PHILIPS BC177B Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
*
M3D125
BC177
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
File under Discrete Semiconductors, SC04
1997 Jun 04
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to the case
• General purpose switching and amplification.
DESCRIPTION
3
1
handbook, halfpage
2
PNP transistor in a TO-18; SOT18 metal package.
NPN complement: BC107.
2
3
MAM263
Fig.1
1
Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−45
V
ICM
peak collector current
−
−200
mA
mW
Ptot
total power dissipation
Tamb ≤ 25 °C
−
300
hFE
DC current gain
IC = −2 mA; VCE = −5 V
125
500
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
100
−
1997 Jun 04
2
MHz
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−45
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
−
300
mW
Tamb ≤ 25 °C
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
CONDITIONS
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jun 04
3
VALUE
UNIT
0.5
K/mW
0.2
K/mW
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = −20 V
−
−1
−15
nA
ICBO
collector cut-off current
IE = 0; VCB = −20 V; Tj = 150 °C
−
−
−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
50
nA
hFE
DC current gain
IC = −2 mA; VCE = −5 V
125
140
500
hFE
DC current gain
IC = −2 mA; VCE = −5 V
BC177A
125
180
260
BC177B
240
290
500
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−75
−300
mV
IC = −100 mA; IB = −5 mA
−
−250
−
mV
IC = −10 mA; IB = −0.5 mA
−
−700
−
mV
VBEsat
base-emitter saturation voltage
IC = −100 mA; IB = −5 mA
−
−850
−
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V; note 1
−600
−650
−750
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
4
6
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
10
dB
Note
1. VBE decreases by about −2 mV/K with increasing temperature.
1997 Jun 04
4
−
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
α
j
seating plane
B
w M A M B M
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 Jun 04
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
5
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 04
6
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
NOTES
1997 Jun 04
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/03/pp8
Date of release: 1997 Jun 04
Document order number:
9397 750 02374
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