isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK456-800A/B DESCRIPTION ·High speed switching APPLICATIONS ·use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Ptot Tj Tstg Drain Current-continuou s@ TC=37℃ BUK456-800A 4 BUK456-800B 3.5 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUK456-800A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 800 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VSD Diode Forward Voltage isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT V 4 BUK456-800A 3 BUK456-800B 4 V Ω ±100 nA VDS= 800V;VGS= 0 20 uA IF= 4A;VGS= 0 1.3 V 2 isc & iscsemi is registered trademark www.fineprint.cn