AD AD8597 Single, ultralow distortion, ultralow noise op amp Datasheet

Preliminary Technical Data
FEATURES
Low noise: 1 nV/√Hz at 1 kHz
Low distortion: −105 dB THD @ 20 kHz
<80 nV p-p input noise, 0.1 Hz to 10 Hz
Slew rate: 16 V/μs
Wide bandwidth: 10 MHz
Supply current: 4.7 mA typical
Low offset voltage: 10 μV typical
CMRR: 120 dB
Unity-gain stable
±15 V operation
APPLICATIONS
Professional audio preamplifiers
ATE/precision testers
Imaging systems
Medical/physiological measurements
Precision detectors/instruments
Precision data conversion
Single, Ultralow Distortion,
Ultralow Noise Op Amp
AD8597
PIN CONFIGURATION
Figure 1. 8-Lead SOIC (R-8)
8 NC
NC 1
-IN 2
+IN 3
V- 4
TO P VIEW
(Not to Scale)
7 V+
6 OUT
5 NC
NC = NO CONNECT
Figure 2. 8-LFCSP (3x3)(CP-8)
GENERAL DESCRIPTION
The AD8597 is a single, very low noise, low distortion operational amplifier ideal for use as a preamplifier. The low noise of
1 nV/√Hz and low harmonic distortion of −105 dB (or better)
at audio bandwidths give the AD8597 the wide dynamic range
necessary for preamps in audio, medical, and instrumentation
applications. The AD8597’s excellent slew rate of 16 V/μs and
10 MHz gain bandwidth make it highly suitable for medical
applications. The low distortion and settling time of the AD8597
make it ideal for buffering of high resolution data converters.
The AD8597 is available in an 8-Lead SOIC and 8-Lead LFCSP
(3x3) packages and is specified over a −40°C to +125°C
temperature range.
Rev. PrA
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Fax: 781.461.3113
©2008 Analog Devices, Inc. All rights reserved.
AD8597
Preliminary Technical Data
SPECIFICATIONS
VS = ±15 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified.
Table 1.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Symbol
Conditions
Min
VOS
Typ
Max
Unit
10
120
180
μV
μV
0.8
2.2
μV/°C
25
180
300
180
220
+12.5
nA
nA
nA
nA
V
dB
−40°C ≤ TA ≤ +125°C
Offset Voltage Drift
ΔVOS/ΔT
Input Bias Current
IB
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
Input Offset Current
IOS
Input Voltage Range
Common-Mode Rejection Ratio
IVR
CMRR
Large Signal Voltage Gain
AVO
Input Capacitance
CDIFF
CCM
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Short Circuit Current
Closed-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current per Amplifier
VOH
VOL
ISC
ZOUT
PSRR
25
−40°C ≤ TA ≤ +125°C
VDD = ±15 V
−12.5 V ≤ VCM ≤ +12.5 V
−12.5
120
−40°C ≤ TA ≤ +125°C
RL ≥ 600 Ω, VO = −11 V to +11 V
−40°C ≤ TA ≤ +125°C
115
110
106
140
4.8
4.5
RL = 600 Ω
−40°C ≤ TA ≤ +125°C
RL = 2 kΩ
−40°C ≤ TA ≤ +125°C
RL = 600 Ω
−40°C ≤ TA ≤ +125°C
RL = 2 kΩ
−40°C ≤ TA ≤ +125°C
13.1
12.8
13.5
13.2
ISY
13.7
−13.2
−13.5
Settling Time
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Peak-to-Peak Noise
Voltage Noise Density
Current Noise
Total Harmonic Distortion + Noise
SR
ts
GBP
φM
en p-p
en
THD + N
120
118
140
4.7
AV = −1, RL = 2 kΩ
AV = 1, RL = 2 kΩ
To 0.01%, step = 10 V
16.8
15
2
10
68
0.1 Hz to 10 Hz
f = 1 kHz
f = 10 Hz
f = 1 kHz
G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V
G = 1, RL ≥ 1 kΩ, f = 20 kHz, VRMS = 3 V
76
1.07
Rev. A | Page 2 of 3
−12.9
−12.8
−13.4
−13.3
±52
5
At 1 MHz, AV = 1
VDD = ±18 V to ±4.5 V
−40°C ≤ TA ≤ +125°C
13.4
−40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
dB
dB
dB
pf
pf
116
1.5
−108
−105
5.7
6.75
V
V
V
V
V
V
V
V
mA
Ω
dB
dB
mA
mA
V/μs
V/μs
μs
MHz
Degrees
1.15
1.5
nV
nV/√Hz
nV/√Hz
pA/√Hz
dB
dB
Preliminary Technical Data
AD8597
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 2.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage
Output Short-Circuit to GND
Storage Temperature Range
Operating Temperature Range
Lead Temperature Range (Soldering 60 sec)
Junction Temperature
Rating
±18 V
GND to VDD
±1 V
Indefinite
−65°C to +150°C
−40°C to +125°C
300°C
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type
8-Lead LFCSP (CP-8)
8-Lead SOIC (R-8)
θJA
TBD
120
θJC
TBD
36
Unit
°C/W
°C/W
POWER SEQUENCING
The op amp supplies must be established simultaneously with,
or before, any input signals are applied.
If this is not possible, the input current must be limited to 10 mA.
ESD CAUTION
Rev. PrA | Page 3 of 3
PR07669-0-7/08(PrA)
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