INCHANGE Semiconductor MJB44H11 isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·Pb-free package are available ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse 20 A PC Total Power Dissipation @ Ta=25℃ 2 W PC Total Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor MJB44H11 isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 400mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC=8A; IB= 800mA 1.5 V ICEO Collector Cutoff Current VCE= 80V; IE= 0 10 uA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 uA hFE1 DC Current Gain IC= 2A; VCE= 1V 60 hFE2 DC Current Gain IC= 4A; VCE= 1V 40 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 50 MHz Output Capacitance IE=0; VCB= 10V; f= 1.0MHz 130 pF fT COB isc website：www.iscsemi.com 2 80 UNIT V isc & iscsemi is registered trademark INCHANGE Semiconductor isc website：www.iscsemi.com 3 isc & iscsemi is registered trademark