LINER LT5516 800mhz to 1.5ghz direct conversion quadrature demodulator Datasheet

LT5516
800MHz to 1.5GHz Direct
Conversion Quadrature Demodulator
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DESCRIPTIO
FEATURES
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The LT ®5516 is an 800MHz to 1.5GHz direct conversion
quadrature demodulator optimized for high linearity receiver applications. It is suitable for communications
receivers where an RF or IF signal is directly converted into
I and Q baseband signals with bandwidth up to 260MHz.
The LT5516 incorporates balanced I and Q mixers, LO
buffer amplifiers and a precision, high frequency quadrature generator.
Frequency Range: 800MHz to 1.5GHz
High IIP3: 21.5dBm at 900MHz
High IIP2: 52dBm
Noise Figure: 12.8dB at 900MHz
Conversion Gain: 4.3dB at 900MHz
I/Q Gain Mismatch: 0.2dB
Shutdown Mode
16-Lead QFN 4mm × 4mm Package
with Exposed Pad
In an RF receiver, the high linearity of the LT5516 provides
excellent spur-free dynamic range, even with fixed gain
front end amplification. This direct conversion receiver
can eliminate the need for intermediate frequency (IF)
signal processing, as well as the corresponding requirements for image filtering and IF filtering. Channel filtering
can be performed directly at the outputs of the I and Q
channels. These outputs can interface directly to channelselect filters (LPFs) or to a baseband amplifier.
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APPLICATIO S
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Cellular/PCS/UMTS Infrastructure
High Linearity Direct Conversion I/Q Receiver
High Linearity I/Q Demodulator
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATIO
I/Q Output Power, IM3 vs
RF Input Power
5V
BPF
LNA
VCC
RF +
LT5516
IOUT+
20
LPF
VGA
0°
RF –
0
IOUT–
DSP
LO INPUT
LO +
+
QOUT
0°/90°
LO –
ENABLE
LPF
VGA
90°
QOUT–
EN
Figure 1. High Signal-Level I/Q Demodulator for Wireless Infrastructure
POUT, IM3 (dBm/TONE)
BPF
POUT
–20
–40
IM3
–60
–80
5516 F01
–100
–18
–14
VCC = 5v
TA = 25°C
PLO = –10dBm
fLO = 901MHz
fRF1 = 899.9MHz
fRF2 = 900.1MHz
–10
–6
–2
RF INPUT POWER (dBm)
2
6
5516 TA01
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LT5516
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ABSOLUTE
AXI U RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
NUMBER
QOUT –
QOUT +
IOUT +
IOUT –
TOP VIEW
Power Supply Voltage ............................................ 5.5V
Enable Voltage ...................................................... 0, VCC
LO + to LO – Differential Voltage ............................... ±2V
(+10dBm Equivalent)
+
–
RF to RF Differential Voltage ................................ ±2V
(+10dBm Equivalent)
Operating Ambient Temperature ..............–40°C to 85°C
Storage Temperature Range ................. – 65°C to 125°C
Maximum Junction Temperature .......................... 125°C
16 15 14 13
GND 1
RF +
RF
–
LT5516EUF
12 VCC
LO –
2
11
3
10 LO +
GND 4
6
7
8
VCC
VCM
EN
VCC
9
5
VCC
UF PART
MARKING
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
5516
EXPOSED PAD IS GROUND
(MUST BE SOLDERED TO PCB)
TJMAX = 125°C, θJA = 38°C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
AC ELECTRICAL CHARACTERISTICS
TA = 25°C. VCC = 5V, EN = high, fRF1 = 899.9MHz, fRF2 = 900.1MHz,
fLO = 901MHz, PLO = –10dBm unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2)
PARAMETER
CONDITIONS
MIN
Frequency Range
LO Power
Conversion Gain
Voltage Gain, Load Impedance = 1k
Conversion Gain Variation vs Temperature
– 40°C to 85°C
Noise Figure
2
TYP
MAX
UNITS
0.8 to 1.5
GHz
–13 to – 2
dBm
4.3
dB
0.01
dB/°C
R1 = 8.2Ω
R1 = 3.3Ω, PLO = –5dBm
11.4
12.8
dB
dB
Input 3rd Order Intercept
2-Tone, –10dBm/Tone,
∆f = 200kHz
R1 = 8.2Ω
R1 = 3.3Ω, PLO = –5dBm
17.0
21.5
dBm
dBm
Input 2nd Order Intercept
Input = –10dBm
R1 = 8.2Ω
R1 = 3.3Ω, PLO = –5dBm
46.0
52.0
dBm
dBm
Input 1dB Compression
R1 = 8.2Ω
6.6
dBm
260
MHz
Baseband Bandwidth
I/Q Gain Mismatch
(Note 4)
I/Q Phase Mismatch
(Note 4)
Output Impedance
Differential
0.2
1
0.7
dB
degree
120
Ω
LO to RF Leakage
– 65
dBm
RF to LO Isolation
57
dB
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LT5516
DC ELECTRICAL CHARACTERISTICS
PARAMETER
TA = 25°C. VCC = 5V unless otherwise noted.
CONDITIONS
Supply Voltage
TYP
4
Supply Current
Shutdown Current
MIN
80
117
EN = Low
Turn-On Time
Turn-Off Time
EN = High (On)
MAX
UNITS
5.25
V
150
mA
20
µA
120
ns
650
ns
1.6
V
EN = Low (Off)
EN Input Current
VENABLE = 5V
2
Output DC Offset Voltage
(IOUT+ – IOUT–, QOUT+ – QOUT–)
fLO = 901MHz, PLO = –10dBm
1
Output DC Offset Variation vs Temperature
– 40°C to 85°C
20
1.3
V
25
mV
µA
µV/°C
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Tests are performed as shown in the configuration of Figure 2 with
R1 = 8.2Ω, unless otherwise noted.
Note 3: Specifications over the – 40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
control.
Note 4: Measured at PRF = –10dBm and output frequency = 1MHz.
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 900MHz operation as shown in Figure 2)
Conv Gain, NF, IIP3 vs
RF Input Frequency
Supply Current vs Supply Voltage
25
R1 = 8.2Ω
140
TA = 85°C
120
TA = 25°C
100
TA = – 40°C
GAIN (dB), NF (dB), IIP3 (dBm)
SUPPLY CURRENT (mA)
160
80
60
20
IIP3
15
NF
10
5
40
4
4.5
5
SUPPLY VOLTAGE (V)
PLO = –10dBm
TA = 25°C
VCC = 5V
R1 = 8.2Ω
CONV. GAIN
0
800
5.5
900
1000
1100
1200
RF INPUT FREQUENCY (MHz)
5516 G01
5516 G02
I/Q Output Power, IM3 vs
RF Input Power
IIP2 vs RF Input Frequency
IIP2 (dBm)
60
20
PLO = –10dBm
TA = 25°C
VCC = 5V
R1 = 8.2Ω
0
POUT, IM3 (dBm/TONE)
70
50
40
fLO = 901MHz
VCC = 5V
R1 = 8.2Ω
OUTPUT POWER
–20
IM3
–40
TA = – 40°C
–60
TA = 85°C
30
20
800
1300
TA = 25°C
–80
900
1000
1100
1200
RF INPUT FREQUENCY (MHz)
–100
–18
1300
5516 G03
–14
–10
–6
–2
RF INPUT POWER (dBm)
2
6
5516 G04
I/Q Gain Mismatch vs
RF Input Frequency
1.2
GAIN MISMATCH (dB)
0.8
TA = – 40°C
0.4
0
TA = 85°C
TA = 25°C
–0.4
–0.8
PLO = –10dBm
fBB = 1MHz
VCC = 5V
R1 = 8.2Ω
–1.2
800
900 1000 1100 1200 1300 1400 1500
RF INPUT FREQUENCY (MHz)
5516 G05
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 900MHz operation as shown in Figure 2)
I/Q Phase Mismatch vs
RF Input Frequency
NF vs LO Input Power
6
18
16
fRF = 1300MHz
14
fRF = 1100MHz
12
fRF = 900MHz
TA = – 40°C
2
0
NF (dB)
PHASE MISMATCH (DEG)
4
TA = 25°C
10
TA = 85°C
–2
8
–4
PLO = –10dBm
fBB = 1MHz
VCC = 5V
R1 = 8.2Ω
–6
800
TA = 25°C
VCC = 5V
R1 = 8.2Ω
6
4
–14
900 1000 1100 1200 1300 1400 1500
RF INPUT FREQUENCY (MHz)
–12
–10
–8
–6
–4
LO INPUT POWER (dBm)
5516 G07
5516 G06
Conv Gain, IIP3 vs LO Input Power
20
IIP2 vs LO Input Power
70
TA = 85°C
TA = – 40°C
IIP3
8
TA = 85°C
IIP2 (dBm)
12
fLO = 901MHz
VCC = 5V
R1 = 8.2Ω
CONV GAIN
TA = 25°C
55
50
TA = – 40°C
45
TA = 25°C
TA = – 40°C
40
4
0
–14
fLO = 901MHz
VCC = 5V
R1 = 8.2Ω
60
TA = 25°C
TA = 85°C
–12
35
–10
–8
–6
–4
LO INPUT POWER (dBm)
30
–14
–2
5516 G08
–12
–10
–8
–6
–4
LO INPUT POWER (dBm)
–2
5516 G09
Conv Gain, IIP3 vs Supply Voltage
20
TA = 85°C
CONV GAIN (dB), IIP3 (dBm)
CONV GAIN (dB), IIP3 (dBm)
65
16
–2
16
TA = – 40°C
IIP3
12
TA = 25°C
fLO = 901MHz
PLO = –10dBm
R1 = 8.2Ω
8
CONV GAIN
TA = 25°C
TA = – 40°C
4
TA = 85°C
0
4
4.5
5
SUPPLY VOLTAGE (V)
5.5
5516 G10
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 900MHz operation as shown in Figure 2)
LO-RF Leakage vs LO Input Power
–55
TA = 25°C
VCC = 5V
R1 = 8.2Ω
fRF = 1100MHz
70
RF-LO ISOLATION (dB)
–60
LO-RF LEAKAGE (dBm)
RF-LO Isolation vs RF Input Power
80
fRF = 900MHz
–65
fRF = 1300MHz
–70
fRF = 1100MHz
–75
fRF = 1300MHz
60
fRF = 900MHz
50
40
TA = 25°C
VCC = 5V
R1 = 8.2Ω
30
–80
–14
–12
–10
–8
–6
–4
LO INPUT POWER (dBm)
20
–15
–2
–10
–5
0
5
RF INPUT POWER (dBm)
10
5516 G12
5516 G11
RF, LO Port Return Loss vs
Frequency
Conv Gain vs Baseband Frequency
0
8
RF
RETURN LOSS (dB)
–5
6
CONV GAIN (dB)
–10
LO
–15
–20
–25
TA = 25°C
VCC = 5V
R1 = 8.2Ω
–30
0
0.5
TA = – 40°C
4
TA = 85°C
2
TA = 25°C
0
fLO = 1000MHz
VCC = 5V
R1 = 8.2Ω
–2
1
1.5
FREQUENCY (GHz)
2
–4
2.5
0.1
1
10
100
BASEBAND FREQUENCY (MHz)
1000
5516 G13
5516 G14
Conv Gain, NF, IIP3 vs R1
TA = 25°C
VCC = 5V
Supply Current, IIP2 vs R1
150
PLO = –5dBm
fLO = 901MHz
SUPPLY CURRENT (mA), IIP2 (dBm)
GAIN (dB), NF (dB), IIP3 (dBm)
25
20
IIP3
15
NF
10
CONV GAIN
5
0
130
SUPPLY CURRENT
110
90
70
IIP2
50
30
3
4
5
6
R1 (Ω)
7
8
9
5516 G15
PLO = –5dBm
fLO = 901MHz
TA = 25°C
VCC = 5V
3
4
5
6
R1 (Ω)
7
8
9
5516 G16
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LT5516
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PI FU CTIO S
GND (Pins 1, 4): Ground Pin.
RF +, RF – (Pins 2, 3): Differential RF Input Pins. These
pins are internally biased to 1.54V. They must be driven
with a differential signal. An external matching network is
required for impedance transformation.
VCC (Pins 5, 8, 9, 12): Power Supply Pins. These pins
should be decoupled using 1000pF and 0.1µF capacitors.
VCM (Pin 6): Common Mode and DC Return for the I-Mixer
and Q-Mixer. An external resistor must be connected
between this pin and ground to set the dc bias current of
the I/Q demodulator.
EN (Pin 7): Enable Pin. When the input voltage is higher
than 1.6V, the circuit is completely turned on. When the
input voltage is less than 1.3V, the circuit is turned off.
LO +, LO – (Pins 10, 11): Differential Local Oscillator Input
Pins. These pins are internally biased to 2.44V. They can
be driven single-ended by connecting one to an AC ground
through a 1000pF capacitor. However, differential input
drive is recommended to minimize LO feedthrough to the
RF input pins.
QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output
Pins of the Q-Channel. The internal DC bias voltage is VCC
–0.68V for each pin.
IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output
Pins of the I-Channel. The internal DC bias voltage is VCC
–0.68V for each pin.
GROUND (Pin 17, Backside Contact): Ground Return for
the Entire IC. This pin must be soldered to the printed
circuit board ground plane.
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BLOCK DIAGRA
VCC
VCC
VCC
VCC
5
8
9
12
I-MIXER
LPF
16 IOUT+
15 IOUT–
RF AMP
RF + 2
LO BUFFERS
0°/90°
RF – 3
LPF
14 QOUT+
VCM 6
13 QOUT–
Q-MIXER
BIAS
7
EN
1
4
GND GND
17
10
11
LO +
LO –
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LT5516
TEST CIRCUITS
J3
J5
IOUT–
QOUT+
J4
J6
RF
GND
L1
33nH
4
RF +
RF
LO –
L4
27nH
LO +
VCC
C5
1nF
VCC
EN
GND
C1
1nF
LO
VCC
LT5516
–
VCM
3
6
1
VCC
2
T2
LDB31900M20C-416 J2
QOUT –
IOUT +
T1
J1 LDB31900M20C-416
IOUT –
QOUT–
QOUT +
IOUT+
6
1
2
4
3
C2
1nF
VCC
R3 1k
EN
C7
1nF
REFERENCE
DESIGNATION
C1,C2,C5,C6,C7
C3
C4
L1
L4
R1
R2
R3
T1, T2
R1
8.2Ω
VALUE
1nF
0.1µF
2.2µF
33nH
27nH
8.2Ω
100k
1k
1:4
R2
100k
SIZE
0402
0402
3216
0402
0402
0402
0402
0402
C6
1nF
C3
0.1µF
C4
2.2µF
PART NUMBER
AVX 04025C102JAT
AVX 0402ZD104KAT
AVX TPSA225M010R1800
Murata LQP10A
Murata LQP10A
Murata LDB31900M20C-416
5516 F02
Figure 2. 900MHz Evaluation Circuit Schematic
Figure 3. Component Side Silkscreen of Evaluation Board
Figure 4. Component Side Layout of Evaluation Board
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LT5516
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APPLICATIO S I FOR ATIO
The LT5516 is a direct I/Q demodulator targeting high
linearity receiver applications, including wireless infrastructure. It consists of an RF amplifier, I/Q mixers, a
quadrature LO carrier generator and bias circuitry.
The RF signal is applied to the inputs of the RF amplifier
and is then demodulated into I/Q baseband signals using
quadrature LO signals. The quadrature LO signals are
internally generated by precision 90° phase shifters. The
demodulated I/Q signals are lowpass filtered internally
with a –3dB bandwidth of 265MHz. The differential outputs of the I-channel and Q-channel are well matched in
amplitude; their phases are 90° apart.
RF Input Port
Differential drive is highly recommended for the RF inputs
to minimize the LO feedthrough to the RF port and to
maximize gain. (See Figure 2.) A 1:4 transformer is used
on the demonstration board for wider bandwidth matching. To assure good NF and maximize the demodulator
gain, a low loss transformer is employed. Shunt inductor
L1, with high resonance frequency, is required for proper
impedance matching. Single-ended to differential conversion can also be implemented using narrow band, discrete
L-C circuits to produce the required balanced waveforms
at the RF + and RF – inputs.The differential impedance of
the RF inputs is listed in Table 1.
Table 1. RF Input Differential Impedance
FREQUENCY
(MHz)
DIFFERENTIAL INPUT
DIFFERENTIAL S11
An external resistor (R1) is connected to Pin 6 (VCM) to set
the optimum DC current for I/Q mixer linearity. The IIP3 can
be improved with a smaller R1 at a price of slightly higher
NF and ICC. The RF performances of NF, IIP3 and IIP2 vs
R1 are shown in the Typical Performance Characteristics.
LO Input Port
The LO inputs (Pins 10,11) should be driven differentially
to minimize LO feedthrough to the RF port. This can be
accomplished by means of a single-ended to differential
conversion as shown in Figure 2. L4, the 27nH shunt
inductor, serves to tune out the capacitive component of
the LO differential input. The resonance frequency of the
inductor should be greater than the operating frequency.
A 1:4 transformer is used on the demo board to match the
200Ω on-chip resistance to a 50Ω source. Figure 6 shows
the LO input equivalent circuit and the associated matching network.
Single-ended to differential conversion at the LO inputs
can also be implemented using a discrete L-C circuit to
produce a balanced waveform without a transformer.
An alternative solution is a simple single-ended termination. However, the LO feedthrough to RF may be degraded.
Either LO + or LO – input can be terminated to a 50Ω source
with a matching circuit, while the other input is connected
to ground through a 100pF bypass capacitor.
Table 2 shows the differential input impedance of the LO
input port.
IMPEDANCE (Ω)
MAG
ANGLE (˚)
800
258.7-j195.2
0.779
–16.9
Table 2. LO Input Differential Impedance
900
239.9-j181.8
0.766
–18.3
FREQUENCY
DIFFERENTIAL INPUT
DIFFERENTIAL S11
1000
224.1-j170.0
0.753
–19.6
(MHz)
IMPEDANCE (Ω)
MAG
ANGLE (˚)
1100
210.9-j160.0
0.740
–20.9
800
134.7-j65.1
0.552
–22.5
128.5-j66.7
0.517
–25.4
1200
200.7-j152.1
0.729
–21.9
900
1300
191.4-j144.7
0.718
–23.0
1000
121.8-j67.5
0.512
–28.5
1400
183.2-j138.3
0.707
–24.0
1100
115.7-j67.2
0.505
–31.8
–24.9
1200
109.3-j66.1
0.498
–35.0
1500
176.5-j133.1
0.698
1300
103.0-j64.4
0.490
–38.3
The RF+ and RF– inputs (Pins 2, 3) are internally biased at
1400
96.7-j62.1
0.480
–42.0
2.44V. These two pins should be DC blocked when connected to ground or other matching components. The RF
input equivalent circuit is shown in Figure 5.
1500
91.0-j59.4
0.469
–45.8
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LT5516
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APPLICATIO S I FOR ATIO
I-Channel and Q-Channel Outputs
Each of the I-channel and Q-channel outputs is internally
connected to VCC though a 60Ω resistor. The output dc
bias voltage is VCC – 0.68V. The outputs can be DC coupled
or AC coupled to the external loads. The differential output
impedance of the demodulator is 120Ω in parallel with a
5pF internal capacitor, forming a lowpass filter with a
–3dB corner frequency at 265MHz. RLOAD (the singleended load resistance) should be larger than 600Ω to
assure full gain. The gain is reduced by 20 • log(1 + 120Ω/
RLOAD) in dB when the differential output is terminated by
RLOAD. For instance, the gain is reduced by 6.85dB when
each output pin is connected to a 50Ω load (100Ω differential load). The output should be taken differentially (or
by using differential-to-single-ended conversion) for best
RF performance, including NF and IM2.
The phase relationship between the I-channel output signal and Q-channel output signal is fixed. When the LO
input frequency is larger (or smaller) than the RF input
frequency, the Q-channel outputs (QOUT+, QOUT–) lead (or
lag) I-channel outputs (IOUT+, IOUT–) by 90°.
When AC output coupling is used, the resulting highpass
filter’s –3dB roll-off frequency is defined by the R-C
constant of the blocking capacitor and RLOAD, assuming
RLOAD > 600Ω.
Care should be taken when the demodulator’s outputs are
DC coupled to the external load, to make sure that the I/Q
mixers are biased properly. If the current drain from the
outputs exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no
more than 13mA when the outputs are connected to an
external load with a DC voltage higher than VCC – 0.68V.
The I/Q output equivalent circuit is shown in Figure 7.
LT5516
VCC
J1
T1
LDB31900M20C-416
RF
2
2
3
6
1
RF +
L1
33nH
1.54V
1k
4
3
RF
–
1.54V
C1
1nF
5516 F05
Figure 5. RF Input Equivalent Circuit with External Matching
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LT5516
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APPLICATIO S I FOR ATIO
VCC
VCC
60Ω
J2
LO
10
2
3
6
1
60Ω
60Ω
60Ω
IOUT+
T2
LDB31900M20C-416
LO
+
2.44V
L4
27nH
IOUT–
5pF
200Ω
4
11
LO
16
15
+
QOUT
–
QOUT–
2.44V
C2
1nF
14
13
5pF
5516 F06
5516 F07
Figure 6. LO Input Equivalent Circuit with External Matching
Figure 7. I/Q Output Equivalent Circuit
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PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.15 ± 0.05
2.90 ± 0.05 (4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
4.00 ± 0.10
(4 SIDES)
0.75 ± 0.05
R = 0.115
TYP
0.55 ± 0.20
15
16
PIN 1
TOP MARK
1
2.15 ± 0.10
(4-SIDES)
2
(UF) QFN 0802
0.200 REF
0.00 – 0.05
0.30 ± 0.05
0.65 BSC
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
4. EXPOSED PAD SHALL BE SOLDER PLATED
5516f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LT5516
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
RF Power Controllers
LTC1757A
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1758
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1957
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC4400
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW
LTC4401
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW
LTC4403
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones
LT5500
RF Front End
Dual LNA gain Setting +13.5dB/–14dB at 2.5GHz, Double-Balanced Mixer,
1.8V ≤ VSUPPLY ≤ 5.25V
LT5502
400MHz Quadrature Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range
LT5503
1.2GHz to 2.7GHz Direct IQ Modulator and
Up Converting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply
LTC5505
300MHz to 3.5GHz RF Power Detector
>40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
LT5506
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain
LTC5507
100kHz to 1GHz RF Power Detector
48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, SC70 Package
LT5511
High Signal Level Up Converting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
High Signal Level Down Converting Mixer
DC-3GHz, 20dBm IIP3, Integrated LO Buffer
5516f
12
Linear Technology Corporation
LT/TP 0503 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2003
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