NTE NTE320F Silicon npn rf power transistor 40w @ 175mhz Datasheet

NTE320/NTE320F
Silicon NPN RF Power Transistor
40W @ 175MHz
Description:
The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal
amplifier applications required in commercial and industrial equipment operating to 300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power: 40W
Minimum Gain: 4.5dB
Efficiency: 70%
D Available in Two Different Package Styles:
T72 Stud Mount: NTE320
W52K Flange Mount: NTE320F
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Stud Torque (NTE320 Only, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5in. lb.
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly, use 5in. lb.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 100mA, IB = 0
18
–
–
V
V(BR)CES IC = 20mA, VBE = 0
36
–
–
V
V(BR)EBO IE = 10mA, IC = 0
4
–
–
V
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ICES
VCE = 15V, VBE = 0, TC = +55°C
–
–
10
mA
ICBO
VCB = 15V, IE = 0
–
–
2.5
mA
hFE
IC = 1A, VCE = 5V
5
–
–
Cob
VCB = 15V, IE = 0, f = 0.1MHz
–
170
200
pF
GPE
PO = 40W, VCC = 12.5V, f = 175MHz
4.5
–
–
dB
η
PO = 40W, VCC = 12.5V, f = 175MHz
70
–
–
%
ON Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
Function Test
Common–Emitter Amplifier Power Gain
Collector Efficiency
175MHz Test Circuit
+12.5Vdc
+
100µF
0.1µF
RFC
1000pF
SHIELD
C1
L2
C4
RF
Output
L1
RF
Input
DUT
C2
C1, C2, C3, C4
L1
RFC
5.0 – 80pF ARCO 462
Straight Wire, #14 AWG, 1–3/8” Long
100pF
L2
RFC
100pF
C3
1 Turn, #14 AWG, 3/8” ID, Length Plus Leads = 1.000
VK200–20/4B, FERROXCUBE
NTE320
(T72, Stud Mount)
1.060 (26.92) Max
.530
(13.46)
C
.225
(5.72)
E
E
B
.375 (9.52)
Dia
.075 (1.9)
.250
(6.35)
.720
(18.28)
8–32–NC–3A
Wrench Flat
NTE320F
(W52K, Flange Mount)
.725 (18.42)
.122 (3.1) Dia
(2 Holes)
E
C
B
E
.250
(6.35)
.225 (5.72)
.860 (21.84)
.378 (9.56)
.005 (0.15)
.255
(6.5)
.185 (4.7)
.975 (24.77)
.085 (2.14)
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