Kexin AO3413-3 P-channel mosfet Datasheet

MOSFET
SMD Type
P-Channel MOSFET
AO3413 (KO3413)
SOT-23-3
Unit: mm
■ Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
● RDS(ON) < 80mΩ (VGS =-4.5V)
1
0.55
● ID =-3 A (VGS =-4.5V)
+0.2
1.6 -0.1
+0.2
2.8 -0.1
● VDS (V) =-20V
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
● RDS(ON) < 100mΩ (VGS =-2.5V)
+0.2
1.1 -0.1
● RDS(ON) < 130mΩ (VGS =-1.8V)
0-0.1
+0.1
0.68 -0.1
1. Gate
D
2. Source
3. Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
ID
IDM
Ta = 25℃
Ta = 70℃
t ≤ 10s
Steady-State
PD
RthJA
RthJL
Unit
V
-3
-2.4
A
-15
1.4
0.9
W
90
125
℃/W
80
Junction Temperature
TJ
150
Junction Storage Temperature Range
Tstg
-55 to 150
℃
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MOSFET
SMD Type
P-Channel MOSFET
AO3413 (KO3413)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
Gate Threshold Voltage
VGS(th)
Test Conditions
Min
Typ
-20
ID=-250μA, VGS=0V
VDS=-20V, VGS=0V
-1
VDS=-20V, VGS=0V, TJ=55℃
-5
VDS=0V, VGS=±8V
-0.4
VDS=VGS ID=-250μA
RDS(On)
VGS=-4.5V, ID=-3A
Forward Transconductance
ID(ON)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
VGS=-2.5V, ID=-2.6A
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-3A
12
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-3A
15
23
11
Turn-Off DelayTime
td(off)
IS
VSD
VGS=-4.5V, VDS=-10V,
RL=3.3Ω, RGEN=6Ω
Marking
AD*
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36
ns
53
56
IF=-3A, dI/dt=100A/μs
IS=-1A,VGS=0V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Ω
nC
1.2
tr
Qrr
pF
8.5
Turn-On Rise Time
Maximum Body-Diode Continuous Current
745
70
7.2
Body Diode Reverse Recovery Charge
S
80
2.1
Diode Forward Voltage
2
A
560
VGS=0V, VDS=-10V, f=1MHz
mΩ
130
Qgd
trr
V
-15
td(on)
Body Diode Reverse Recovery Time
-1
100
Turn-On DelayTime
tf
nA
80
Gate Drain Charge
Turn-Off Fall Time
uA
±100
115
TJ=125℃
VGS=-1.8V, ID=-1A
On state drain current
Unit
V
VGS=-4.5V, ID=-3A
Static Drain-Source On-Resistance
Max
37
49
27
nC
-1.4
A
-1
V
MOSFET
SMD Type
P-Channel MOSFET
AO3413 (KO3413)
■ Typical Characterisitics
25
20
-3.0V
-4.5V
-2.5V
15
15
-ID(A)
-ID (A)
20
-2.0V
10
10
125°C
5
VGS=-1.5V
5
VDS=-5V
25°C
0
0
0
1
2
3
4
0
5
-VDS (Volts)
Figure 1: On-Region Characteristics
Normalized On-Resistance
130
RDS(ON) (mΩ
Ω)
1
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
3
1.6
150
VGS=-1.8V
110
90
VGS=-2.5V
70
VGS=-4.5V
50
VGS=-2.5V
ID=-2.6A
1.4
VGS=-4.5V
ID=-3A
1.2
VGS=-1.8V
ID=-1A
1
0.8
0
2
4
6
8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
180
ID=-3A
160
1E+01
140
1E+00
120
-IS (A)
RDS(ON) (mΩ
Ω)
0.5
125°C
100
80
125°C
1E-01
1E-02
25°C
1E-03
60
25°C
1E-04
40
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
SMD Type
P-Channel MOSFET
AO3413 (KO3413)
■ Typical Characterisitics
5
1200
Capacitance (pF)
4
-VGS (Volts)
1400
VDS=-10V
ID=-3A
3
2
1
1000
800
Ciss
600
400
Coss
200
0
Crss
0
0
2
4
6
8
10
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
1000
RDS(ON)
limited
10µs
1ms
1.00
10ms
0.1s
TJ(Max)=150°C
TA=25°C
0.10
TJ(Max)=150°C
TA=25°C
1
0.1
0.01
0.1
1
-VDS (Volts)
10
0.00001
100
10
1
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient
.
Figure 9: Maximum Forward Biased Safe
Operating Area
Zθ JA Normalized Transient
Thermal Resistance
20
10
1s
DC
15
100
100µs
Power (W)
-ID (Amps)
10.00
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4
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100
1000
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