IXYS IXFC60N20 Hiperfet mosfet isoplus220tm Datasheet

ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
IXFC 60N20
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
60
A
IDM
TC = 25°C, pulse width limited by TJM
240
A
IAR
TC = 25°C
60
A
EAR
EAS
TC = 25°C
TC = 25°C
30
1.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
230
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
3
g
PD
TC = 25°C
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
Test Conditions
VDSS
V GS = 0 V, ID = 250 µA
VGS(th)
V DS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
V DS = VDSS
VGS = 0 V
RDS(on)
V GS = 10 V, ID = IT
Notes 1, 2
© 2001 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
2
V
4
±100
TJ = 25°C
TJ = 125°C
V
nA
25 µA
1 mA
33 mΩ
VDSS
ID25
RDS(on)
trr
= 200
= 60
= 33
≤ 250
V
A
Ω
mΩ
ns
ISOPLUS 220TM
G
D
S
G = Gate,
S = Source
Isolated back surface*
D = Drain,
* Patent pending
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<35pF)
l
Low RDS (on)
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsicRectifier
Applications
l
DC-DC converters
l
Batterychargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly: no screws or isolation
foils required
l
Space savings
l
High power density
l
Low collector capacitance to ground
(low EMI)
98843 (6/01)
IXFC 60N20
Symbol
Test Conditions
gfs
V DS = 10 V; ID = IT Notes 1, 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
30
Ciss
Coss
40
S
5200
pF
880
pF
260
pF
V GS = 0 V, VDS = 25 V, f = 1 MHz
Crss
38
ns
tr
V GS = 10 V, VDS = 0.5 VDSS,
63
ns
td(off)
ID = 0.5 ID25, RG = 2.5 Ω (External)
85
ns
26
ns
td(on)
tf
155
nC
Qgs
V GS = 10 V, VDS = 0.5 VDSS, ID = IT
38
nC
Qgd
Notes 2
55
nC
Qg(on)
0.90
RthJC
Source-Drain Diode
Test Conditions
IS
V GS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Note 1
t rr
IRM
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
QRM
K/W
0.30
RthCK
IF = 25A
-di/dt = 100 A/µs,
VR = 50 V
ISOPLUS220 OUTLINE
60
A
240
A
1.5
V
250
ns
0.7
µC
8
A
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT = 30A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
Similar pages