Freescale MMA6361L ±1.5g, â±6g two axis low-g micromachined accelerometer Datasheet

Document Number: MMA6361L
Rev 1, 08/2011
Freescale Semiconductor
Data Sheet: Technical Data
±1.5g, ±6g Two Axis Low-g
Micromachined Accelerometer
MMA6361L
The MMA6361L is a low power, low profile capacitive micromachined
accelerometer featuring signal conditioning, a 1-pole low pass filter,
temperature compensation, and g-Select which allows for the selection
between two sensitivities. Zero-g offset and sensitivity are factory set and
require no external devices. The MMA6361L includes a Sleep Mode that
makes it ideal for handheld battery powered electronics.
Features
3mm x 5mm x 1.0mm LGA-14 Package
Low Current Consumption: 400 μA
Sleep Mode: 3 μA
Low Voltage Operation: 2.2 V – 3.6 V
High Sensitivity (800 mV/g @ 1.5g)
Selectable Sensitivity (±1.5g, ±6g)
Fast Turn On Time (0.5 ms Enable Response Time)
Signal Conditioning with Low Pass Filter
Robust Design, High Shocks Survivability
RoHS Compliant
Environmentally Preferred Product
Low Cost
Bottom View
14 LEAD
LGA
CASE 1977-01
Typical Applications
Top View
–40 to +85°C
1977-01
LGA-14
Tray
MMA6361LR1
–40 to +85°C
1977-01
LGA-14
7” Tape & Reel
MMA6361LR2
–40 to +85°C
1977-01
LGA-14
13” Tape & Reel
Sleep
VSS
VDD
13
MMA6361LT
12
Shipping
11
Package
N/C
10
Package
Drawing
N/C
g-Select
9
1
Temperature
Range
7
N/C
Part Number
GND
N/C
8
YOUT
ORDERING INFORMATION
2
XOUT
3
N/C
14
N/C
4
3D Gaming: Tilt and Motion Sensing, Event Recorder
HDD MP3 Player
Laptop PC: Anti-Theft
Cell Phone: Image Stability, Text Scroll, Motion Dialing, eCompass
Pedometer: Motion Sensing
PDA: Text Scroll
Robotics: Motion Sensing
5
•
•
•
•
•
•
•
6
•
•
•
•
•
•
•
•
•
•
•
•
MMA6361L: XY AXIS
ACCELEROMETER
±1.5g, ±6g
N/C
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2010, 2011. All rights reserved.
VDD
CLOCK
GEN
OSCILLATOR
G-CELL
SENSOR
Sleep
X-TEMP
COMP
XOUT
Y-TEMP
COMP
YOUT
GAIN
+
FILTER
C to V
CONVERTER
CONTROL LOGIC
NVM TRIM
CIRCUITS
VSS
Figure 2. Simplified Accelerometer Functional Block Diagram
Table 1. Maximum Ratings
(Maximum ratings are the limits to which the device can be exposed without causing permanent damage.)
Rating
Symbol
Value
Unit
Maximum Acceleration (all axis)
gmax
±5000
g
Supply Voltage
VDD
–0.3 to +3.6
V
Ddrop
1.8
m
Tstg
–40 to +125
°C
Drop Test
(1)
Storage Temperature Range
1. Dropped onto concrete surface from any axis.
ELECTRO STATIC DISCHARGE (ESD)
WARNING: This device is sensitive to electrostatic
discharge.
Although the Freescale accelerometer contains internal
2000 V ESD protection circuitry, extra precaution must be
taken by the user to protect the chip from ESD. A charge of
over 2000 volts can accumulate on the human body or
associated test equipment. A charge of this magnitude can
alter the performance or cause failure of the chip. When
handling the accelerometer, proper ESD precautions should
be followed to avoid exposing the device to discharges which
may be detrimental to its performance.
MMA6361L
2
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Freescale Semiconductor
Table 2. Operating Characteristics
Unless otherwise noted: -40°C < TA < 85°C, 2.2 V < VDD < 3.6 V, Acceleration = 0g, Loaded output(1)
Characteristic
Symbol
Min
Typ
Max
Unit
VDD
IDD
IDD
TA
2.2
—
—
-40
3.3
400
3
—
3.6
600
10
+85
V
μA
μA
°C
gFS
gFS
—
—
±1.5
±6.0
—
—
g
g
VOFF
VOFF, TA
1.485
-2.0
1.65
±0.5
1.815
+2.0
V
mg/°C
S1.5g
S6g
S,TA
740
190.6
-0.0075
800
206
±0.002
860
221.5
+0.0075
mV/g
mV/g
%/°C
f-3dBXY
ZO
—
—
400
32
—
—
Hz
kΩ
nPSD
—
350
—
μg/ Hz
tRESPONSE
tENABLE
—
—
1.0
0.5
2.0
2.0
ms
ms
fGCELLXY
fCLK
—
—
6.0
11
—
—
kHz
kHz
(2)
Operating Range
Supply Voltage(3)
Supply Current(4)
Supply Current at Sleep Mode(4)
Operating Temperature Range
Acceleration Range, X-Axis, Y-Axis, Z-Axis
g-Select: 0
g-Select: 1
Output Signal
Zero-g (TA = 25°C, VDD = 3.3 V)(5), (6)
Zero-g(7)
Sensitivity (TA = 25°C, VDD = 3.3 V)
1.5g
6g
Sensitivity(4)
Bandwidth Response
XY
Output Impedance
Noise
Power Spectral Density RMS (0.1 Hz – 1 kHz)(4)
Control Timing
Power-Up Response Time(8)
Enable Response Time(9)
Sensing Element Resonant Frequency
XY
Internal Sampling Frequency
Output Stage Performance
Full-Scale Output Range (IOUT = 3 µA)
Nonlinearity, XOUT, YOUT, ZOUT
Cross-Axis Sensitivity(10)
VFSO
VSS+0.1
—
VDD–0.1
V
NLOUT
-1.0
—
+1.0
%FSO
VXY, XZ, YZ
-5.0
—
+5.0
%
1. For a loaded output, the measurements are observed after an RC filter consisting of an internal 32 kΩ resistor and an external 3.3 nF capacitor
(recommended as a minimum to filter clock noise) on the analog output for each axis and a 0.1μF capacitor on VDD - GND. The output sensor
bandwidth is determined by the Capacitor added on the output. f = 1/2π * (32 x 103) * C. C = 3.3 nF corresponds to BW = 1507 HZ, which is
the minimum to filter out internal clock noise.
2. These limits define the range of operation for which the part will meet specification.
3. Within the supply range of 2.2 and 3.6 V, the device operates as a fully calibrated linear accelerometer. Beyond these supply limits the device
may operate as a linear device but is not guaranteed to be in calibration.
4. This value is measured with g-Select in 1.5g mode.
5. The device can measure both + and – acceleration. With no input acceleration the output is at midsupply. For positive acceleration the output
will increase above VDD/2. For negative acceleration, the output will decrease below VDD/2.
6. For optimal 0g offset performance, adhere to AN3484 and AN3447
7.Product Performance will not exceed this minimum level, however measurement over time will not be equal to time zero measurements for
this specific parameter.
8. The response time between 10% of full scale VDD input voltage and 90% of the final operating output voltage.
9. The response time between 10% of full scale Sleep Mode input voltage and 90% of the final operating output voltage.
10. A measure of the device’s ability to reject an acceleration applied 90° from the true axis of sensitivity.
MMA6361L
Sensors
Freescale Semiconductor
3
PRINCIPLE OF OPERATION
The Freescale accelerometer is a surface-micromachined
integrated-circuit accelerometer.
The device consists of a surface micromachined
capacitive sensing cell (g-cell) and a signal conditioning ASIC
contained in a single package. The sensing element is sealed
hermetically at the wafer level using a bulk micromachined
cap wafer.
The g-cell is a mechanical structure formed from
semiconductor materials (polysilicon) using semiconductor
processes (masking and etching). It can be modeled as a set
of beams attached to a movable central mass that move
between fixed beams. The movable beams can be deflected
from their rest position by subjecting the system to an
acceleration (Figure 3).
As the beams attached to the central mass move, the
distance from them to the fixed beams on one side will
increase by the same amount that the distance to the fixed
beams on the other side decreases. The change in distance
is a measure of acceleration.
The g-cell beams form two back-to-back capacitors
(Figure 3). As the center beam moves with acceleration, the
distance between the beams changes and each capacitor's
value will change, (C = Aε/D). Where A is the area of the
beam, ε is the dielectric constant, and D is the distance
between the beams.
The ASIC uses switched capacitor techniques to measure
the g-cell capacitors and extract the acceleration data from
the difference between the two capacitors. The ASIC also
signal conditions and filters (switched capacitor) the signal,
providing a high level output voltage that is ratiometric and
proportional to acceleration.
Acceleration
Figure 3. Simplified Transducer Physical Model
SPECIAL FEATURES
g-Select
The g-Select feature allows for the selection between two
sensitivities. Depending on the logic input placed on pin 10,
the device internal gain will be changed allowing it to function
with a 1.5g or 6g sensitivity (Table 3). This feature is ideal
when a product has applications requiring two different
sensitivities for optimum performance. The sensitivity can be
changed at anytime during the operation of the product. The
g-Select pin can be left unconnected for applications
requiring only a 1.5g sensitivity as the device has an internal
pull-down to keep it at that sensitivity (800 mV/g).
Table 3. g-Select Pin Description
g-Select
g-Range
Sensitivity
0
1.5g
800 mV/g
1
6g
206 mV/g
Sleep Mode
The 2 axis accelerometer provides a Sleep Mode that is
ideal for battery operated products. When Sleep Mode is
active, the device outputs are turned off, providing significant
reduction of operating current. A low input signal on pin 7
(Sleep Mode) will place the device in this mode and reduce
the current to 3 μA typ. For lower power consumption, it is
recommended to set g-Select to 1.5g mode. By placing a high
input signal on pin 7, the device will resume to normal mode
of operation.
Filtering
The 2 axis accelerometer contains an onboard single-pole
switched capacitor filter. Because the filter is realized using
switched capacitor techniques, there is no requirement for
external passive components (resistors and capacitors) to set
the cut-off frequency.
Ratiometricity
Ratiometricity simply means the output offset voltage and
sensitivity will scale linearly with applied supply voltage. That
is, as supply voltage is increased, the sensitivity and offset
increase linearly; as supply voltage decreases, offset and
sensitivity decrease linearly. This is a key feature when
interfacing to a microcontroller or an A/D converter because
it provides system level cancellation of supply induced errors
in the analog to digital conversion process.
MMA6361L
4
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Freescale Semiconductor
BASIC CONNECTIONS
Pin Descriptions
PCB Layout
Top View
POWER SUPPLY
N/C
N/C
Figure 4. Pinout Description
C
VRH
P0
g-Select
P1
GND
C
C
VDD
VSS
C
A/DIN
A/DIN
Description
1
N/C
2
XOUT
X direction output voltage.
3
YOUT
Y direction output voltage,
4
N/C
Unused for factory trim. Leave unconnected.
5
VSS
Power Supply Ground.
6
VDD
Power Supply Input.
7
Sleep
8
NC
No internal connection. Leave unconnected.
9
N/C
No internal connection. Leave unconnected.
10
g-Select
11
N/C
Unused for factory trim. Leave unconnected.
12
N/C
Unused for factory trim. Leave unconnected.
13
GND
Connect to Ground.
14
N/C
Unused for factory trim. Leave unconnected.
No internal connection. Leave unconnected.
Logic input pin to enable product or Sleep Mode
Logic input pin to select g level
10
13
VDD
g-Select
GND
XOUT
6
5
7
2
VDD
YOUT
VSS
NOTES:
1. Use 0.1 µF capacitor on VDD to decouple the power
source.
2. Physical coupling distance of the accelerometer to
the microcontroller should be minimal.
3. Place a ground plane beneath the accelerometer to
reduce noise, the ground plane should be attached to
all of the open ended terminals shown in Figure 6.
4. Use a 3.3 nF capacitor on the outputs of the
accelerometer to minimize clock noise (from the
switched capacitor filter circuit).
5. PCB layout of power and ground should not couple
power supply noise.
7. A/D sampling rate and any external power supply
switching frequency should be selected such that
they do not interfere with the internal accelerometer
sampling frequency (11 kHz for the sampling
frequency). This will prevent aliasing errors.
3.3 nF
0.1 μF
Figure 6. Recommended PCB Layout for Interfacing
Accelerometer to Microcontroller
6. Accelerometer and microcontroller should not be a
high current path.
MMA6361L
Logic
Input
C
Sleep
YOUT
Table 4. Pin Descriptions
Logic
Input
VSS
XOUT
Sleep
Pin No. Pin Name
VDD
Microcontroller
g-Select
Accelerometer
13
12
11
10
1
2
3
N/C
7
VDD
N/C
9
VSS
GND
8
N/C
4
YOUT
5
XOUT
6
N/C
14
N/C
3
8. 10 MΩ or higher is recommended on XOUT, YOUT and
ZOUT to prevent loss due to the voltage divider
relationship between the internal 32 kΩ resistor and
the measurement input impedance.
3.3 nF
Sleep
Figure 5. Accelerometer with Recommended
Connection Diagram
MMA6361L
Sensors
Freescale Semiconductor
5
DYNAMIC ACCELERATION
Top View
+Y
6
-X
5
4
3
2
1
7
+X
14
8
9
10
11
12
13
-Y
14-Pin LGA Package
: Arrow indicates direction of package movement.
STATIC ACCELERATION
Direction of Earth's gravity field.*
Top View
6
5
4
3
2
1
7
14
X
13
Y
@ +1g = 2.45 V
5
Z
@ 0g = 1.65 V
OUT
OUT
12
1
@ 0g = 1.65 V
6
OUT
4
10
3
Z
9
2
8
7
@ 0g = 1.65 V
OUT
OUT
@ 0g = 1.65 V
@ +1g = 2.45 V
Bottom
1
@ 0g = 1.65 V
Z
OUT
13
@ +1g = 2.45 V
Y
OUT
@ 0g = 1.65 V
14
OUT
OUT
Y
13
X
Bottom
X
12
11
2
Side View
Top
13
11
3
12
10
4
11
9
5
10
8
6
9
7
14
8
12
11
10
9
8
X
@ -1g = 0.85 V
Y
@ 0g = 1.65 V
Z
@ 0g = 1.65 V
OUT
14
7
OUT
OUT
Top
X
OUT
Y
@ 0g = 1.65 V
Z
@ -1g =0.85 V
OUT
OUT
1
2
3
X
OUT
4
5
6
@ 0g = 1.65 V
Y
@ -1g = 0.85 V
Z
@ 0g = 1.65 V
OUT
OUT
@ 0g = 1.65 V
* When positioned as shown, the Earth’s gravity will result in a positive 1g output.
MMA6361L
6
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Freescale Semiconductor
X-TCO mg/degC
LSL
-2
X-TCS %/degC
Target
-1
0
USL
1
2
Y-TCO mg/degC
LSL
-2
0
-0.01
Target
-0.005
0
USL
.005
.01
Y-TCS %/degC
Target
-1
LSL
USL
1
2
LSL
-0.01
Target
-0.005
0
USL
.005
.01
Figure 7. MMA6361L Temperature Coefficient of Offset (TCO) and
Temperature Coefficient of Sensitivity (TCS) Distribution Charts
MMA6361L
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Freescale Semiconductor
7
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
PCB Mounting Recommendations
MEMS based sensors are sensitive to Printed Circuit
Board (PCB) reflow processes. For optimal zero-g offset after
PCB mounting, care must be taken to PCB layout and reflow
conditions. Reference application note AN3484 for best
practices to minimize the zero-g offset shift after PCB
mounting.
Surface mount board layout is a critical portion of the total
design. The footprint for the surface mount packages must be
the correct size to ensure proper solder connection interface
between the board and the package.
With the correct footprint, the packages will self-align when
subjected to a solder reflow process. It is always
recommended to design boards with a solder mask layer to
avoid bridging and shorting between solder pads.
1
13
10x0.8
6x2
6
8
14x0.6
12x1
14x0.9
MMA6361L
8
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Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 1977-01
ISSUE A
14-LEAD LGA
MMA6361L
Sensors
Freescale Semiconductor
9
PACKAGE DIMENSIONS
CASE 1977-01
ISSUE A
14-LEAD LGA
MMA6361L
10
Sensors
Freescale Semiconductor
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MMA6361L
Rev. 1
08/2011
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