Linear LS303 High voltage super-beta monolithic dual npn transistor Datasheet

LS301
LS302
LS303
HIGH VOLTAGE
SUPER-BETA MONOLITHIC
DUAL NPN TRANSISTORS
Linear Integrated Systems
FEATURES
hFE ≥ 2000 @ 1.0µA TYP.
VERY HIGH GAIN
LOW OUTPUT CAPACITANCE
COBO ≤2.0pF
TIGHT VBE MATCHING
|VBE1-VBE2| = 0.2mV TYP.
HIGH fT
100MHz
C1
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Collector Current
5mA
IC
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
E1
3
5
E2
B1 2
ONE SIDE
250mW
2.3mW/°C
6 B2
1
C1
-65° to +200°C
+150°C
B1
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
C2
BOTH SIDES
500mW
4.3mW/°C
E1
E2
7
C2
B2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS301 LS302
Collector to Base Voltage
18
35
BVCBO
LS303
10
MIN.
BVCEO
Collector to Emitter Voltage
18
35
10
MIN.
V
IC = 10µA
BVEBO
Emitter-Base Breakdown Voltage
6.2
6.2
6.2
MIN.
V
IE = 10µA
BVCCO
Collector to Collector Voltage
100
100
100
MIN.
V
IC = 10µA
IE = 0
hFE
DC Current Gain
2000
1000
2000
TYP.
IC = 1µA
VCE = 5V
hFE
DC Current Gain
2000
1000
2000
MIN.
IC = 10µA
VCE = 5V
hFE
DC Current Gain
2000
1000
2000
TYP.
IC = 500µA
VCE = 5V
0.5
0.5
0.5
MAX.
IC = 1mA
IB = 0.1mA
VCE(SAT) Collector Saturation Voltage
UNITS
V
V
CONDITIONS
IC = 10µA
IE = 0
IB = 0
IC = 0
NOTE 2
ICBO
Collector Cutoff Current
100
100
100
MAX.
pA
IE = 0
VCB = NOTE 3
IEBO
Emitter Cutoff Current
0.2
0.2
0.2
MAX.
pA
IE = 0
VEB = 3V
COBO
Output Capacitance
2
2
2
MAX.
pF
IE = 0
VCB = 1V
CC1C2
Collector to Collector Capacitance
2
2
2
MAX.
pF
VCC = 0
IC1C2
Collector to Collector Leakage Current
0.5
0.5
0.5
MAX.
nA
VCC = NOTE 4
fT
Current Gain Bandwidth Product
100
100
100
MIN.
MHz
IC = 200µA
VCE = 5V
NF
Narrow Band Noise Figure
3
3
3
MAX.
dB
IC = 10µA
VCE = 3V
BW = 200Hz
f = 1KHz
RG = 10 KΩ
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Base Emitter Voltage Differential
|VBE1-VBE2|
∆|(VBE1-VBE2)|/°C
|IB1- IB2|
LS301
0.2
1
LS303
0.2
1
UNITS
TYP.
mV
MAX.
mV
CONDITIONS
IC = 10 µA
Base Emitter Voltage Differential
1
1
1
TYP.
µV/°C
Change with Temperature
5
5
5
MAX.
µV/°C
Base Current Differential
hFE1/hFE2
LS302
0.2
1
DC Current Gain Differential
TO-71
0.030
MAX.
0.150
0.115
6 LEADS
0.500 MIN.
0.019 DIA.
0.016
+125°C
0.5
1
0.5
TYP.
nA
IC = 10µA
VCE = 1V
5
1.5
MAX.
nA
IC = 10µA
VCE = 5V
5
5
5
TYP.
%
IC = 10µA
VCE = 5V
TO-78
0.230
DIA.
0.209
VCE = 5V
to
1
P-DIP
Six Lead
0.195
DIA.
0.175
IC = 10 µA
T = -55°C
VCE = 5V
0.305
0.335
0.320 (8.13)
0.290 (7.37)
0.335
0.370
MAX.
0.040 0.165
0.185
0.016
0.019
DIM. A
MIN. 0.500
0.016
0.021
DIM. B
SEATING
PLANE
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
5
6
1
8
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
45°
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.028
0.034
0.188 (4.78)
0.197 (5.00)
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µAmps.
3. For LS301 & LS302: VCB= 10V; for LS303: VCB = 5V.
4. For LS301 & LS302: VCC= ±80V; for LS303: VCC = ±20V.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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