ASI BLV57 Npn silicon rf power transistor Datasheet

BLV57
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV57 is Designed for use
as push-pull amplifier, primarily in
linear UHF TV transmitting
Applications.
PACKAGE STYLE .400 8L FLG
C
D
A
B
F U LL R
FEATURES:
G
• Input Matching Network
• Common emitter
• Omnigold™ Metalization System
with eutectic die bonding
E
.19 25
.125
K
2.0 A
PDISS
77 W @ TC = 25 C
.360 / 9.14
TSTG
-65 °C to +150 °C
θJC
2.27 °C/W
.130 / 3.30
F
.380 / 9.65
.390 / 9.91
G
.735 / 18 .6 7
.765 / 19 .4 3
H
.645 / 16 .3 8
.655 / 16 .6 4
I
.895 / 22 .7 3
.905 / 22 .9 9
J
.420 / 10 .6 7
.430 / 10 .9 2
K
.003 / 0.08
.007 / 0.18
L
.120 / 3.05
.130 / 3.30
M
.159 / 4.04
.175 / 4.45
.395 / 10 .0 3
.405 / 10 .2 9
.280 / 7.11
N
O
CHARACTERISTICS
ORDER CODE: ASI10646
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
.075 / 1.91
.065 / 1.65
E
-65 °C to +200 °C
.125 / 3.18
.115 / 2.92
D
TJ
inche s / m m
.030 / 0.76
C
27 V
M A X IM U M
inche s / m m
B
VCE
J
M IN IM UM
A
50 V
I
N
D IM
VCESM
4 x .0 60 R
H
L M
MAXIMUM RATINGS
IC
O
F
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 25 mA
27
V
BVCES
IC = 10 mA
50
V
BVEBO
IE = 5.0 mA
3.5
V
ICES
VE = 27 V
hFE
VCE = 25 V
IC = 850 mA
VCB = 25 V
IE = 1.7 A
2.5
VCB = 25 V
IE = 850 mA
2.5
fT
PG
IMD1
VCE = 25 V
POUT = 6.0 W
10
IC = 850 mA
---
15
f = 860 MHz
8.0
-60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
GHz
dB
dBc
REV. B
1/1
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