MOTOROLA MCR25 Silicon controlled rectifier Datasheet

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by MCR25/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
SCRs
25 AMPERES RMS
400 thru 800
VOLTS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability — 300 Amperes
• Industry Standard TO–220AB Package for Ease of Design
A
• Glass Passivated Junctions for Reliability and Uniformity
K
A
G
CASE 221A–06
(TO-220AB)
Style 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
Symbol
Value
VDRM
VRRM
MCR25D
MCR25M
MCR25N
On-State RMS Current
(All Conduction Angles)
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Unit
Volts
400
600
800
IT(RMS)
25
A
ITSM
300
A
I2t
373
A2sec
PGM
20.0
Watts
PG(AV)
0.5
Watts
IGM
2.0
A
TJ
– 40 to +125
°C
Tstg
– 40 to +150
°C
RθJC
RθJA
1.5
62.5
°C/W
TL
260
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
IDRM
IRRM
mA
—
—
TJ = 25°C
TJ = 125°C
—
—
0.01
2.0
ON CHARACTERISTICS
Peak On-State Voltage* (ITM = 50 A)
VTM
—
—
1.8
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
IGT
4.0
10
30
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
VGT
0.5
0.65
1.0
Volts
IH
5.0
25
40
mA
dv/dt
50
200
—
V/µs
Hold Current (Anode Voltage =12 V)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
T C , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
125
°
35
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
120
115
a
110
a = Conduction
105
Angle
100
95
90
85
a = 30°
80
75
60 °
90° 120° 180°
dc
0
dc
a
180°
25
120°
90°
60 °
20
a = 30°
15
10
5
0
0
5
10
15
20
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 1. Average Current Derating
2
5
30
25
0
15
20
5
10
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
25
Figure 2. Maximum On–State Power Dissipation
Motorola Thyristor Device Data
I T , INSTANTANOUS ON-STATE CURRENT (AMPS)
1
R(t) TRANSIENT THERMAL R (NORMALIZED)
100
Maximum @ TJ = 125°C
Typical @ TJ = 25°C
10
Maximum @ TJ = 25°C
1
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Z qJC(t)
0.01
0.1
2.8
+ RqJC @ R(t)
0.1
1
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
Figure 3. On–State Characteristics
10
100
t, TIME (ms)
@
1 10 4
1000
Figure 4. Transient Thermal Response
100
I L , LATCHING CURRENT (mA)
I H , HOLDING CURRENT (mA)
100
10
1
–40
–25
–10
5
20 35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
110
10
–40
125
–10
5
20 35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
110
125
Figure 6. Typical Latching Current Versus
Junction Temperature
Figure 5. Typical Holding Current Versus
Junction Temperature
100
0.85
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, TRIGGER CURRENT (mA)
–25
10
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
1
–40
–25
–10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
110
Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
Motorola Thyristor Device Data
125
0.4
–40 –25
–10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
110
125
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
3
2500
1200
2000
STATIC dv/dt (V/us)
1000
STATIC dv/dt (V/us)
Gate Cathode Open,
(dv/dt does not depend on RGK )
Gate–Cathode Open,
(dv/dt does not depend on RGK)
800
85°C
600
100°C
110°C
1500
VPK = 275
1000
VPK = 400
400
VPK = 600
TJ = 125°C
500
200
0
VPK = 800
0
200
300
400
500
600
700
800
80
85
90
95
100
105
110
TJ, Junction Temperature (°C )
VPK , Peak Voltage (Volts)
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage.
115
120
125
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature.
I TSM, SURGE CURRENT (AMPS)
300
1 CYCLE
280
260
240
220
200
TJ=125° C f=60 Hz
180
160
1
2
3
4
5
6
7
NUMBER OF CYCLES
8
9
10
Figure 11. Maximum Non–Repetitive
Surge Current
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
J
STYLE 3:
PIN 1.
2.
3.
4.
G
D
N
Motorola Thyristor Device Data
CASE 221A–06
(TO-220AB)
CATHODE
ANODE
GATE
ANODE
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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6
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Motorola Thyristor Device Data
*MCR25/D*
MCR25/D
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