Fairchild FJZ945 Audio frequency amplifier & high frequency osc. Datasheet

FJZ945
FJZ945
Audio Frequency Amplifier & High
Frequency OSC.
3
• Complement to FJZ733
• Collector-Base Voltage : VCBO=60V
• High Current Gain Bandwidth Product : fT=300MHz (Typ.)
2
1
SOT-623F
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
60
Units
V
VCEO
VEBO
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
IC
V
Collector Current
150
mA
PC
Collector Power Dissipation
100
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
60
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
50
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
5
ICBO
Collector Cut-off Current
VCB=40V, IE=0
IEBO
Emitter Cut-off Current
VEB=3V, IC=0
hFE
DC Current Gain
VCE=6V, IC=1.0mA
Typ.
Max.
Units
V
V
V
40
0.1
µA
0.1
µA
700
VCE (sat)
Collector-Emitter Saturation Voltage
IC=100mA, IB=10mA
0.15
fT
Current Gain Bandwidth Product
VCE=6V, IC=10mA
300
0.3
V
MHz
Cob
Output Capacitance
VCB=6V, IE=0, f=1MHz
2.5
pF
NF
Noise Figure
VCE=6V, IC=0.5mA
f=1KHz, RS=500Ω
4.0
dB
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
Max.
1250
Units
°C/W
hFE Classification & Marking
Classification
R
O
Y
G
L
hFE
40 ~ 80
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
Marking
C2
C3
C1
C4
C5
Marking
C1
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
FJZ945
Typical Characteristics
100
IB = 400µ A
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
IB = 300µ A
IB = 250µ A
60
IB = 200µ A
IB = 150 µ A
40
IB = 100 µ A
20
IB = 50µ A
0
0
2
4
6
8
10
VCE=6V
100
IB = 350 µ A
80
12
14
16
18
80
0
125 C
60
20
0
0.0
20
VBE(sat)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
Ta=125 C
0
Ta=25 C
0
Ta=-25 C
100
0.6
0.8
1
0
0
Ta=25 C
0.1
1E-3
1000
0
Ta=125 C
0.01
0.1
Figure 4. Base-Emitter Saturation Voltage
100
1
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
IC=10IB
VCE(sat)[V], SATURATION VOLTAGE
1
IC[A], COLLECTOR CURRENT
Figure 3. DC Current Gain
0
Ta=125 C
0.01
1E-3
1.2
Ta=-25 C
IC[mA], COLLECTOR CURRENT
0.1
1.0
IC=10IB
VCE=6V
10
0.4
Figure 2. Transfer Characteristic
0
1
0.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
-25 C
40
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
0
0
25 C
0
Ta=25 C
0
Ta=-25 C
10
1
0.1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
©2003 Fairchild Semiconductor Corporation
1
10
100
1000
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 6. Output Capacitance
Rev. B1, July 2003
FJZ945
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
Typical Characteristics (Continued)
1000
VCE = 6V
100
10
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
FJZ945
Package Dimensions
SOT-623F
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet Series™
Bottomless™
FAST®
FASTr™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I3
Similar pages