Fuji FMI12N60ES N-channel silicon power mosfet Datasheet

FMI12N60ES
FUJI POWER MOSFET
Super FAP-E3S series
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
Maintains both low power loss and low noise
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Equivalent circuit schematic
T-Pack(L)
Drain(D)
Applications
Gate(G)
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
I DP
VGS
I AR
E AS
E AR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Drain-Source Voltage
Characteristics
600
600
±12
±48
±30
12
384
18
4.4
100
1.67
180
150
-55 to + 150
2
Tch
Tstg
VISO
Operating and Storage Temperature range
Isolation Voltage
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
W
°C
°C
kVrms
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS (th)
Zero Gate Voltage Drain Current
I DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q GD
Q SW
I AV
VSD
trr
Qrr
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
I D =250µA, VGS =0V
I D =250µA, VDS =VGS
VDS =600V, VGS =0V
VDS =480V, VGS =0V
VGS =±30V, VDS =0V
I D =6A, VGS =10V
I D =6A, VDS =25V
Tch =25°C
Tch =125°C
VDS =25V
VGS =0V
f=1MHz
Vcc =300V
VGS =10V
I D =6A
RG =27Ω
Vcc =300V
I D =12A
VGS =10V
L=2.64mH, Tch =25°C
I F =12A, VGS =0V, Tch =25°C
I F =12A, VGS =0V
-di/dt=100A/µs, Tch=25°C
min.
600
3.7
4
12
-
typ.
4.2
10
0.641
8
1300
150
8.5
40
40
74
19
37
15
12
6.5
0.86
0.52
5.5
max.
4.7
25
250
100
0.75
1950
225
13
60
60
111
29
56
23
18
10
1.30
-
Unit
V
V
min.
typ.
max.
0.690
75.0
Unit
°C/W
°C/W
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS =5A, L=28.2mH, Vcc=60V, RG =50Ω
E AS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Test Conditions
Channel to case
Channel to ambient
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : I F ≤-I D, dv/dt=4.4kV/µs, Vcc≤BVDSS, Tch≤150°C.
1
FMI12N60ES
200
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
Allowable Power Dissipation
PD=f(Tc)
2
10
t=
1µs
180
160
10µs
1
10
140
100µs
0
100
ID [A]
PD [W]
120
80
10
1ms
60
10
40
Power loss waveform :
Square waveform
-1
PD
20
t
0
0
25
50
75
100
125
10
150
-2
-1
10
10
0
1
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
25
100
20
10V
8.0V
2
10
VDS [V]
10
10
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10
7.5V
ID [A]
ID[A]
15
7.0V
10
1
6.5V
5
VGS=6.0V
0.1
0
0
100
4
8
12
VDS [V]
16
20
0
24
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
1.3
2
4
6
VGS[V]
8
VGS=6.0V
6.5V
7V
1.1
RDS(on) [ Ω ]
gfs [S]
1
12
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
1.2
10
10
8V
10V
20V
1.0
0.9
0.8
0.7
0.6
0.1
0.1
1
10
0.5
100
0
ID [A]
5
10
15
ID [A]
2
20
3
FMI12N60ES
2.5
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
8
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7
6
VGS(th) [V]
RDS(on) [ Ω ]
2.0
1.5
max.
1.0
typ.
5
max.
4
typ.
3
min.
2
0.5
1
0
0.0
-50
-25
0
25
50
Tch [°C]
75
100
125
-50
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=12A,Tch=25 °C
4
14
0
25
50
75
Tch [°C]
100
125
Vcc= 120V
300V
480V
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
3
10
10
C [pF]
8
2
10
6
Coss
4
1
10
2
Crss
0
0
0
10
20
30
40
50
60
10
70
-2
10
-1
0
10
10
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
3
10
10
2
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=27 Ω
td(off)
2
10
t [ns]
IF [A]
td(on)
1
0.1
0.00
1
10
VDS [V]
Qg [nC]
100
150
10
12
VGS [V]
-25
tf
tr
1
10
0
0.25
0.50
0.75
1.00
1.25
10
1.50
-1
10
VSD [V]
3
0
10
1
ID [A]
10
2
10
FMI12N60ES
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=12A
600
10 1
500
Zth(ch- c) [°C/ W]
10 0
IAS=5A
400
EAV [mJ]
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
300
IAS=7A
10 -1
10 -2
200
IAS=11A
10 -3
10 -6
100
10 -5
10 -4
10 -3
t [sec]
0
0
25
50
75
100
125
150
starting Tch [°C]
4
10 -2
10 -1
10 0
FMI12N60ES
FUJI POWER MOSFET
WARNING
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