MAC08BT1, MAC08MT1 Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. • Sensitive Gate Trigger Current in Four Trigger Modes • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Device Marking: MAC08BT1: AC08B; MAC08MT1: A08M, and Date Code http://onsemi.com TRIAC 0.8 AMPERE RMS 200 thru 600 VOLTS MT2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G Rating Symbol Peak Repetitive Off–State Voltage(1) (Sine Wave, 50 to 60 Hz, Gate Open, TJ = 25 to 110°C) MAC08BT1 MAC08MT1 VDRM, VRRM On–State Current RMS (TC = 80°C) (Full Sine Wave 50 to 60 Hz) IT(RMS) 0.8 Amps Peak Non–repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 8.0 Amps SOT–223 CASE 318E STYLE 11 I2t 0.4 A2s PIN ASSIGNMENT PGM 5.0 Watts PG(AV) 0.1 Watt TJ – 40 to +110 °C Tstg – 40 to +150 °C Circuit Fusing Considerations (Pulse Width = 8.3 ms) Peak Gate Power (TC = 80°C, Pulse Width v 1.0 µs) Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Value MT1 Unit Volts 4 200 600 1 2 3 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Device Package Shipping MAC08BT1 SOT223 16mm Tape and Reel (1K/Reel) MAC08MT1 SOT223 16mm Tape and Reel (1K/Reel) Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 3 1 Publication Order Number: MAC08BT1/D MAC08BT1, MAC08MT1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 RθJA 156 °C/W Thermal Resistance, Junction to Tab Measured on MT2 Tab Adjacent to Epoxy RθJT 25 °C/W TL 260 °C Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Characteristic Min Typ Max Unit — — — — 10 200 µA µA OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM ON CHARACTERISTICS Peak On–State Voltage(1) (IT = 1.1 A Peak) VTM — — 1.9 Volts Gate Trigger Current (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 Ω) IGT — — 10 mA IH — — 5.0 mA VGT — — 2.0 Volts (dv/dt)c 1.5 — — V/µs dv/dt 10 — — V/µs " Holding Current (Continuous dc) (VD = 12 Vdc, Gate Open, Initiating Current = "20 mA) Gate Trigger Voltage (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 Ω) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On–State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 Ω, See Figure 10) Critical Rate–of–Rise of Off State Voltage (Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method) (1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC08BT1, MAC08MT1 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (–) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 Quadrant III (–) MT2 Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM MAC08BT1, MAC08MT1 0.15 3.8 0.079 2.0 0.091 2.3 0.091 2.3 0.244 6.2 0.079 2.0 0.984 25.0 0.059 1.5 0.096 2.44 0.059 1.5 0.059 1.5 0.096 2.44 0.059 1.5 inches mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 4 10 1.0 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Rθ JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ° C/W IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) MAC08BT1, MAC08MT1 5.0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C) L 4 1 2 3 MINIMUM FOOTPRINT = 0.076 cm2 0 4.0 6.0 FOIL AREA (cm2) 2.0 Figure 2. On-State Characteristics 8.0 10 Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 110 α 30° 90 100 α 60° 90° 80 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C) 100 α = CONDUCTION ANGLE dc 70 α = 180° 60 120° 50 MINIMUM FOOTPRINT 50 OR 60 Hz 40 α = 180° 60 120° 1.0 cm2 FOIL AREA 50 OR 60 Hz 50 40 20 0.5 dc 70 20 0.4 0.1 0.2 0.3 IT(RMS), RMS ON-STATE CURRENT (AMPS) 60° 90° 80 30 0 30° 90 30 α α α = CONDUCTION ANGLE 0 0.1 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.7 Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 110 α 100 30° 60° 90 dc 30° α α = CONDUCTION 90° ANGLE α = 180° 120° 80 70 4.0 cm2 FOIL AREA 60 T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE (° C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C) L TYPICAL MAXIMUM 105 60° dc 100 α = 180° 95 90° 120° 90 α REFERENCE: FIGURE 1 85 α α = CONDUCTION 50 0 0.1 0.6 0.3 0.4 0.5 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.2 0.7 80 0.8 ANGLE 0 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), ON-STATE CURRENT (AMPS) Figure 7. Current Derating Reference: MT2 Tab http://onsemi.com 5 0.7 0.8 MAC08BT1, MAC08MT1 1.0 1.0 α α r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) P(AV) , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 0.9 0.8 α = CONDUCTION 0.7 ANGLE 0.6 120° 0.5 30° α = 180° 0.4 0.3 60° dc 90° 0.2 0.1 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.7 0.01 0.0001 0.8 1.0 0.01 0.1 t, TIME (SECONDS) 0.001 Figure 8. Power Dissipation LL 1N4007 TRIGGER CONTROL MEASURE I CHARGE 100 Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER 10 CHARGE CONTROL NON-POLAR CL RS – ADJUST FOR + dv/dt(c) CS 1N914 51 W MT2 200 V MT1 G Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c 10 10 60 Hz 60° 80° 180 Hz COMMUTATING dv/dt dv/dt c , (V/ µ S) COMMUTATING dv/dt dv/dt c , (V/ µ S) 400 Hz 110° ITM 100° tw f= 1.0 1.0 VDRM 1 2 tw ń + (di dt) c 300 Hz VDRM = 200 V 6f I TM 1000 1.0 60 10 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS http://onsemi.com 6 110 MAC08BT1, MAC08MT1 60 10 STATIC dv/dt (V/ µs) 50 I GT , GATE TRIGGER CURRENT (mA) 600 Vpk TJ = 110°C MAIN TERMINAL #2 POSITIVE 40 30 MAIN TERMINAL #1 POSITIVE 20 10 10,000 100 1000 RG, GATE – MAIN TERMINAL 1 RESISTANCE (OHMS) IGT2 IGT4 IGT1 1.0 0.1 – 40 Figure 13. Exponential Static dv/dt versus Gate – Main Terminal 1 Resistance 40 60 80 0 20 TJ, JUNCTION TEMPERATURE (°C) 100 1.1 VGT , GATE TRIGGER VOLTAGE (VOLTS) IH , HOLDING CURRENT (mA) – 20 Figure 14. Typical Gate Trigger Current Variation 6.0 5.0 4.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 MAIN TERMINAL #1 POSITIVE 1.0 0 – 40 IGT3 – 20 0 20 40 60 80 0.3 – 40 100 TJ, JUNCTION TEMPERATURE (°C) VGT3 VGT4 VGT2 VGT1 – 20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation http://onsemi.com 7 100 MAC08BT1, MAC08MT1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm SOT-223 SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the MT2 pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows: PD = The 156°C/W for the SOT-223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 550 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-223 package. One is to increase the area of the MT2 pad. By increasing the area of the MT2 pad, the power dissipation can be increased. Although one can almost double the power dissipation with this method, one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RθJA versus MT2 pad area is shown in Figure 3. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 550 milliwatts. PD = 110°C – 25°C = 550 milliwatts 156°C/W SOLDER STENCIL GUIDELINES or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the SOT-223 package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass http://onsemi.com 8 MAC08BT1, MAC08MT1 SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 17 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150°C STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO “SPIKE” “SOAK” 219°C 170°C PEAK AT SOLDER 160°C JOINT 150°C 100°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 17. Typical Solder Heating Profile http://onsemi.com 9 MAC08BT1, MAC08MT1 PACKAGE DIMENSIONS SOT–223 CASE 318E–04 ISSUE J A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) H M K http://onsemi.com 10 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 MAC08BT1, MAC08MT1 Notes http://onsemi.com 11 MAC08BT1, MAC08MT1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: [email protected] EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2745 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MAC08BT1/D