ONSEMI MC74HC175D

SEMICONDUCTOR TECHNICAL DATA
! " High–Performance Silicon–Gate CMOS
The MC54/74HC175 is identical in pinout to the LS175. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device consists of four D flip–flops with common Reset and Clock
inputs, and separate D inputs. Reset (active–low) is asynchronous and
occurs when a low level is applied to the Reset input. Information at a D input
is transferred to the corresponding Q output on the next positive going edge
of the Clock input.
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity 166 FETs or 41.5 Equivalent Gates
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
16
1
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
16
1
D SUFFIX
SOIC PACKAGE
CASE 751B–05
16
1
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
Ceramic
Plastic
SOIC
LOGIC DIAGRAM
CLOCK
9
D0
4
D1
5
DATA
INPUTS
2
3
7
6
10
11
15
14
D2 12
D3 13
RESET
Q0
Q0
Q1
Q1
Q2
Q2
Q3
Q3
PIN ASSIGNMENT
INVERTING
AND
NONINVERTING
OUTPUTS
RESET
1
16
VCC
Q0
2
15
Q3
Q0
3
14
Q3
D0
4
13
D3
D1
5
12
D2
Q1
6
11
Q2
Q1
7
10
Q2
GND
8
9
1
PIN 16 = VCC
PIN 8 = GND
CLOCK
FUNCTION TABLE
Inputs
10/95
 Motorola, Inc. 1995
1
REV 6
Outputs
Reset
Clock
D
L
H
H
H
X
X
H
L
X
L
Q
Q
L
H
H
L
L
H
No Change
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MC54/74HC175
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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v
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v
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v
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v
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v
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v ÎÎÎÎ
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
2.0
6.0
V
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
42
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
VOH
Vin = VIH or VIL |Iout|
|Iout|
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
Vin = VIH or VIL |Iout|
|Iout|
Iin
ICC
4.0 mA
5.2 mA
4.0 mA
5.2 mA
V
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
MOTOROLA
2
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC54/74HC175
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
85_C
125_C
Unit
fmax
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
4.5
6.0
6.0
30
35
4.8
24
28
4.0
20
24
MHz
tPLH,
tPHL
Maximum Propagation Delay, Clock to Q or Q
(Figures 1 and 4)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tPHL
Maximum Propagation Delay, Reset to Q or Q
(Figures 2 and 4)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
Maximum Input Capacitance
—
10
10
10
pF
Symbol
Cin
Parameter
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Flip–Flop)*
pF
35
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v
v
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* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
VCC
V
– 55 to
25_C
85_C
125_C
Unit
tsu
Minimum Setup Time, Data to Clock
(Figure 3)
2.0
4.5
6.0
100
20
17
125
25
21
150
30
26
ns
th
Minimum Hold Time, Clock to Data
(Figure 3)
2.0
4.5
6.0
3
3
3
3
3
3
3
3
3
ns
Minimum Recovery Time, Reset Inactive to Clock
(Figure 2)
2.0
4.5
6.0
100
20
17
125
25
21
150
30
26
ns
tw
Minimum Pulse Width, Clock
(Figure 1)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
tw
Minimum Pulse Width, Reset
(Figure 2)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
1000
500
400
1000
500
400
1000
500
400
ns
trec
tr, tf
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
High–Speed CMOS Logic Data
DL129 — Rev 6
3
MOTOROLA
MC54/74HC175
SWITCHING WAVEFORMS
tf
CLOCK
tw
tr
VCC
90%
50%
10%
tw
Q or Q
GND
GND
tPHL
1/fmax
90%
50%
10%
tPLH
50%
Q
tPHL
tPLH
Q
tTLH
VCC
50%
RESET
50%
trec
tTHL
VCC
CLOCK
Figure 1.
50%
GND
Figure 2.
VALID
VCC
DATA
GND
tsu
th
VCC
CLOCK
50%
GND
Figure 3.
TEST CIRCUIT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
* Includes all probe and jig capacitance
Figure 4.
MOTOROLA
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC175
EXPANDED LOGIC DIAGRAM
D0
4
D
Q
2
Q0
3
Q0
7
Q1
6
Q1
10
Q2
11
Q2
15
Q3
14
Q3
C
CLOCK
D1
9
5
C
R
D
Q
C
C
D2
12
R
D
Q
C
C
D3
13
R
D
Q
C
C
RESET
R
1
High–Speed CMOS Logic Data
DL129 — Rev 6
5
MOTOROLA
MC54/74HC175
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
–A
–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE
THE LEAD ENTERS THE CERAMIC BODY.
–B
–
L
C
DIM
A
B
C
D
E
F
G
J
K
L
M
N
–T
K
N
SEATING
–
PLANE
E
M
F
J 16 PL
0.25 (0.010)
G
D 16 PL
0.25 (0.010)
T A
M
9
1
8
T B
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
–A
–
16
M
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T
–
SEATING
PLANE
K
H
D 16 PL
0.25 (0.010)
M
M
J
G
T A
M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A
–
16
1
P 8 PL
0.25 (0.010)
8
M
B
M
G
K
F
R X 45°
C
–T
SEATING
–
PLANE
MOTOROLA
J
M
D 16 PL
0.25 (0.010)
M
T
B
S
A
S
6
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.740 0.770 18.80 19.55
6.35
0.250 0.270
6.85
3.69
0.145 0.175
4.44
0.39
0.015 0.021
0.53
1.02
0.040 0.070
1.77
0.100 BSC
2.54 BSC
0.050 BSC
1.27 BSC
0.21
0.008 0.015
0.38
2.80
0.110 0.130
3.30
7.50
0.295 0.305
7.74
0°
0°
10°
10°
0.020 0.040
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B
–
MILLIMETERS
MIN
MAX
19.05 19.93
6.10
7.49
—
5.08
0.39
0.50
1.27 BSC
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
15°
0°
1.01
0.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
S
S
INCHES
MIN
MAX
0.750 0.785
0.240 0.295
—
0.200
0.015 0.020
0.050 BSC
0.055 0.065
0.100 BSC
0.008 0.015
0.125 0.170
0.300 BSC
15°
0°
0.020 0.040
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80 10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0°
7°
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386 0.393
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0°
7°
0.229 0.244
0.010 0.019
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC175
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High–Speed CMOS Logic Data
DL129 — Rev 6
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