IXYS IXFN44N100P Polar power mosfet hiperfet Datasheet

IXFN44N100P
PolarTM Power MOSFET
HiPerFETTM
VDSS
ID25
=
=
≤
≤
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
37
A
IDM
TC = 25°C, pulse width limited by TJM
110
A
IAR
TC = 25°C
22
A
EAS
TC = 25°C
2
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
890
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
z
2500
3000
V~
V~
z
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z
30
g
TJ
TL
1.6mm (0.062 in.) from case for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Weight
1000V
37A
Ω
220mΩ
300ns
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z
z
z
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
z
z
Easy to mount
Space savings
High power density
V
Applications
6.5
V
± 200
nA
z
TJ = 125°C
VGS = 10V, ID = 22A, Note 1
© 2008 IXYS CORPORATION, All rights reserved
50 μA
3 mA
220 mΩ
z
z
z
z
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
DS99879A(4/08)
IXFN44N100P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 22A, Note 1
RGi
20
35
S
Gate input resistance
1.70
Ω
19
nF
VGS = 0V, VDS = 25V, f = 1MHz
1060
pF
41
pF
Ciss
Coss
SOT-227B Outline
Crss
td(on)
Resistive Switching Times
60
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A
68
ns
td(off)
RG = 1Ω (External)
90
ns
54
ns
305
nC
104
nC
125
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A
Qgd
RthJC
0.14
RthCS
0.05
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
°C/W
°C/W
Characteristic Values
Min.
Typ.
Max.
44
A
Repetitive, pulse width limited by TJM
176
A
IF = IS, VGS = 0V, Note 1
1.5
V
300 ns
IF = 22A, -di/dt = 100A/μs
VR = 100V
2.5
μC
17
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN44N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
45
90
VGS = 10V
9V
40
35
70
30
60
8V
ID - Amperes
ID - Amperes
VGS = 10V
9V
80
25
20
15
10
50
40
8V
30
20
7V
5
10
0
7V
0
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
20
25
30
Fig. 4. RDS(on) Normalized to ID = 22A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
45
3.0
VGS = 10V
8V
40
2.8
VGS = 10V
2.6
35
2.4
RDS(on) - Normalized
ID - Amperes
15
VDS - Volts
VDS - Volts
30
25
20
7V
15
2.2
2.0
I D = 44A
1.8
1.6
I D = 22A
1.4
1.2
1.0
10
0.8
5
6V
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 22A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
40
VGS = 10V
2.4
TJ = 125ºC
35
30
2.0
ID - Amperes
RDS(on) - Normalized
2.2
1.8
1.6
TJ = 25ºC
1.4
25
20
15
1.2
10
1.0
5
0.8
0
0
10
20
30
40
50
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
60
70
80
90
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFN44N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
50
60
45
55
TJ = - 40ºC
50
40
45
TJ = 125ºC
25ºC
- 40ºC
30
g f s - Siemens
ID - Amperes
35
25
20
25ºC
40
125ºC
35
30
25
20
15
15
10
10
5
5
0
0
5
5.5
6
6.5
7
7.5
8
8.5
0
9
5
10
15
VGS - Volts
20
25
30
35
40
45
50
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
130
120
VDS = 500V
14
110
I D = 22A
100
I G = 10mA
12
VGS - Volts
IS - Amperes
90
80
70
60
50
TJ = 125ºC
10
8
6
40
30
4
TJ = 25ºC
20
2
10
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
50
100
VSD - Volts
150
200
250
300
350
400
450
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
10,000
Ciss
0.100
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
0.010
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_44N100P(97)4-01-08-D
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