FDW254P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). • –9.2 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V RDS(ON) = 15 mΩ @ VGS = –2.5 V RDS(ON) = 21.5 mΩ @ VGS = –1.8 V • Rds ratings for use with 1.8 V logic Applications • Low gate charge • Load switch • High performance trench technology for extremely low RDS(ON) • Motor drive • DC/DC conversion • Power management • Low profile TSSOP-8 package D S S D G S S D TSSOP-8 5 4 6 3 7 2 8 1 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings –20 Units VDSS Parameter VGSS Gate-Source Voltage ID Drain Current ±8 (Note 1) –9.2 –50 A (Note 1a) 1.3 W (Note 1b) 0.6 – Continuous – Pulsed PD Power Dissipation TJ, TSTG V V –55 to +150 °C (Note 1a) 96 °C/W (Note 1b) 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 254P FDW254P 13’’ 12mm 3000 units 2001 Fairchild Semiconductor Corporation FDW254P Rev D (W) FDW254P January 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –8 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 8 V VDS = 0 V 100 nA –1.5 V On Characteristics –20 V –11 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 2 VGS = –4.5 V, ID = –9.2 A ID = –7.9 A VGS = –2.5 V, ID = –6.5 A VGS = –1.8 V, VGS=–4.5 V, ID =–9.2 A, TJ=125°C 9 11 14 12 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –9.2 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, –0.4 –0.6 mV/°C 12 15 21.5 18 –50 mΩ A 54 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time Tr Turn–On Rise Time Td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 5878 pF 994 pF 559 pF (Note 2) 15 27 ns 15 27 ns Turn–Off Delay Time 210 336 ns Turn–Off Fall Time 100 160 ns 60 96 nC VDD = –10 V, VGS = –4.5 V, VDS = –10 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –9.2 A, 7 nC 13 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.2 A (Note 2) –0.5 –1.2 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW254P Rev. D (W) FDW254P Electrical Characteristics FDW254P Typical Characteristics 2 50 VGS = -4.5V -3.0V 40 VGS = -1.5V -2.0V 1.8 -1.5V -2.5V 1.6 30 -2.0V 1.4 20 -2.5V 1.2 -3.0V -3.5V 10 1 0 -4.5V 0.8 0 0.5 1 1.5 2 0 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 40 50 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.035 1.5 ID = -4.6A ID = -9.2A VGS = -4.5V 1.4 0.03 1.3 0.025 1.2 1.1 0.02 1 0.015 o TA = 125 C 0.9 0.01 0.8 o TA = 25 C 0.005 0.7 -50 -25 0 25 50 75 100 125 0 150 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 o TA = -55 C VDS = -5V VGS = 0V o 25 C o 125 C 40 10 o TA = 125 C 30 1 20 0.1 o 25 C o -55 C 0.01 10 0.001 0 0.5 1 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW254P Rev. D (W) FDW254P Typical Characteristics 5 10000 VDS = -6V ID = -9.2A f = 1 MHz VGS = 0 V -8V 4 8000 -10V CISS 3 6000 2 4000 COSS 1 2000 CRSS 0 0 10 20 30 40 50 60 0 70 0 5 Qg, GATE CHARGE (nC) 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 100µs 10ms RDS(ON) LIMIT SINGLE PULSE RθJA = 208°C/W TA = 25°C 40 100ms 10 1s 30 10s 1 DC 20 VGS = -4.5V SINGLE PULSE 0.1 10 o RθJA = 208 C/W o TA = 25 C 0.01 0 0.01 0.1 1 10 100 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 208 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW254P Rev. D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4