Renesas CR6PM-12 Thyristor medium power use Datasheet

CR6PM-12
Thyristor
Medium Power Use
REJ03G0358-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
IT (AV) : 6 A
VDRM : 600 V
IGT : 10 mA
Viso : 1500V
Outline
TO-220F
2
3
1
1. Cathode
2. Anode
3. Gate
12
3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
Voltage class
12
Unit
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
600
720
480
600
480
V
V
V
V
V
CR6PM-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
9.4
6
Unit
A
A
ITSM
90
A
I2 t
34
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Viso
5
0.5
6
10
2
– 40 to +125
– 40 to +125
2.0
1500
W
W
V
V
A
°C
°C
g
V
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 85°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Symbol
Rated value
Min.
Typ.
Max.
Unit
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
IRRM
IDRM
VTM
—
—
—
—
—
—
2.0
2.0
1.7
mA
mA
V
Gate trigger voltage
VGT
—
—
1.0
V
0.2
—
—
V
VGD
Gate non-trigger voltage
Gate trigger current
IGT
—
—
10
mA
Holding current
IH
—
15
—
mA
Thermal resistance
Rth (j-c)
—
—
4.0
°C/W
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Rev.1.00, Aug.20.2004, page 2 of 6
Test conditions
Tj = 125°C, VRRM applied
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 20 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 125°C, VD = 1/2 VDRM
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to caseNote1
CR6PM-12
Performance Curves
103
7 Tc = 125°C
5
3
2
Surge On-State Current (A)
101
7
5
3
2
101
7
5
3
2
100
7
5
3
2
1
2
3
4
160
140
120
100
80
60
40
20
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics
Gate Trigger Current vs.
Junction Temperature
VFGM = 6V
VGT = 1V
PGM = 5W
PG(AV)
= 0.5W
IGT = 10mA
VGD = 0.2V
IFGM = 2A
10–1
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
180
0
100
5
× 100 (%)
102
7
5
3
2
0
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
200
102
7
5
3
2
100
Rated Surge On-State Current
103
7
5
3
2
Typical Example
102
7
5
3
2
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 3 of 6
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101
Time (s)
CR6PM-12
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
θ = 30°
14
180°
120°
90°
60°
12
Case Temperature (°C)
Average Power Dissipation (W)
16
10
8
6
θ
4
360°
2
0
2
4
6
8
10
12
14
80
60
40
θ = 30° 60° 90° 120°
0
1
2
3
4
5
180°
6
7
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
θ = 30°
14
180°
120°
90°
60°
12
10
8
6
4
θ
2
360°
0
θ
2
4
6
8
10
12
14
θ
120
360°
θ
Resistive loads
100
80
60
θ = 30°
90° 180°
40
60°
120°
20
Resistive loads
0
140
0
16
0
2
4
6
8
12
10
14
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
16
16
160
θ = 30°
60°
DC
140
270°
180°
120°
90°
12
10
Case Temperature (°C)
14
8
6
θ
4
360°
2
0
8
160
Case Temperature (°C)
Average Power Dissipation (W)
100
Average On-State Current (A)
16
Average Power Dissipation (W)
120
0
16
θ
360°
20
Resistive,
inductive loads
0
Resistive,
inductive loads
140
Resistive,
inductive loads
0
2
4
6
8
10
12
14
Average On-State Current (A)
Rev.1.00, Aug.20.2004, page 4 of 6
16
θ
120
360°
Resistive,
inductive loads
100
80
60
θ = 30° 90° 180°
40
60° 120° 270°
20
0
DC
0
2
4
6
8
10
12
14
Average On-State Current (A)
16
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
× 100 (%)
160
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 125°C
140
120
100
80
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Holding Current vs.
Junction Temperature
Turn-Off Time vs.
Junction Temperature
103
7
5
80
Typical Example
Turn-Off Time (µs)
70
3
2
102
7
5
3
2
Typical Example
60
50
40
30
Distribution
20
IT = 6A, –di/dt = 5A/µs,
VD = 300V, dv/dt = 20V/µs
VR = 50V
10
101
–60 –40 –20 0 20 40 60 80 100 120 140
0
0
20
40
60
80 100 120 140 160
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 5 of 6
× 100 (%)
Junction Temperature (°C)
103
7
5
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
× 100 (%)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
CR6PM-12
3
2
Typical Example
102
7
5
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (µs)
CR6PM-12
Package Dimensions
TO-220F
EIAJ Package Code
JEDEC Code

Conforms
Mass (g) (reference value)
Lead Material
2.0
Cu alloy
10.5 max
2.8
17
8.5
5.0
1.2
5.2
3.6
φ 3.2 ± 0.2
13.5 min
1.3 max
0.8
0.5
2.54
2.6
Symbol
4.5
2.54
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
100 Type name +A
Lead form
Plastic Magazine (Tube)
50 Type name +A – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
CR6PM-12A
CR6PM-12A-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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