Vishay IRLIZ14G Power mosfet Datasheet

IRLIZ14G, SiHLIZ14G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Isolated Package
60
RDS(on) (Ω)
VGS = 5.0 V
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
0.20
Qg (Max.) (nC)
8.4
• Sink to Lead Creepage Distance = 4.8 mm
Qgs (nC)
3.5
• Logic-Level Gate Drive
Qgd (nC)
6.0
• RDS(on) Specified at VGS = 4 V and 5 V
Configuration
Single
Available
RoHS*
COMPLIANT
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
D
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
G
G D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220 FULLPAK
IRLIZ14GPbF
SiHLIZ14G-E3
IRLIZ14G
SiHLIZ14G
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
VGS at 5.0 V
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
EAS
PD
dV/dt
TJ, Tstg
for 10 s
6-32 or M3 screw
LIMIT
60
± 10
8.0
5.7
32
0.18
68
27
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 1.2 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91315
S-Pending-Rev. A, 21-Jul-08
WORK-IN-PROGRESS
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IRLIZ14G, SiHLIZ14G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
65
Maximum Junction-to-Case (Drain)
RthJC
-
5.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 µA
60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.070
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
1.0
-
2.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 10 V
-
-
± 100
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
VGS = 5.0 V
ID = 4.8 Ab
-
-
0.20
VGS = 4.0 V
Ab
-
-
0.28
3.6
-
-
-
400
-
-
170
-
-
42
-
-
12
-
ID = 4.0
VDS = 25 V, ID = 4.8 Ab
µA
Ω
S
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Drain to Sink Capacitance
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
C
Total Gate Charge
Qg
Gate-Source Charge
Qgs
f = 1.0 MHz
VGS = 5.0 V
ID = 10 A, VDS = 48 V,
see fig. 6 and 13b
-
-
8.4
-
-
3.5
Gate-Drain Charge
Qgd
-
-
6.0
Turn-On Delay Time
td(on)
-
9.3
-
-
110
-
-
17
-
-
26
-
-
4.5
-
-
7.5
-
-
-
8.0
-
-
32
-
-
1.6
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = 30 V, ID = 10 A,
RG = 12 Ω, RD= 2.8 Ω,
see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb
V
-
65
130
ns
-
0.33
0.65
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91315
S-Pending-Rev. A, 21-Jul-08
IRLIZ14G, SiHLIZ14G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC= 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91315
S-Pending-Rev. A, 21-Jul-08
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IRLIZ14G, SiHLIZ14G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91315
S-Pending-Rev. A, 21-Jul-08
IRLIZ14G, SiHLIZ14G
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
RG
+
-
I AS
V DD
VDS
5V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91315
S-Pending-Rev. A, 21-Jul-08
IAS
Fig. 12b - Unclamped Inductive Waveforms
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IRLIZ14G, SiHLIZ14G
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91315
S-Pending-Rev. A, 21-Jul-08
IRLIZ14G, SiHLIZ14G
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices and 3 V drive devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91315.
Document Number: 91315
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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