Microsemi APTM120DA15G Boost chopper mosfet power module Datasheet

APTM120DA15G
Boost chopper
MOSFET Power Module
VDSS = 1200V
RDSon = 150mΩ typ @ Tj = 25°C
ID = 60A @ Tc = 25°C
Application
VBUS
•
•
•
CR1
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
Q2
•
G2
S2
0/VBUS
•
•
•
OUT
Benefits
•
•
•
•
•
S2
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
60
45
240
±30
175
1250
22
50
3000
Unit
V
A
V
mΩ
W
A
July, 2006
0/VBUS
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM120DA15G– Rev 1
VBUS
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
APTM120DA15G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
Min
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 30A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
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Unit
mΩ
V
nA
nF
nC
15
45
3.96
mJ
2.74
6.26
mJ
3.43
Min
1200
Tj = 25°C
Tj = 125°C
Tc = 70°C
ns
160
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 60A, R G = 1.2Ω
IF = 60A
VR = 800V
di/dt = 200A/µs
Max
µA
20
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 60A, R G = 1.2Ω
IF = 60A
IF = 120A
IF = 60A
Unit
480
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 60A
R G = 1.2Ω
VR=1200V
Typ
20.6
3.08
0.52
748
Max
500
3000
175
5
±250
96
Chopper diode ratings and characteristics
IRM
150
3
VGS = 10V
VBus = 600V
ID = 60A
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Typ
Typ
Max
250
750
Tj = 125°C
60
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
470
Tj = 25°C
1200
Tj = 125°C
4000
Unit
V
µA
A
2.5
V
ns
July, 2006
IDSS
Characteristic
nC
2–6
APTM120DA15G– Rev 1
Symbol
APTM120DA15G
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.1
0.9
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–6
APTM120DA15G– Rev 1
July, 2006
SP6 Package outline (dimensions in mm)
APTM120DA15G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
320
200
160
7V
6.5V
120
80
6V
40
5.5V
5
10
15
20
25
240
200
160
120
TJ=25°C
80
40
5V
0
0
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
280
ID, Drain Current (A)
T J=125°C
30
0
ID, DC Drain Current (A)
4
5
6
7
8
9
1.1
V GS=20V
0.9
0.8
60
50
40
30
20
10
0
0
40
80
120
160
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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July, 2006
RDS(on) Drain to Source ON Resistance
VGS=10V
1
3
70
Normalized to
VGS =10V @ 30A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
4–6
APTM120DA15G– Rev 1
I D, Drain Current (A)
VGS =15, 10 & 8V
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=30A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by RDS on
100
1ms
10
10ms
Single pulse
TJ=150°C
TC=25°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
I D=60A
TJ=25°C
12
10
V DS=240V
VDS=600V
8
V DS =960V
6
4
2
0
0
160
320
480
640
800
960
Gate Charge (nC)
July, 2006
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
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5–6
APTM120DA15G– Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120DA15G
APTM120DA15G
Delay Times vs Current
t d(off)
VDS=800V
RG=1.2Ω
T J=125°C
L=100µH
150
60
120
tr and tf (ns)
td(on) and td(off) (ns)
Rise and Fall times vs Current
80
180
V DS=800V
RG=1.2Ω
T J=125°C
L=100µH
90
60
40
tr
20
t d(on)
30
0
0
20
40
60
80
100
120
140
20
I D, Drain Current (A)
60
80
100
120
I D, Drain Current (A)
140
14
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
10
8
Eon
Switching Energy (mJ)
Switching Energy (mJ)
40
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
Eoff
6
4
2
0
20
40
60
80
100
120
12
10
V DS=800V
ID=60A
T J=125°C
L=100µH
Eoff
8
6
Eon
Eoff
4
2
0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75
140
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
250
200
Frequency (kHz)
tf
150
ZCS
V DS=800V
D=50%
R G=1.2Ω
T J=125°C
T C=75°C
100
50
ZVS
Hard
switching
0
15
25
35
45
ID, Drain Current (A)
55
T J=150°C
T J=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM120DA15G– Rev 1
July, 2006
5
100
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