ON MJW21193G 16 a complementary silicon power transistors 250 v, 200 w Datasheet

MJW21193 (PNP)
MJW21194 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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• Total Harmonic Distortion Characterized
• High DC Current Gain −
•
•
16 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 V, 200 W
hFE = 20 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current − Continuous
Collector Current − Peak (Note 1)
IC
16
30
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
Watts
W/°C
TJ, Tstg
− 65 to
+150
°C
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
RθJC
0.7
°C/W
Thermal Resistance,
Junction to Ambient
RθJA
40
°C/W
Operating and Storage Junction
Temperature Range
TO−247
CASE 340L
STYLE 3
1 2 3
MARKING DIAGRAM
MJW2119x
AYWWG
THERMAL CHARACTERISTICS
Characteristic
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
1 BASE
2 COLLECTOR
x
A
Y
WW
G
Device
Package
Shipping
MJW21193
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
MJW21194
MJW21194G
July, 2005 − Rev. 2
1
= 3 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
MJW21193G
© Semiconductor Components Industries, LLC, 2005
3 EMITTER
Publication Order Number:
MJW21193/D
MJW21193 (PNP) MJW21194 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
250
−
−
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
−
−
100
μAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
−
−
100
μAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
−
100
μAdc
4.0
2.25
−
−
−
−
20
8
−
−
70
−
−
−
2.2
−
−
−
−
1.4
4
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
hFE
unmatched
hFE
matched
−
0.8
−
−
0.08
−
fT
4
−
−
MHz
Cob
−
−
500
pF
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
%
6.5
6.0
5.5
NPN MJW21194
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
PNP MJW21193
VCE = 10 V
5V
5.0
4.5
4.0
3.5
3.0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
10
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
10
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
−25 °C
TJ = 100°C
25°C
100
−25 °C
VCE = 20 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW21193
NPN MJW21194
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
−25 °C
TJ = 100°C
25°C
100
−25 °C
VCE = 5 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 5. DC Current Gain, VCE = 5 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 6. DC Current Gain, VCE = 5 V
PNP MJW21193
NPN MJW21194
30
35
1.5 A
25
20
IB = 2 A
I C, COLLECTOR CURRENT (A)
I C, COLLECTOR CURRENT (A)
100
Figure 3. DC Current Gain, VCE = 20 V
1000
1A
15
0.5 A
10
5.0
IB = 2 A
30
1.5 A
25
1A
20
15
0.5 A
10
5.0
TJ = 25°C
0
1.0
10
IC COLLECTOR CURRENT (AMPS)
0
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TJ = 25°C
0
25
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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3
25
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
3.0
1.4
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
TJ = 25°C
IC/IB = 10
2.5
2.0
1.5
1.0
VBE(sat)
0.5
VCE(sat)
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
IC/IB = 10
1.2
1.0
VBE(sat)
0.8
0.6
0.4
0.2
VCE(sat)
0
0.1
100
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
NPN MJW21194
10
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
PNP MJW21193
TJ = 25°C
1.0
VCE = 20 V (SOLID)
0.1
0.1
10
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
PNP MJW21193
NPN MJW21194
100
10 mSec
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
0.1
0.1
100
100
100 mSec
1 Sec
1.0
0.1
10
1.0
VCE = 5 V (DASHED)
1.0
100
1.0
10
100
10 mSec
10
1 Sec
1.0
0.1
1000
100 mSec
1.0
10
100
1000
VCE, COLLECTOR EMITTER (VOLTS)
VCE, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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4
MJW21193 (PNP) MJW21194 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
10000
10000
TC = 25°C
C, CAPACITANCE (pF)
Cib
1000
Cob
100
0.1
1.0
10
100
0.1
100
Cib
1000
f(test) = 1 MHz)
Cob
f(test) = 1 MHz)
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW21193 Typical Capacitance
Figure 16. MJW21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
TC = 25°C
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 17. Typical Total Harmonic Distortion
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5
100
MJW21193 (PNP) MJW21194 (NPN)
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 Ω
DUT
0.5 Ω
0.5 Ω
DUT
−50 V
Figure 18. Total Harmonic Distortion Test Circuit
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6
8.0 Ω
MJW21193 (PNP) MJW21194 (NPN)
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−T−
C
−B−
E
U
L
N
4
A
−Q−
1
2
0.63 (0.025)
3
P
−Y−
K
W
J
F 2 PL
D 3 PL
0.25 (0.010)
M
Y Q
T B
M
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
2.20
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
20.06
20.83
5.40
6.20
4.32
5.49
−−−
4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
H
G
M
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
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7
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.087
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.790
0.820
0.212
0.244
0.170
0.216
−−− 0.177
0.140
0.144
0.242 BSC
0.113
0.123
MJW21193 (PNP) MJW21194 (NPN)
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