HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) SCHEMATIC 0.050 (1.27) 0.100 (2.54) DIA. (CONNECTED TO CASE) COLLECTOR 3 2 1 3 0.038 (.97) NOM 0.046 (1.16) 0.036 (0.92) Ø0.021 (0.53) 3X BASE 2 45° NOTES: 1 EMITTER 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package. FEATURES • Hermetically sealed package • Wide reception angle 2001 Fairchild Semiconductor Corporation DS300305 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14C1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) L14C2 (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 50 50 7 300 600 Unit °C °C °C °C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14C1 On-State Collector Current L14C2 On-State Collector Current L14C2 Turn-On Time Turn-Off Time Saturation Voltage www.fairchildsemi.com (TA =25°C) (All measurements made under pulse conditions) TEST CONDITIONS SYMBOL MIN IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 20 V, Ee = 0 BVCEO BVEBO BVCBO ICEO θ IC(ON) IC(ON) IC(ON) ton toff VCE(SAT) 50 7.0 50 — Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 1.0 mW/cm2, VCE = 5 V(7,8) IC = 2 mA, VCC = 10 V, RL =100 Ω IC = 2 mA, VCC = 10 V, RL =100 Ω IC = 0.40 mA, Ee = 6.0 mW/cm2(7,8) 2 OF 4 TYP MAX UNITS — — — 100 0.40 V V V nA Degrees mA mA mA µs µs V 6/01/01 DS300305 ±40 .16 .08 .16 — — — 5 5 — HERMETIC SILICON PHOTOTRANSISTOR L14C1 Figure 1. Light Current vs. Collector to Emitter Voltage Figure 2. Normalized Light Current vs. Radiation 10 Ee = 20 mW/cm2 IL, NORMALIZED LIGHT CURRENT II, NORMALIZED LIGHT CURRENT 10 Ee = 10 mW/cm2 1.0 Ee = 5 mW/cm2 Ee = 2 mW/cm2 0.1 .01 0.1 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 10 1.0 1.0 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 0.1 .01 .01 100 1.0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) ton and toff, NORMALIZED TURN ON AND TURN OFF TIMES Figure 3. Dark Current vs. Temperature ID, DARK CURRENT (µA) 100 10 1.0 0.1 VCE = 20 V Ee = 0 mW/cm2 .01 0 25 50 75 100 125 150 Figure 4. Switching Speed vs. Output Current RL = 1KΩ 1.0 NORMALIZED TO: VCE = 10 V I C = 2 mA ton = toff = 5 µsec .01 1 RL = 10Ω 1.0 10 100 IC, OUTPUT CURRENT (mA) Figure 5. Spectral Response Figure 6. Angular Response Curve 130 0.9 120 0.8 110 100 0.7 90 RELATIVE OUTPUT (%) RELATIVE RESPONSE RL = 100Ω R L = 100 Ω 1.0 0.6 0.5 0.4 0.3 0.2 80 70 60 50 40 30 20 10 0.1 500 600 700 800 900 1000 -60 1100 6/01/01 -40 -20 0 20 40 60 θ, ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES) λ, WAVE LENGTH (NANOMETERS) DS300305 100 10 T, TEMPERATURE (°C) 0 10 Ee - TOTAL IRRADIANCE IN mW/cm2 1000 .001 L14C2 3 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 6/01/01 DS300305