SPANSION MBM29F040C-70PFTR Flash memory 4m (512k x 8) bit Datasheet

TM
SPANSION Flash Memory
Data Sheet
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSION
revisions will occur when appropriate, and changes will be noted in a revision summary.
TM
product. Future routine
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
solutions.
TM
memory
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20842-4E
FLASH MEMORY
CMOS
4M (512K × 8) BIT
MBM29F040C-55/-70/-90
■ FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
Single 5.0 V read, program and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
Compatible with JEDEC-standard byte-wide pinouts
32-pin PLCC (Package suffix: PD)
32-pin TSOP(I) (Package suffix: PF)
32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
Minimum 100,000 write/erase cycles
High performance
55 ns maximum access time
Sector erase architecture
8 equal size sectors of 64K bytes each
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Embedded Erase™ Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program™ Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Low VCC write inhibit ≤ 3.2 V
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.
MBM29F040C-55/-70/-90
■ PACKAGE
32-pin Plastic QFJ (PLCC)
Marking Side
(LCC-32P-M02)
32-pin Plastic TSOP (I)
32-pin Plastic TSOP (I)
Marking Side
Marking Side
(FPT-32P-M24 — Assembly: Malaysia)
2
(FPT-32P-M25 — Assembly: Malaysia)
MBM29F040C-55/-70/-90
■ GENERAL DESCRIPTION
The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The
MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be
programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F040C offers access times 55 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F040C is pin and command set compatible with JEDEC standard E2PROMs. Commands are written
to the command register using standard microprocessor write timings. Register contents serve as input to an
internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
The MBM29F040C is programmed by executing the program command sequence. This will invoke the Embedded
Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is
accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which
is an internal algorithm that automatically preprograms the array if it is not already programmed before executing
the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell
margin.
Any individual sector is typically erased and verified in 1 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows for 64K byte sectors of memory
to be erased and reprogrammed without affecting other sectors. The MBM29F040C is erased when shipped
from the factory.
The device features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7
or by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the device
internally resets to the read mode.
Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels
of quality, reliability and cost effectiveness. The MBM29F040C memory electrically erases the entire chip or all
bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot electron injection.
3
MBM29F040C-55/-70/-90
■ FLEXIBLE SECTOR-ERASE ARCHITECTURE
• 64K Byte per sector
• Individual-sector, multiple-sector, or bulk-erase
capability
• Individual or multiple-sector protection is user
definable
7FFFFH
6FFFFH
5FFFFH
64K byte per sector
4FFFFH
3FFFFH
2FFFFH
1FFFFH
0FFFFH
00000H
4
MBM29F040C-55/-70/-90
■ PRODUCT LINE UP
Part No.
MBM29F040C
VCC = 5.0 V ±5%
-55
—
—
VCC = 5.0 V ±10%
—
-70
-90
Max. Address Access Time (ns)
55
70
90
Max. CE Access Time (ns)
55
70
90
Max. OE Access Time (ns)
30
30
35
Ordering Part No.
■ BLOCK DIAGRAM
DQ0 to DQ7
VCC
Erase Voltage
Generator
VSS
Input/Output
Buffers
WE
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
CE
STB
Data Latch
OE
STB
Low VCC Detector
Timer for
Program/Erase
Address
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A 0 to A 18
5
MBM29F040C-55/-70/-90
■ CONNECTION DIAGRAMS
A12
A15
A16
A18
V CC
WE
A17
PLCC
4
3
2
1
32
31
30
A13
A5
7
27
A8
A4
8
26
A9
A3
9
25
A11
A2
10
24
OE
A1
11
23
A10
A0
12
22
CE
DQ0
13
21
DQ7
14
15
16
17
18
19
20
DQ6
28
DQ 5
6
DQ 4
A6
DQ3
A14
VSS
29
DQ 2
5
DQ1
A7
LCC-32P-M02
TSOP (I)
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Marking Side
MBM29F040C
Standard Pinout
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
V SS
DQ2
DQ1
DQ0
A0
A1
A2
A3
FPT-32P-M24
A4
A5
A6
A7
A12
A15
A16
A18
VCC
WE
A17
A14
A13
A8
A9
A11
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Marking Side
MBM29F040C
Reverse Pinout
FPT-32P-M25
6
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
CE
A10
OE
MBM29F040C-55/-70/-90
■ LOGIC SYMBOL
Table 1
Pin
Function
A0 to A18
Address Inputs
DQ0 to DQ7
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
VSS
Device Ground
VCC
Device Power Supply
19
A0 to A18
8
MBM29F040C Pin Configuration
DQ0 to DQ7
CE
OE
WE
Table 2
MBM29F040C User Bus Operations
CE
OE
WE
A0
A1
A6
A9
I/O
Auto-Select Manufacturer Code (1)
L
L
H
L
L
L
VID
Code
Auto-Select Device Code (1)
L
L
H
H
L
L
VID
Code
Read (3)
L
L
H
A0
A1
A6
A9
DOUT
Standby
H
X
X
X
X
X
X
HIGH-Z
Output Disable
L
H
H
X
X
X
X
HIGH-Z
Write (Program/Erase)
L
H
L
A0
A1
A6
A9
DIN
Enable Sector Protection (2)
L
VID
X
X
X
VID
X
Verify Sector Protection (2)
L
L
L
H
L
VID
Code
Operation
Legend: L = VIL, H = VIH, X = VIL or VIH,
H
= Pulse Input. See DC Characteristics for voltage levels.
Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See
Table 5.
2. Refer to the section on Sector Protection.
3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
7
MBM29F040C-55/-70/-90
■ ORDERING INFORMATION
Standard Products
Fujitsu standard products are available in several packages. The order number is formed by a combination of:
MBM29F040
C
-55
PD
PACKAGE TYPE
PD =32-Pin Rectangular Plastic Leaded Chip
Carrier (PLCC)
PFTN = 32-Pin Thin Small Outline Package
(TSOP) Standard Pinout
PFTR =32-Pin Thin Small Outline Package
(TSOP) Reverse Pinout
SPEED OPTION
See Product Selector Guide
C = Device Revision
DEVICE NUMBER/DESCRIPTION
MBM29F040
4Mega-bit (512K × 8-Bit) CMOS Flash Memory
5.0 V-only Read, Program, and Erase
64K Byte Sectors
8
MBM29F040C-55/-70/-90
■ FUNCTIONAL DESCRIPTION
Read Mode
The MBM29F040C has two control functions which must be satisfied in order to obtain data at the outputs. CE
is the power control and should be used for a device selection. OE is the output control and should be used to
gate data to the output pins if a device is selected.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time is the delay from the falling edge of OE to valid data at the output pins (assuming the
addresses have been stable for at least tACC-tOE time).
Standby Mode
The MBM29F040C has two standby modes, a CMOS standby mode (CE input held at VCC ±0.3 V.), when the
current consumed is less than 5 µA; and a TTL standby mode (CE is held at VIH) when the current required is
reduced to approximately 1 mA. During Embedded Algorithm operation, VCC Active current (ICC2) is required even
CE = VIH. The device can be read with standard access time (tCE) from either of these standby modes. In the
standby mode the outputs are in a high impedance state, independent of the OE input.
If the device is deselected during erasure or programming, the device will draw active current until the operation
is completed.
Output Disable
With the OE input at a logic high level (VIH), output from the device is disabled. This will cause the output pins
to be in a high impedance state.
Autoselect
The autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the device to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the device.
To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two
identifier bytes may then be sequenced from the device outputs by toggling address A0 from VIL to VIH. All
addresses are DON’T CARES except A0, A1, and A6. (Recommend VIL for the other pins.)
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29F040C is erased or programmed in a system without access to high voltage on the A9 pin. The command
sequence is illustrated in Table 5. (Refer to Autoselect Command section.)
Byte 0 (A0 = VIL) represents the manufacture’s code (Fujitsu = 04H) and byte 1 (A0 = VIH) represents the device
identifier code (MBM29F040C = A4H). These two bytes are given in the Table 3. All identifiers for manufactures
and device will exhibit odd parity with the MSB (DQ7) defined as the parity bit. In order to read the proper device
codes when executing the autoselect, A1 must be VIL. (See Table 3.)
9
MBM29F040C-55/-70/-90
Table 3
MBM29F040C Sector Protection Verify Autoselect Codes
Code
(HEX) DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
A18
A17
A16
A6
A1
A0
Manufacture’s
Code
X
X
X
VIL
VIL
VIL
04H
0
0
0
0
0
1
0
0
Device Code
X
X
X
VIL
VIL
VIH
A4H
1
0
1
0
0
1
0
0
VIL
VIH
VIL
01H*
0
0
0
0
0
0
0
1
Type
Sector
Protection
Sector
Addresses
* : Outputs 01H at protected sector addresses and 00H at unprotected sector addresses.
Table 4
Sector Address Tables
Sector Address
A18
A17
A16
Address Range
SA0
0
0
0
00000H to 0FFFFH
SA1
0
0
1
10000H to 1FFFFH
SA2
0
1
0
20000H to 2FFFFH
SA3
0
1
1
30000H to 3FFFFH
SA4
1
0
0
40000H to 4FFFFH
SA5
1
0
1
50000H to 5FFFFH
SA6
1
1
0
60000H to 6FFFFH
SA7
1
1
1
70000H to 7FFFFH
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The
command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on
the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Protection
The MBM29F040C features hardware sector protection. This feature will disable both program and erase
operations in any number of sectors (0 through 8). The sector protection feature is enabled using programming
equipment at the user’s site. The device is shipped with all sectors unprotected.
To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest
VID = 11.5 V) and CE = VIH. The sector addresses (A18, A17 and A16) should be set to the sector to be protected.
Table 4 defines the sector address for each of the eight (8) individual sectors. Programming of the protection
circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector
addresses must be held constant during the WE pulse. See figures 11 and 17 sector protection waveforms and
algorithm.
10
MBM29F040C-55/-70/-90
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A16, A17 and A18) while (A6, A1, A0) = (0,
1, 0) will produce a logical “1” code at device output DQ0 for a protected sector. Otherwise the device will read
00H for unprotected sector. In this mode, the lower order addresses, except for A0, A1 and A6 are DON’T CARES.
Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes.
It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where the higher order addresses (A16, A17 and A18) are the
sector address will produce a logical “1” at DQ0 for a protected sector. See Table 3 for Autoselect codes.
Table 5
Command
Sequence
Read/Reset
Bus
Write
Cycles
Req'd
MBM29F040C Command Definitions
Bus
Fifth Bus
Sixth Bus
First Bus Second Bus Third Bus Fourth
Read/Write
Write
Cycle
Write
Cycle
Write Cycle Write Cycle Write Cycle
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset*
1
XXXH F0H
—
—
—
—
—
—
—
—
—
—
Read/Reset*
4
555H AAH
2AAH
55H
555H
F0H
RA
RD
—
—
—
—
Autoselect
3
555H AAH
2AAH
55H
555H
90H
—
—
—
—
—
—
Byte Program
4
555H AAH
2AAH
55H
555H
A0H
PA
PD
—
—
—
—
Chip Erase
6
555H AAH
2AAH
55H
555H
80H
555H AAH
2AAH
55H
555H
10H
Sector Erase
6
555H AAH
2AAH
55H
555H
80H
555H AAH
2AAH
55H
SA
30H
Sector Erase Suspend
Erase can be suspended during sector erase with Addr (“H” or “L”). Data (B0H)
Sector Erase Resume
Erase can be resumed after suspend with Addr (“H” or “L”). Data (30H)
Notes: 1. Address bits A11 to A18 = X = “H” or “L” for all address commands except for Program Address (PA) and
Sector Address (SA).
2. Bus operations are defined in Table 2.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the
WE pulse.
SA = Address of the sector to be erased. The combination of A18, A17, and A16 will uniquely select any
sector.
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the falling edge of WE.
*: Either of the two reset commands will reset the device.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the device to read
mode. Table 5 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase
Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover, both Read/
Reset Commands are functionally equivalent, resetting the device to the read mode.
11
MBM29F040C-55/-70/-90
Read/Reset Command
The read or reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the
command register contents are altered.
The device will automatically power-up in the read/reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the device resides in the target system. PROM
programmers typically access the signature codes by raising A9 to a high voltage (VID = 11.5 V to 12.5). However,
multiplexing high voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read
cycle from address XX01H returns the device code A4H. (see Table 3.) All manufacturer and device codes will
exhibit odd parity with the MSB (DQ7) defined as the parity bit.
Sector state (protection or unprotection) will be informed address XX02H.
Scanning the sector addresses (A16, A17, A18) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device
output DQ0 for a protected sector. The programming verification should be perform margin mode on the protected
sector. (See Table 2 and 3.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
sequence.
Byte Programming
The device is programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are two
“unlock” write cycles. These are followed by the program setup command and data write cycles. Addresses are
latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of
CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming.
Upon executing the Embedded Program Algorithm command sequence, the system is not required to provide
further controls or timings. The device will automatically provide adequate internally generated program pulses
and verify the programmed cell margin.
The automatic programming operation is completed when the data on DQ7 is equivalent to data written to this
bit (See Write Operation Status section.) at which time the device returns to the read mode and addresses are
no longer latched. (See Table 6, Hardware Sequence Flags.) Therefore, the device requires that a valid address
to the device be supplied by the system at this particular instance of time. Hence, Data Polling must be performed
at the memory location which is being programmed.
Any commands written to the chip during this period will be ignored.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device (Exceed timing limits.), or result
in an apparent success according to the data polling algorithm but a read from reset/read mode will show that
the data is still “0”. Only erase operations can convert “0”s to “1”s.
Figure 13 illustrates the Embedded ProgramTM Algorithm using typical command strings and bus operations.
12
MBM29F040C-55/-70/-90
Chip Erase
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm command sequence the device will automatically program and verify the entire memory for an all zero
data pattern prior to electrical erase. The system is not required to provide any controls or timings during these
operations.
The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates
when the data on DQ7 is “1” (see Write Operation Status section.) at which time the device returns to read the
mode.
Figure 14 illustrates the Embedded Erase Algorithm using typical command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (Any address location within the desired sector.) is latched on the falling edge of WE, while the command
(Data = 30H) is latched on the rising edge of WE. A time-out of 50 µs from the rising edge of the last sector
erase command will initiate the sector erase command(s).
Multiple sectors may be erased concurrently by writing the six bus cycle operations as described above. This
sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be
concurrently erased. The time between writes must be less than 50 µs, otherwise that command will not be
accepted. It is recommended that processor interrupts be disabled during this time to guarantee this condition.
The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 50 µs from the
rising edge of the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of
the WE occurs within the 50 µs time-out window the timer is reset. (Monitor DQ3 to determine if the sector erase
timer window is still open, see section DQ3, Sector Erase Timer.) Any command other than Sector Erase or
Erase Suspend during this time-out period will reset the device to read mode, ignoring the previous command
string. Resetting the device once execution has begun will corrupt the data in the sector. In that case, restart
the erase on those sectors and allow them to complete. (Refer to the Write Operation Status section for Sector
Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with any number of
sectors (1 to 7).
Sector erase does not require the user to program the device prior to erase. The device automatically programs
all memory locations in the sector(s) to be erased prior to electrical erase. When erasing a sector or sectors the
remaining unselected sectors are not affected. The system is not required to provide any controls or timings
during these operations.
The automatic sector erase begins after the 50 µs time out from the rising edge of the WE pulse for the last
sector erase command pulse and terminates when the data on DQ7 is “1” (See Write Operation Status section.)
at which time the device returns to read mode. During the execution of the Sector Erase command, only the
Erase Suspend and Erase Resume commands are allowed. All other commands will reset the device to read
mode. Data polling must be performed at an address within any of the sectors being erased.
Figure 14 illustrates the Embedded EraseTM Algorithm using typical command strings and bus operations.
13
MBM29F040C-55/-70/-90
Erase Suspend
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads
from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase
operation which include the time-out period for sector erase. The Erase Suspend command will be ignored if
written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command
during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the
erase operation.
Any other command written during the Erase Suspend mode will be ignored except the Erase Resume command.
Writing the Erase Resume command resumes the erase operation. The addresses are “DON’T CARES” when
writing the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of 10 µs to suspend the erase operation. When the devices have entered the erase-suspended mode, the DQ7
bit will be at logic “1”, and DQ6 will stop toggling. The user must use the address of the erasing sector for reading
DQ6 and DQ7 to determine if the erase operation has been suspended. Further writes of the Erase Suspend
command are ignored.
When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ2 to toggle. (See the section on DQ2.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Program. This Program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erasesuspended Program operation is detected by Data polling of DQ7, or by the Toggle Bit I (DQ6) which is the same
as the regular Program operation. Note that DQ7 must be read from the Program address while DQ6 can be read
from any address.
To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
14
MBM29F040C-55/-70/-90
Write Operation Status
Table 6
Hardware Sequence Flags
Status
Embedded Program Algorithm
Embedded Erase Algorithm
In Progress
Erase Suspend Read
(Erase Suspended Sector)
Erase
Erase Suspend Read
Suspended
(Non-Erase Suspended Sector)
Mode
Erase Suspend Program
Non-Erase Suspended Sector)
Embedded Program Algorithm
Program/Erase in Embedded Erase Algorithm
Exceeded
Time Limits Erase
Erase Suspend Program
Suspended
(Non-Erase Suspended Sector)
Mode
DQ7
DQ6
DQ5
DQ3
DQ2
DQ7
Toggle
0
0
1
0
Toggle
0
1
Toggle
1
1
0
0
Toggle
Data
Data
Data
Data
Data
DQ7
Toggle
(Note 1)
0
0
1
(Note 2)
DQ7
Toggle
1
0
1
0
Toggle
1
1
N/A
DQ7
Toggle
1
0
N/A
Notes: 1. Performing successive read operations from any address will cause DQ6 to toggle.
2. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic
“1” at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle.
3. DQ0 and DQ1 are reserve pins for future use. DQ4 is for Fujitsu internal use only.
DQ7
Data Polling
The MBM29F040C device features Data Polling as a method to indicate to the host that the Embedded Algorithms
are in progress or completed. During the Embedded Program Algorithm an attempt to read the device will produce
the compliment of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt
to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an
attempt to read the device will produce a “0” at the DQ7 output. Upon completion of the Embedded Erase Algorithm
an attempt to read the device will produce a “1” at the DQ7 output. The flowchart for Data Polling (DQ7) is shown
in Figure 15.
For chip erase, and sector erase the Data Polling is valid after the rising edge of the sixth WE pulse in the six
write pulse sequence. For sector erase, the Data Polling is valid after the last rising edge of the sector erase
WE pulse. Data Polling must be performed at sector address within any of the sectors being erased and not a
protected sector. Otherwise, the status may not be valid. Once the Embedded Algorithm operation is close to
being completed, the MBM29F040C data pins (DQ7) may change asynchronously while the output enable (OE)
is asserted low. This means that the device is driving status information on DQ7 at one instant of time and then
that byte’s valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may
read the status or valid data. Even if the device has completed the Embedded Algorithm operation and DQ7 has
a valid data, the data outputs on DQ0 to DQ6 may be still invalid. The valid data on DQ0 to DQ7 will be read on
the successive read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase
Algorithm, or sector erase time-out. (See Table 6.)
See Figure 9 for the Data Polling timing specifications and diagrams.
15
MBM29F040C-55/-70/-90
DQ6
Toggle Bit I
The MBM29F040C also features the “Toggle Bit I” as a method to indicate to the host system that the Embedded
Algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from
the device will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm
cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During
programming, the Toggle Bit I is valid after the rising edge of the fourth WE pulse in the four write pulse sequence.
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth WE pulse in the six
write pulse sequence. The Toggle Bit I is active during the sector time out.
In programming, if the sector being written to is protected, the toggle bit will toggle for about 2 µs and then stop
toggling without the data having changed. In erase, the device will erase all the selected sectors except for the
ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 100 µs
and then drop back into read mode, having changed none of the data.
Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will
cause the DQ6 to toggle.
See Figure 10 for the Toggle Bit timing specifications and diagrams.
DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under
these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase
cycle was not successfully completed. Data Polling DQ7, DQ6 is the only operating function of the device under
this condition. The CE circuit will partially power down the device under these conditions (to approximately 2
mA). The OE and WE pins will control the output disable functions as described in Table 2.
The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this
case the device locks out and never completes the Embedded Algorithm operation. Hence, the system never
reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the device has exceeded timing limits, the
DQ5 bit will indicate a “1.” Please note that this is not a device failure condition since the device was incorrectly
used. If this occurs, reset the device with command sequence.
DQ3
Sector Erase Timer
After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will
remain low until the time-out is complete. Data Polling and Toggle Bit I are valid after the initial sector erase
command sequence.
If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command. DQ3 may
be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled
erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or Toggle Bit I. If DQ3 is low (“0”), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the
second status check, the command may not have been accepted.
Refer to Table 6: Hardware Sequence Flags.
16
MBM29F040C-55/-70/-90
DQ2
Toggle Bit II
This Toggle Bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte
address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit.
DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend
Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized
as follows:
DQ7
DQ6
DQ2
DQ7
toggles
1
Erase
0
toggles
toggles
Erase Suspend Read
(Erase-Suspended Sector)
(Note 1)
1
1
toggles
DQ7 (Note 2)
toggles
1 (Note 2)
Mode
Program
Erase Suspend Program
Notes: 1. These status flags apply when outputs are read from a sector that has been erase-suspended.
2. These status flags apply when outputs are read from the byte address of the non-erase suspended sector.
Data Protection
The MBM29F040C is designed to offer protection against accidental erasure or programming caused by spurious
system level signals that may exist during power transitions. During power up the device automatically resets
the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory
contents only occurs after successful completion of specific multi-bus cycle command sequences.
The device also incorporates several features to prevent inadvertent write cycles resulting form VCC power-up
and power-down transitions or system noise.
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less
than 3.2 V (typically 3.7 V). If VCC < VLKO, the command register is disabled and all internal program/erase circuits
are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored
until the VCC level is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
17
MBM29F040C-55/-70/-90
Power-Up Write Inhibit
Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
18
MBM29F040C-55/-70/-90
■ ABSOLUTE MAXIMUM RATINGS
Storage Temperature .................................................................................... –55°C to +125°C
Ambient Temperature with Power Applied .................................................... –40°C to +85°C
Voltage with Respect to Ground All pins except A9, OE (Note 1).................. –2.0 V to +7.0 V
VCC (Note 1) .................................................................................................. –2.0 V to +7.0 V
A9, OE (Note 2) ............................................................................................. –2.0 V to +13.5 V
Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may negative
overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins is VCC
+0.5 V. During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns.
2. Minimum DC input voltage on A9 and OE pins are –0.5 V. During voltage transitions, A9 and OE pins may
negative overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on A9 and OE
pins are +13.5 V which may overshoot to 14.0 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING RANGES
Ambient Temperature (TA) ................................................................................ –40°C to +85°C
VCC Supply Voltages
MBM29F040C-55.......................................................................................... +4.75 V to +5.25 V
MBM29F040C-70/-90 ................................................................................... +4.50 V to +5.50 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
WARNING: The recommended operating conditions are required in order to ensure normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
19
MBM29F040C-55/-70/-90
■ MAXIMUM OVERSHOOT
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
Figure 1
Maximum Negative Overshoot Waveform
20 ns
VCC+2.0 V
VCC+0.5 V
+2.0 V
20 ns
20 ns
Figure 2
Maximum Positive Overshoot Waveform 1
20 ns
+14.0 V
+13.0 V
VCC+0.5 V
20 ns
20 ns
* : This waveform is applied for A9, OE.
Figure 3
20
Maximum Positive Overshoot Waveform 2
MBM29F040C-55/-70/-90
■ DC CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
ILI
Input Leakage Current
VIN = VSS to VCC, VCC = VCC Max
—
±1.0
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
—
±1.0
µA
ILIT
A9, OE Input Leakage Current
VCC = VCC Max., A9, OE = 12.0 V
—
50
µA
ICC1
VCC Active Current (Note 1)
CE = VIL, OE = VIH
—
30
mA
ICC2
VCC Active Current (Note 2)
CE = VIL, OE = VIH
—
45
mA
VCC = VCC Max., CE = VIH
—
1
mA
ICC3
VCC Current (Standby)
VCC = VCC Max., CE = VCC±0.3 V
—
5
µA
VIL
Input Low Level
—
–0.5
0.8
V
VIH
Input High Level
—
2.0
VCC+0.3
V
VID
Voltage for Autoselect and Sector
VCC = 5.0 V
Protection (A9, OE) (Note 3, 4)
11.5
12.5
V
VOL
Output Low Voltage Level
IOL = 12.0 mA, VCC = VCC Min
—
0.45
V
IOH = –2.5 mA, VCC = VCC Min
2.4
—
V
VCC–0.4
—
V
3.2
4.2
V
VOH1
Output High Voltage Level
VOH2
VLKO
IOH = –100 µA
Low VCC Lock-Out Voltage
—
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component
(at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Applicable to sector protection function.
4. (VID – VCC) do not exceed 9 V.
21
MBM29F040C-55/-70/-90
■ AC CHARACTERISTICS
•
Read Only Operations Characteristics
Parameter
Symbols
JEDEC
Description
Test Setup
Standard
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
Output Enable to Output Delay
tEHQZ
tDF
tGHQZ
tAXQX
—
-55
-70
-90
(Note1) (Note2) (Note2) Unit
Min.
55
70
90
ns
CE = VIL
OE = VIL
Max.
55
70
90
ns
OE = VIL
Max.
55
70
90
ns
—
Max.
30
30
35
ns
Chip Enable to Output HIGH-Z
—
Max.
20
20
20
ns
tDF
Output Enable to Output HIGH-Z
—
Max.
20
20
20
ns
tOH
Output Hold Time From
Addresses,
CE or OE, Whichever Occurs First
—
Min.
0
0
0
ns
Note: 2. Test Conditions:
Oput Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level
Input: 0.8 and 2.0 V
Output: 0.8 and 2.0 V
Note: 1. Test Conditions:
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
5.0 V
IN3064
or Equivalent
2.7 kΩ
Device
Under
Test
6.2 kΩ
CL
Diodes = IN3064
or Equivalent
Note: 1.CL = 30 pF including jig capacitance
2.CL = 100 pF including jig capacitance
Figure 4
22
Test Conditions
MBM29F040C-55/-70/-90
•
Write/Erase/Program Operations
MBM29F040C
Parameter Symbols
Description
JEDEC Standard
-55
-70
-90
Unit
tAVAV
tWC
Write Cycle Time
Min.
55
70
90
ns
tAVWL
tAS
Address Setup Time
Min.
0
0
0
ns
tWLAX
tAH
Address Hold Time
Min.
40
45
45
ns
tDVWH
tDS
Data Setup Time
Min.
25
30
45
ns
tWHDX
tDH
Data Hold Time
Min.
0
0
0
ns
—
tOES
Output Enable Setup Time
Min.
0
0
0
ns
—
tOEH
Output Enable
Hold Time
Read
Min.
0
0
0
ns
Toggle and Data Polling
Min.
10
10
10
ns
tGHWL
tGHWL
Read Recover Time Before Write
Min.
0
0
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min.
0
0
0
ns
tELWL
tCS
CE Setup Time
Min.
0
0
0
ns
tWLEL
tWS
WE Setup Time
Min.
0
0
0
ns
tWHEH
tCH
CE Hold Time
Min.
0
0
0
ns
tEHWH
tWH
WE Hold Time
Min.
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min.
30
35
45
ns
tELEH
tCP
CE Pulse Width
Min.
30
35
45
ns
tWHWL
tWPH
Write Pulse Width High
Min.
20
20
20
ns
tEHEL
tCPH
CE Pulse Width High
Min.
20
20
20
ns
tWHWH1
tWHWH1 Byte Programming Operation
Typ.
8
8
8
µs
tWHWH2
tWHWH2 Sector Erase Operation (Note 1)
Typ.
1
1
1
sec
Max.
8
8
8
sec
—
tVCS
VCC Setup Time
Min.
50
50
50
µs
—
tVLHT
Voltage Transition Time (Notes 2)
Min.
4
4
4
µs
—
tWPP
Write Pulse Width (Note 2)
Min.
100
100
100
µs
—
tOESP
OE Setup Time to WE Active (Note 2)
Min.
4
4
4
µs
—
tCSP
CE Setup Time to WE Active (Note 2)
Min.
4
4
4
µs
—
tEOE
Delay Time from Embedded Output Enable
Max.
30
30
35
ns
Notes: 1. This does not include the preprogramming time.
2. This timing is only for Sector Protect operations.
23
MBM29F040C-55/-70/-90
■ SWITCHING WAVEFORMS
•
Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Must Be
Steady
Will Be
Steady
May
Change
from H to L
Will Be
Changing
from H to L
May
Change
from L to H
Will Be
Changing
from L to H
“H” or “L”
Any Change
Permitted
Changing
State
Unknown
Does Not
Apply
Center Line is
HighImpedance
“Off” State
tRC
Addresses Stable
Addresses
tACC
CE
tOE
tDF
OE
tOEH
WE
tCE
Outputs
High-Z
Figure 5
24
tOH
Output Valid
AC Waveforms for Read Operations
High-Z
MBM29F040C-55/-70/-90
3rd Bus Cycle
Addresses
Data Polling
555H
PA
PA
tAH
tWC
tRC
tAS
CE
tCH
tGHWL
OE
tWP
WE
tCS
tWHWH1
tWPH
tDH
A0H
Data
tDF
tOE
PD
DQ7
DOUT
DOUT
tDS
tOH
5.0V
tCE
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Figure 6
AC Waveforms for Alternate WE Controlled Program Operations
25
MBM29F040C-55/-70/-90
3rd Bus Cycle
Addresses
Data Polling
555H
PA
PA
tAH
tWC
tAS
WE
tWH
tGHEL
OE
tCP
CE
tWS
tWHWH1
tCPH
tDH
Data
A0H
PD
DQ7
DOUT
tDS
5.0V
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Figure 7
26
AC Waveforms for Alternate CE Controlled Program Operations
MBM29F040C-55/-70/-90
tAH
Addresses
555H
2AAH
555H
555H
2AAH
SA*
tAS
CE
tCH
tGHWL
OE
tWP
WE
tCS
tWPH
tDH
Data
tDS
AAH
55H
80H
AAH
55H
10H/30H
V CC
tVCS
* : SA is the sector address for Sector Erase. Addresses = 555H for Chip Erase
Figure 8
AC Waveforms Chip/Sector Erase Operations
27
MBM29F040C-55/-70/-90
tCH
CE
t DF
tOE
OE
tOEH
WE
tCE
*
DQ7
Data
DQ7 =
Valid Data
DQ7
High-Z
tWHWH1 or 2
DQ0 to DQ6
Data
DQ0 to DQ6 = Output Flag
DQ0 to DQ6
Valid Data
High-Z
tEOE
* : DQ7 = Valid Data (The device has completed the Embedded operation.)
Figure 9
AC Waveforms for Data Polling during Embedded Algorithm Operations
CE
tOEH
WE
tOES
OE
*
DQ6
Data
DQ6 = Toggle
DQ6 =
Stop Toggling
DQ6 = Toggle
DQ0 to DQ7
Valid
tOE
* : DQ6 stops toggling (The device has completed the Embedded operation).
Figure 10
28
AC Waveforms for Toggle Bit I during Embedded Algorithm Operations
MBM29F040C-55/-70/-90
A18
A17
A16
SAX
SAY
A0
A1
A2 to A5
A7 to A18
A6
VID
5V
A9
tVLHT
VID
5V
OE
tVLHT
tVLHT
tVLHT
tWPP
WE
tOESP
tCSP
CE
01H
Data
tVCS
tOE
VCC
SAX : Sector Address for initial sector
SAY : Sector Address for next sector
Figure 11
AC Waveforms for Sector Protection Timing Diagram
29
MBM29F040C-55/-70/-90
Enter
Embedded
Erasing
WE
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
DQ6
DQ2
Toggle
DQ2 and DQ6
with OE
Note: DQ2 is read from the erase-suspended sector.
Figure 12
30
DQ2 vs. DQ6
Erase
Erase
Complete
MBM29F040C-55/-70/-90
EMBEDDED ALGORITHMS
Start
Write Program Command
Sequence
(See below)
Data Polling Device
Increment Address
No
Last Address
?
Yes
Programming Completed
Program Command Sequence (Address/Command)
555H/AAH
2AAH/55H
555H/A0H
Program Address/Program Data
Figure 13
Embedded ProgramTM Algorithm
31
MBM29F040C-55/-70/-90
EMBEDDED ALGORITHMS
Start
Write Erase Command
Sequece
(See below)
Data Polling or Toggle Bit
Successfully Completed
Erasure Completed
Chip Erase Command Sequence
(Address/Command):
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/80H
555H/80H
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/10H
Sector Address/30H
Sector Address/30H
Additional sector
erase commands
are optional.
Sector Address/30H
Figure 4
32
Embedded EraseTM Algorithm
MBM29F040C-55/-70/-90
Start
Read Byte
(DQ0 to DQ7)
Addr. = VA
DQ7 = Data
?
Yes
No
No
DQ5 = 1?
VA = Byte address for programming
= Any of the sector addresses within
the sector being erased during
sector erase or multiple sector
erases operation.
= Any of the sector addresses within
the sector not being protected
during sector erase or multiple
sector erases operation.
Yes
Read Byte
(DQ0 to DQ7)
Addr. = VA
DQ7 = Data
?
Yes
No
Fail
Pass
Note: DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Figure 5
Data Polling Algorithm
33
MBM29F040C-55/-70/-90
Start
Read Byte
(DQ0 to DQ7)
Addr. = “H” or “L”
DQ6 = Toggle
?
No
Yes
No
DQ5 = 1?
Yes
Read Byte
(DQ0 to DQ7)
Addr. = “H” or “L”
DQ6 = Toggle
?
No
Yes
Fail
Pass
Note: DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5
changing to “1”.
Figure 6
34
Toggle Bit Algorithm
MBM29F040C-55/-70/-90
Start
Setup Sector Addr.
(A18, A17, A16)
PLSCNT = 1
OE = VID, A9 = VID, CE = VIL
Activate WE Pulse
Time out 100 µs
Increment PLSCNT
WE = VIH, CE = OE = VIL
(A9 should remain VID)
Read from Sector
Addr. = SA, A0 = 0, A1 = 1, A6 = 0
No
PLSCNT = 25?
Yes
Remove VID from A9
Write Reset Command
No
Data = 01H?
Yes
Protect Another Sector ?
Yes
No
Device Failed
Remove VID from A9
Write Reset Command
Sector Protection
Completed
Figure 7
Sector Protection Algorithm
35
MBM29F040C-55/-70/-90
■ ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
—
1
8
sec
Excludes 00H programming
prior to erasure
Byte Programming Time
—
8
150
µs
Excludes system-level
overhead
Chip Programming Time
—
4.2
10
sec
Excludes system-level
overhead
100,000
—
—
cycles
Erase/Program Cycle
■ TSOP(I) PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
CIN
Input Capacitance
VIN = 0
7
8
pF
COUT
Output Capacitance
VOUT = 0
8
10
pF
CIN2
Control Pin Capacitance
VIN = 0
8.5
10
pF
Typ.
Max.
Unit
Note: Test conditions TA = 25°C, f = 1.0 MHz
■ PLCC PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
Input Capacitance
VIN = 0
7
8
pF
COUT
Output Capacitance
VOUT = 0
8
10
pF
CIN2
Control Pin Capacitance
VIN = 0
8.5
10
pF
Note: Test conditions TA = 25°C, f = 1.0 MHz
36
Test Setup
MBM29F040C-55/-70/-90
■ PACKAGE DIMENSIONS
32-pin plastic QFJ(PLCC)
(LCC-32P-M02)
3.40±0.16
(.134±.006)
2.25±0.38
(.089±.015)
0.64(.025)
MIN
12.37±0.13
(.487±.005)
11.43±0.08
(.450±.003)
4
1
32
30
5
7.62(.300)REF
1.27±0.13
(.050±.005)
29
INDEX
13.97±0.08 14.94±0.13
(.550±.003) (.588±.005)
12.95±0.51
(.510±.020)
10.16(.400)
REF
21
13
14
20
R0.95(.037)
TYP
0.66(.026)
TYP
+0.05
0.20 –0.02
+.002
.008 –.001
0.43(.017)
TYP
10.41±0.51
(.410±.020)
C
1994 FUJITSU LIMITED C32021S-2C-4
0.10(.004)
Dimensions in mm(inches)
(Continued)
37
MBM29F040C-55/-70/-90
32-pin plastic TSOP(I)
(FPT-32P-M24)
LEAD No.
1
Details of "A" part
32
0.15(.006)
MAX
0.35(.014)
MAX
INDEX
"A"
16
17
0.15(.006)
0.25(.010)
0.15±0.05
(.006±.002)
20.00±0.20
(.787±.008)
18.40±0.20
(.724±.008)
0.10(.004)
19.00±0.20
(.748±.008)
C
1994 FUJITSU LIMITED F32035S-2C-1
8.00±0.20
(.315±.008)
0.05(.002)MIN
(STAND OFF)
+0.10
+.004
1.10 –0.05 .043 –.002
(Mounting Height)
0.50(.0197)
TYP
0.50±0.10
(.020±.004)
7.50(.295)
REF.
0.20±0.10
(.008±.004)
0.10(.004)
M
Dimensions in mm(inches)
(Continued)
38
MBM29F040C-55/-70/-90
(Continued)
32-pin plastic TSOP(I)
(FPT-32P-M25)
LEAD No.
1
32
Details of "A" part
0.15(.006)
MAX
0.35(.014)
MAX
INDEX
"A"
16
17
0.15(.006)
0.20±0.10
(.008±.004)
0.15±0.05
(.006±.002)
19.00±0.20
(.748±.008)
0.10(.004)
0.50±0.10
(.020±.004)
0.50(.0197)
TYP
7.50(.295)
REF.
0.25(.010)
0.10(.004)
M
0.05(.002)MIN
(STAND OFF)
+0.10
18.40±0.20
(.724±.008)
+.004
1.10 −0.05 .043 −.002
8.00±0.20
(.315±.008)
(Mounting Height)
20.00±0.20
(.787±.008)
C
1997 FUJITSU LIMITED F32036S-2C-2
Dimensions in mm(inches)
39
MBM29F040C-55/-70/-90
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document are
presented as examples of semiconductor device applications, and
are not intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the use
of this information or circuit diagrams.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization by Japanese government will be required for export
of those products from Japan.
F9903
 FUJITSU LIMITED Printed in Japan
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