 6 July 2004
7 of 14
BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
pot. unst.
region
stability
circle
1
0.5
2
MSG
7.7 dB
Γopt
0.2
7 dB
5
Fmin = 2.4 dB
+j
10
3 dB
0.2
0
−j
1
0.5
2
5 dB
5
∞
10
4 dB
10
6 dB
0.2
5
2
0.5
mcd110
1
See Table 10;
Zo = 50 Ω.
Average gain parameter: MSG = 7.7 dB.
Fig 13. Noise circle figure.
Table 10:
f (MHz)
2000
Noise parameters
VCE (V)
1
IC (mA)
1
Fmin (dB)
2.4
9397 750 13399
Product data sheet
Γopt
Rn/50
(mag)
(ang)
0.72
26
1.7
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 04 — 6 July 2004
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BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
1
0.5
2
0.2
5
10
+j
0.2
0
1
0.5
2
−j
∞
5 10
40 MHz
3 GHz
10
5
0.2
2
0.5
mcd111
1
VCE = 1 V; IC = 1 mA.
Zo = 50 Ω.
Fig 14. Common emitter input reflection coefficient (S11).
90°
135°
45°
3 GHz
180°
40 MHz
5
4
3
2
1
0°
0
−135°
−45°
−90°
mcd112
VCE = 1 V; IC = 1 mA.
Fig 15. Common emitter forward transmission coefficient (S21).
9397 750 13399
Product data sheet
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Rev. 04 — 6 July 2004
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BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
90°
135°
45°
3 GHz
180°
40 MHz
0.5
0.4
0.3
0.2
0.1
0°
0
−135°
−45°
−90°
mcd114
VCE = 1 V; IC = 1 mA.
Fig 16. Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+j
0.2
0
0.5
1
2
5
∞
10
40 MHz
−j
10
3 GHz
0.2
5
2
0.5
1
mcd113
VCE = 1 V; IC = 1 mA.
Zo = 50 Ω.
Fig 17. Common emitter output reflection coefficient (S22).
9397 750 13399
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 04 — 6 July 2004
10 of 14
BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
8. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
Fig 18. Package outline.
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Product data sheet
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Rev. 04 — 6 July 2004
11 of 14
BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
9. Revision history
Table 11:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
BFT25A_4
20040706
product data sheet
-
9397 750 13399
BFT25A_CNV_3
Modifications:
BFT25A_CNV_3
•
•
Converted from Lotus Manuscript format to TDM format.
Marking code added.
19971205
product specification
-
9397 750 13399
Product data sheet
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 04 — 6 July 2004
12 of 14
BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
10. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 13399
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 04 — 6 July 2004
13 of 14
BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
9
10
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13
Contact information . . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 6 July 2004
Document order number: 9397 750 13399
Published in The Netherlands
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