Rohm FMS3 General purpose (dual transistors) Datasheet

FMS3 / FMS4 / IMT4
Transistors
General purpose (dual transistors)
FMS3 / FMS4 / IMT4
!External dimensions (Units : mm)
!Features
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
V
mA
Power dissipation
Junction temperature
Pc
Tj
300 (TOTAL)
150
mW
˚C
Storage temperature
Tstg
−55∼+150
˚C
0.3to0.6
ROHM : SMT5
EIAJ : SC-74A
∗
1.1
−5
−50
Each lead has same dimensions
(5)
(1)
(4)
0.3
FMS4
2.9
VEBO
IC
0.8
Emitter-base voltage
Collector current
(3)
V
V
0.95 0.95
1.9
−120
−120
∗200mW per element must not be exceeded.
2.9
(3)
(4)
Unit
VCBO
VCEO
0to0.1
Limits
Collector-base voltage
Collector-emitter voltage
(2)
Symbol
1.6
2.8
0.15
Parameter
(5)
(1)
!Absolute maximum ratings (Ta=25°C)
0.95 0.95
1.9
(2)
0.3
FMS3
1.6
!Package, marking, and Packaging specifications
3000
3000
0.3to0.6
ROHM : SMT5
EIAJ : SC-74A
(5)
0.3
IMT4
FMS3
FMS4
Each lead has same dimensions
(3)
(4)
!Circuit diagram
1.1
3000
Marking
Code
Basic ordering unit (pieces)
(1)
SMT6
T4
T108
(2)
IMT4
SMT5
S4
T148
0.95 0.95
1.9
FMS4
SMT5
S3
T148
0to0.1
FMS3
(6)
Part No.
Package
0.8
0.15
2.8
1.6
IMT4
0to0.1
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
−
−
−
−
−
−
V
V
V
IC=−50µA
IC=−1mA
Conditions
VCB=−100V
BVEBO
−120
−120
−5
Collector cutoff current
ICBO
−
−
Emitter cutoff current
IEBO
−
−
−0.5
−0.5
µA
µA
hFE
fT
180
−
820
−
VCE=−6V, IC−2mA
−
−
140
−
−
−0.5
MHz
V
IC/IB=−10mA/−1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
∗Transition frequency of the device.
VCE(sat)
IE=−50µA
VEB=−4V
VCE=−12V, IE=2mA, f=100MHz
∗
1.1
0.8
0.15
2.8
Each lead has same dimensions
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