IRFHM8334TRPbF VDS VGS max RDS(on) max 30 V ± 20 V 9.0 (@VGS = 10V) (@VGS = 4.5V) 13.5 Qg typ. 7.1 m 25 (@Tc(Bottom) = 25°C) : nC h ID HEXFET® Power MOSFET PQFN 3.3 X 3.3 mm A Applications • Control MOSFET for high frequency buck converters Features Low Thermal Resistance to PCB (< 4.5°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Consumer Qualification Base Part Number Package Type IRFHM8334PBF PQFN 3.3mm x 3.3mm Benefits Enable better thermal dissipation Increased Power Density results in Multi-Vendor Compatibility ⇒ Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM8334TRPBF Absolute Maximum Ratings Parameter Max. Units ± 20 V V GS Gate-to-Source Voltage I D @ TA = 25°C Continuous Drain Current, V GS @ 10V I D @ TC(Bottom) = 25°C Continuous Drain Current, V GS @ 10V 43 I D @ TC(Bottom) = 100°C Continuous Drain Current, V GS @ 10V 27 I DM Continuous Drain Current, V GS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current P D @T A = 25°C Power Dissipation P D @T C(Bottom) = 25°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range I D @ TC = 25°C 13 gh gh 25h A 176 f 2.7 28 0.021 -55 to + 150 W W/°C °C Notes through are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM8334TRPbF Static @ T J = 25°C (unless otherwise specified) Parameter BV DSS Drain-to-Source Breakdown Voltage ΔΒV DSS/ΔT J Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance Min. Typ. 30 ––– Max. Units ––– ––– 21 ––– ––– 7.2 9.0 ––– 11.2 13.5 Conditions V GS = 0V, I D = 250μA V mV/°C Reference to 25°C, I D = 1.0mA V GS = 10V, ID = 20A mΩ V GS = 4.5V, ID = 16A d d V DS = V GS, ID = 25μA V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔV GS(th) Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C I DSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 V DS = 24V, V GS = 0V, TJ = 125°C I GSS Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 44 ––– ––– S V DS = 10V, I D = 20A nC V GS = 10V, V DS = 15V, I D = 20A gfs Forward Transconductance Qg Total Gate Charge ––– 15 ––– Qg Total Gate Charge ––– 7.1 11 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain Charge ––– 2.3 ––– Qgodr Gate Charge Overdrive ––– 1.3 ––– V DS = 24V, V GS = 0V nA V GS = -20V V DS = 15V nC V GS = 4.5V V DS = 16V, V GS = 0V Qsw Switch Charge (Qgs2 + Qgd) ––– 3.3 ––– Qoss Output Charge ––– 5.7 ––– nC RG Gate Resistance ––– 1.2 ––– Ω t d(on) Turn-On Delay Time ––– 8.3 ––– tr Rise Time ––– 14 ––– t d(off) Turn-Off Delay Time ––– 7.0 ––– tf Fall Time ––– 4.6 ––– Ciss Input Capacitance ––– 1180 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 110 ––– I D = 20A V DD = 30V, V GS = 4.5V I D = 20A ns RG=1.8Ω V GS = 0V pF V DS = 10V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy E AS Typ. c Max. Units 35 mJ Diode Characteristics Parameter IS Min. Continuous Source Current ––– (Body Diode) Typ. ––– Max. Units h 25 A I SM Pulsed Source Current V SD (Body Diode) Diode Forward Voltage t rr Reverse Recovery Time ––– 13 Qrr Reverse Recovery Charge ––– 19 ––– ––– 176 ––– ––– 1.0 Conditions MOSFET symbol showing the D G integral reverse V p-n junction diode. T J = 25°C, IS = 20A, V GS = 0V 20 ns T J = 25°C, IF = 20A, V DD = 15V 29 nC di/dt = 380 A/μs S d d Thermal Resistance RθJC (Top) e Junction-to-Case e RθJA Junction-to-Ambient RθJC (Bottom) RθJA (<10s) 2 Parameter Junction-to-Case f Junction-to-Ambient f www.irf.com © 2014 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. Units 4.5 44 °C/W 47 30 June 5, 2014 IRFHM8334TRPbF 1000 1000 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 1 0.1 2.5V BOTTOM 10 2.5V 1 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.01 0.1 1 10 100 0.1 1000 Fig 1. Typical Output Characteristics 100 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.8 100 T J = 150°C 10 T J = 25°C VDS = 15V ≤60μs PULSE WIDTH 1.0 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 7 8 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C oss = C ds + C gd Ciss 1000 Coss Crss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 10 12.0 VDS= 24V VDS= 15V 10.0 VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V www.irf.com © 2014 International Rectifier 0 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback June 5, 2014 IRFHM8334TRPbF 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100μsec 1msec 10 Limited by package 1 10msec 0.1 VGS = 0V Tc = 25°C Tj = 150°C Single Pulse 0.01 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 VDS , Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.8 50 40 i VGS(th) , Gate threshold Voltage (V) Limited By Source Bonding Technology ID, Drain Current (A) DC 30 20 10 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 ID = 25μA ID = 250μA ID = 1.0mA ID = 1.0A 1.0 0.8 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 30 160 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFHM8334TRPbF ID = 20A 25 20 15 T J = 125°C 10 T J = 25°C 5 ID 4.3A 9.0A BOTTOM 20A 140 TOP 120 100 80 60 40 20 0 0 5 10 15 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2014 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback June 5, 2014 IRFHM8334TRPbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K s VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback June 5, 2014 IRFHM8334TRPbF PQFN 3.3mm x 3.3mm Outline Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3mm x 3.3mm Outline Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM8334TRPbF PQFN 3.3mm x 3.3mm Outline Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS Ao DIMENSION (MM) MIN MAX 3.50 3.70 Bo Ko 3.50 1.10 3.70 1.30 .138 .043 .146 .051 P1 W 7.90 11.80 8.10 12.20 .311 .465 .319 .480 W1 Qty 12.30 12.50 .484 .492 CODE QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 4000 Reel Diameter CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 13 Inches DESCRIPTION Dimens ion design to accommodate the component width Dimension design to accommodate the component lenght Dimension des ign to accommodate the component thickness Overall width of the carrier tape Pitch between success ive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM8334TRPbF † Qualification information Consumer Qualification level (per JE DE C JE S D47F RoHS compliant ††† guidelines ) MS L1 PQFN 3.3mm x 3.3mm Moisture Sensitivity Level †† ††† (per JEDE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Notes: Starting TJ = 25°C, L = 0.18mH, RG = 50Ω, IAS = 20A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology. Revision History Date 6/5/2014 Comment • Updated schematic on page1 • Updated Tape and Reel on page 8. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014