Filtronic FPDA200V High performance phemt with source via Datasheet

FPDA200V
Preliminary Data Sheet
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
•
FEATURES
♦ 21 dBm Output Power at 1-dB
Compression at 18 GHz
♦ 12.5 dB Power Gain at 18 GHz
♦ 55% Power-Added Efficiency
♦ Source Vias to Backside Metallization
GATE
BOND
PAD
DRAIN
BOND
PAD
DIE SIZE: 15.6X13.2 mils (395x335 µm)
DIE THICKNESS: 3.9 mils (100 µm)
BONDING PADS: 3.1X3.1 mils (80x80 µm)
•
DESCRIPTION AND APPLICATIONS
The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for high dynamic range.
Typical applications include high dynamic range driver stages for commercial applications including
wireless infrastructure systems, broad bandwidth amplifiers, and optical systems.
Source vias have been added for improved performance and assembly convenience. Each via hole
has 0.02 nH of inductance. Additionally, the via holes remove the need for source bond wires,
meaning only two bond wires are required for assembly. Because the via connects the source pad to
the backside metallization, self-bias configurations should be designed with caution.
•
ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
40
60
85
mA
Power at 1-dB Compression
P-1dB
VDS = 5 V; IDS = 50% IDSS
19
21
dBm
Power Gain at 1-dB Compression
G-1dB
VDS = 5 V; IDS = 50% IDSS
11
12.5
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS
55
%
Maximum Drain-Source Current
IMAX
VDS = 2 V; VGS = 1 V
125
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
70
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 1 mA
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD|
Thermal Resistivity
ΘJC
50
1
10
µA
-0.25
-0.8
-1.5
V
IGS = 1 mA
6
7
V
IGD = 1 mA
8
9
V
260
°C/W
frequency=18 GHz
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 2/25/02
Email: [email protected]
Preliminary Data Sheet
FPDA200V
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
•
ABSOLUTE MAXIMUM RATINGS
Notes:
•
•
•
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Min
Max
Units
TAmbient = 22 ± 3 °C
8
V
VGS
TAmbient = 22 ± 3 °C
-3
V
Drain-Source Current
IDS
TAmbient = 22 ± 3 °C
2xIDSS
mA
Gate Current
IG
TAmbient = 22 ± 3 °C
10
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
100
mW
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
175
ºC
Storage Temperature
TSTG
—
175
ºC
Total Power Dissipation
PTOT
TAmbient = 22 ± 3 °C
550
mW
-65
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT= 550mW – (3.7mW/°C) x THS
where THS = heatsink or ambient temperature.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm)
gold wire. Stage temperature should be 250-260°C.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 2/25/02
Email: [email protected]
Preliminary Data Sheet
FPDA200V
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
Units in microns
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 2/25/02
Email: [email protected]
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