Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50 Vdc Emitter – Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 50 — Vdc Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO — 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO — 50 nAdc OFF CHARACTERISTICS Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N5209 2N5210 100 200 300 600 (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5209 2N5210 150 250 — — (IC = 10 mAdc, VCE = 5.0 Vdc)(1) 2N5209 2N5210 150 250 — — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.7 Vdc Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) VBE(on) — 0.85 Vdc fT 30 — MHz Ccb — 4.0 pF 150 250 600 900 SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 2N5209 2N5210 — Noise Figure (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ, f = 1.0 kHz) 2N5209 2N5210 NF — — 3.0 2.0 dB (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) 2N5209 2N5210 — — 4.0 3.0 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS ≈ 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS ≈ 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 µA 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 3.0 mA 1.0 mA 300 µA 100 µA 0.3 0.2 RS ≈ 0 0.1 10 20 10 µA 50 100 200 10 16 3.0 1.0 0.7 0.5 5.0 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 8.0 IC = 1.0 mA 100 µA 10 µA 4.0 30 µA 0 10 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 16 100 µA 100 70 50 3.0 mA 1.0 mA 30 300 µA 20 10 7.0 5.0 30 µA 10 µA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 IC = 10 mA 3.0 mA 1.0 mA 12 300 µA 8.0 100 µA 30 µA 4.0 10 µA BANDWIDTH = 1.0 Hz 0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure 3 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) – 0.4 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 – 0.8 – 1.2 TJ = 25°C to 125°C – 1.6 – 2.0 – 55°C to 25°C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 – 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25°C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 4 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 9. “On” Voltages 20 500 300 200 100 VCE = 5.0 V TJ = 25°C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current–Gain — Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5209/D